Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 496-498
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The influence of ion implantation in the thermal properties of silicon wafers at room temperature is investigated using the photoacoustic technique. It is suggested that the observed decrease of the values of both thermal diffusivity and conductivity, as the implantation dose increases, is due to the amorphization of the implanted layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104619
Permalink
|
Location |
Call Number |
Expected |
Availability |