ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ir and Pt epitaxial films were grown on (0001), (112¯0), and (011¯2) sapphire by metalorganic chemical vapor deposition using Ir- or Pt-acetylacetonate precursors. The epitaxial growth was achieved at deposition temperatures between 500 and 600 °C with the addition of oxygen to the source vapor. The film orientation and epitaxial relationships between films and substrates were determined by x-ray diffraction, x-ray pole figures, and reflection high energy electron diffraction. Ir films on (112¯0) sapphire grow in [100] orientation. Ir or Pt films on (011¯2) and (0001) sapphire grow in [111] orientation. Ir films on (0001) sapphire contain two in-plane orientations related by a 180° rotation, while Pt films containing only one in-plane orientation can be obtained on (011¯2) and (0001) sapphire.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112108
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