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Electrical properties of polyimide on n-GaAs (100) interfaces by a pulsed laser evaporation technique (1993)

Chaudhari, G. N. ; Rao, V. J.

Springer

Applied physics 56 (1993), S. 353-354

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ISSN: 1432-0630

Keywords: 73.40 ; 81.10 ; 81.15

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Incorporation of a thin insulating layer of polymer-like polyimide deposited by pulsed laser evaporation technique between metal and n-GaAs has resulted in diode structures with MIS and Schottky-barrier-type capacitance-voltage and current-voltage characteristics. These structures have the potential to be useful in improving the performance of GaAs FETs for microwave and high-speed applications.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00324355

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