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  • American Institute of Physics (AIP)  (9)
  • 2005-2009
  • 1990-1994  (9)
  • 1985-1989
  • 1930-1934
  • 1994  (9)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1701-1705 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the first Raman-scattering studies of the behavior of the intrasubband plasmon mode of a two-dimensional electron gas which is undergoing lateral drift in an applied electric field. The data clearly show the expected Doppler shifts of the modes traveling up- and downstream, together with the expected dependence on the wave vector, but at higher drift velocities, the expected linear shift is distorted because of electron heating effects.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5249-5256 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for engineering micron and submicron scale structures from magnetic films of transition metals has been developed using a combination of electron- and ion-beam lithography enabling high-quality arrays of submicron magnetic Fe wires to be fabricated. This process can be used to fabricate novel devices from a variety of metal combinations which would not be possible by the usual liftoff metallization method. The structure and magnetic properties are reported of an epitaxial 25 nm Fe(001)/GaAs(001) film and the wire gratings which are fabricated from it. The width of the wires in the grating is 0.5 μm for all structures studied, but the separation of each wire is varied in the range 0.5 to 16 μm. An artificially induced shape anisotropy field of around 1 kG, consistent with a magnetostatic calculation, was observed for all separations studied. The field dependence of the magneto-optic Kerr effect and magnetoresistance (MR) data is consistent with a twisted magnetization configuration across the width of the sample beneath saturation for transverse applied fields. In this case, the detailed form of the field dependence of the MR is strikingly modified from that observed in the continuous film and is consistent with coherent rotation of the magnetization.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5909-5915 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct optical coupling to the plasmon modes of a two-dimensional electron gas in a stratified semiconductor system requires an overlaid grating coupler. Plasmons can be excited with wave vectors equal to integer multiples of the grating wave vector, and the periodic screening by the grating splits these into two modes, symmetric and antisymmetric with respect to the grating profile. We present calculations of the dispersions and optical coupling strengths for several orders of both modes in a typical structure, and show that the splitting and coupling strengths of the higher order modes oscillate with varying grating mark fraction. These effects are discussed in terms of the oscillating field strengths and charge density profiles.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 2645-2652 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linear stability of classical tearing modes in a finite-beta, cylindrical plasma is reconsidered. The different regimes of tearing mode instability are delineated by means of critical Lundquist numbers. The well-known criterion Δ'(approximately-greater-than)Δc due to Glasser, Greene, and Johnson [Phys. Fluids 18, 875 (1975)] defines a critical Lundquist number above which the plasma is stable. However, the physical importance of this Lundquist number is diminished by the fact that there is another critical Lundquist number, which is typically an order of magnitude smaller, above which the mode changes qualitatively in that the growth rate scales linearly with resistivity, and eventually becomes indistinguishable from resistive diffusion. The effect of parallel viscosity, which reduces the stabilizing coupling to the sound wave, is also considered. For large parallel viscosity, it is shown that Δc tends to zero. Thus, the stability criterion Δ'(approximately-greater-than)Δc for a finite-beta plasma is simply replaced by the criterion Δ'(approximately-greater-than)0. These analytical results are shown to be in good agreement with numerical results.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 35 (1994), S. 5000-5020 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The spherical wave expansion is derived for fields of particles of arbitrary spin and mass, and for arbitrary helicity, massless particles (such as the electromagnetic vector potential corresponding to photons). The starting point is Weinberg's characterization of relativistic, higher spin fields that transform according to general irreducible representations of the homogeneous Lorentz group. The expansion is a relativistic generalization of the familiar tensor and spinor spherical harmonics. It is useful for central force problems that arise, for example, in scattering processes off spherically symmetric solitonic backgrounds such as monopoles or skyrmions.
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 35 (1994), S. 6736-6747 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: It is noted that the hypothesis of independent random complex elements for the off diagonal blocks (say, M2 and M3) of the transfer matrix describing conductance in a mesoscopic wire allows the eigenvalue distribution of the matrix product M3°M3 (or M2°M2) to be computed exactly. Exact expressions, in terms of double Wronskian and Toeplitz determinants, are derived for the distribution of the smallest and second smallest eigenvalue of this and similar random matrix products. © 1994 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3291-3292 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Standard silicon on insulator wafers were prepared by separation by implantation of oxygen. The standard implant of 1.8×1018 O+ cm−2 was augmented by an additional implant of 1017 O+ cm−2. The effect of this augmented implantation of oxygen on electron trap density and cross section was investigated using avalanche injection of electrons into the buried oxide. The shift in the high-frequency capacitance-voltage curve was monitored as a function of injected charge. Analysis of the mid-gap voltage shift versus charge shows no change in the effective density of electron traps. There is a factor of 6.8 decrease in the capture cross section for samples that received the supplemental oxygen implantation.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3172-3174 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoresponse signals as fast as 16 ps (full width at half-maximum) have been observed from current-biased bridge structures of epitaxial YBa2Cu3O7−δ thin films on LaAlO3 using 5 ps, 820 nm laser pulses. Operating at liquid-nitrogen temperature (77.4 K), the amplitude of the fast response was found to be linear with current at low bias currents. At higher bias currents, a slow component appeared in the signal with a decay over several nanoseconds which could be attributed to a resistive bolometric response. Fast transients about 20 ps wide have been observed in films with thicknesses ranging from 47 to 200 nm. We believe the fast response is primarily due to a kinetic inductive bolometric mechanism associated with heating of the film by the laser pulse. There is some evidence of a nonbolometric contribution but it is not yet conclusive.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 889-891 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron-LO phonon scattering time in GaAs-Al0.33Ga0.67As quantum wells is determined to be 200±50 fs using transient absorption with low excitation density, a more direct method than previous measurement techniques.
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