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  • American Institute of Physics (AIP)  (2)
  • Wiley-Blackwell  (1)
  • De Gruyter
  • Oxford University Press
  • Springer Science + Business Media
  • 2015-2019
  • 1990-1994  (3)
  • 1994  (3)
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  • 2015-2019
  • 1990-1994  (3)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7266-7286 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of pure, nonhydrogenated amorphous silicon (a-Si) was modified by means of ion implantation, furnace annealing, and pulsed laser annealing. Defects in a-Si were probed by measuring the photocarrier lifetime τ at low carrier densities (1018/cm3) with subpicosecond resolution using pump-probe reflectivity measurements. The average cross section of defect-related midgap states for free-carrier capture is found to be 6×10−16 cm2. In addition, the average bond-angle distortion Δθ in a-Si was derived from Raman spectroscopy. Annealing as-implanted a-Si for 1 h at T≤500 °C induces defect annihilation as well as network relaxation. In contrast, 32 ns pulsed laser heating of a-Si just below the melting threshold leads to relaxation of Δθ without significant defect annihilation. This annealing behavior can be understood on the basis of defect diffusion kinetics. Implanting fully relaxed a-Si with 1 MeV B+, Si+, and Xe+ up to damage levels of 0.004 displacements per atom raises the defect density without affecting Δθ. Only after the defect density has saturated at higher damage levels is Δθ returned to the as-implanted level. The electronic density of states of a-Si is determined using optical-absorption spectroscopy, yielding Nsat≈0.5 at. % for the saturation defect density in a-Si at room temperature. Electron paramagnetic resonance shows that a minor fraction (0.02 at. %) of these defects is spin active. The response of c-Si and relaxed a-Si to implantation damage is comparable, suggesting that the defect populations in both materials are similar. Comparing carrier lifetime measurements and Raman spectroscopy for the various experimental treatments demonstrates that there is no unique correlation between the defect density and Δθ in a-Si. Assuming that defects and Δθ have independent enthalpic contributions, the Gibbs free energy of various structural states of a-Si is calculated. These calculations indicate that the melting temperature of a-Si may vary from 1010 to 1490 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356662
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "The use of magnetohydrodynamic effects to investigate fluid flow in electrically conducting melts'' [Phys. Fluids A 5, 3280 (1993)] (1994)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 6 (1994), S. 2551-2551 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.868450
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence and efficiency of Ce3+ in SrS powders (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 131-136 
    Details
    ISSN: 1057-9257
    Keywords: II-VI compound ; SrS : Ce ; Photoluminescence ; Concentration quenching ; Phosphorescence ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The luminescence efficiency of SrS: Ce powders in the doping range from 0.01 to 1.0 at.% was investigated by photoluminescence decay studies. The radiative decay time of Ce3+ in SrS was determined to be 27 ns. The onset of concentration quenching at concentrations higher than about 0.7 at.% has been obtained. The photoluminescence spectrum of Ce3+ exhibits two emission bands as a consequence of the ground state splitting. The Huang-Rhys factor of the 5d-4f transition was estimated to be about 6. The inhomogeneous broadening of the emission band of samples with higher doping level has been investigated by site-selective and time-resolved spectroscopy.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030119
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