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  • American Institute of Physics (AIP)  (27)
  • Cambridge University Press
  • 1990-1994  (28)
  • 1985-1989
  • 1960-1964
  • 1993  (28)
  • 1
    Electronic Resource
    Electronic Resource
    Optical probing of intermixing in GaAs-AlGaAs multiquantum wells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2968-2970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that a combination of low-temperature photoluminescence and luminescence excitation spectroscopies together with appropriate modelization can provide the precise information needed for a thorough control of interdiffusion in quantum well structures. A fit of observed and calculated transition energies up to five energy levels, using the interdiffusion length as a unique parameter, is considered. The potentiality of this procedure to fully characterize the interdiffusion process is illustrated by considering the examples of lightly and heavily intermixed GaAs-AlGaAs multiquantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354606
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation and characterization of Cd3P2 thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 214-218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd3P2 thin films have been deposited on glass substrates by electron beam evaporation technique. The amorphous as-deposited films, after annealing in vacuum in the temperature range 180–200 °C, developed the crystallinity. Such polycrystalline films exhibited preferential orientation along the (224 400) direction. The films indicated n-type conductivity with resistivity value around 1.6 Ω cm at room temperature. The composition, ionicity, and Madelung constant, calculated from x-ray photoelectron spectroscopy data, are Cd3P1.7, 0.08, and 1.68, respectively. From the optical (R and T) and modulation (derivative) spectra, the different parameters, namely, refractive index (n∼3.83), band gap (Eg=0.61 eV), band splitting parameters (crystal field ΔCF=0.03 eV, spin-orbit Δ0=0.08 eV) have been obtained. Photoluminescence emission related to band-to-band transition is observed around 0.51 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354148
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of magnetic, magnetomechanical, and electrical properties of the Tb0.27Dy0.73Fe2−xCox system (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1380-1385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray-diffraction studies carried out on Tb0.27Dy0.73Fe2−xCox (x=0,0.5,1.2,2.0) revealed that all compositions investigated retained the C-15 cubic Laves phase structure. Magnetization and electrical resistivity measurements were carried out in the temperature range 77–800 K. Anomalies observed in the resistivity measurements have been identified corresponding to spin reorientation transitions occurring in this system. Some of these transitions have also been observed in the magnetization data. Magnetostriction and magnetomechanical coupling coefficient were measured on samples of x=0, 0.5, and 1.2 prepared by arc melting as well as arc melting followed by zoning using an induction furnace. Magnetostriction and coupling coefficient were found to decrease with increase in cobalt concentration. Magnetostriction data on zoned samples revealed a change in the easy direction of magnetization from [111] to [100] in the case of x=0.5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353258
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  • 4
    Electronic Resource
    Electronic Resource
    Thermally stable, buried high-resistance layers in p-type InP obtained by MeV energy Ti implantation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7238-7243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy Ti+ ions ranging from 1 to 5 MeV were implanted into p-type InP:Zn (for two different zinc concentrations) at both room temperature and 200 °C. The range statistics for Ti implanted at various energies were calculated by analyzing the as-implanted profiles determined by secondary-ion mass spectrometry. Ti did not redistribute during post-implantation annealing except for a slight indiffusion, irrespective of the implant or annealing temperatures used. This behavior is different from the behavior of other implanted transition metals (Fe and Co) in InP, which redistributed highly when the implants were performed at room temperature. In the MeV Ti-implanted InP:Zn the background Zn showed a small degree of redistribution. Rutherford backscattering measurements showed a near virgin lattice perfection for 200 °C implants after annealing. Buried layers with intrinsic resistivity were obtained by MeV Ti implantation in InP:Zn (p=5×1016 cm−3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354011
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  • 5
    Electronic Resource
    Electronic Resource
    MeV energy Fe and Co implants to obtain buried high resistance layers and to compensate donor implant tails in InP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1126-1132 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy Fe and Co implantations were performed into InP:Sn at room temperature and 200 °C in the energy range 0.34–5.0 MeV. Range statistics were calculated for these ions in the above energy range. For the room-temperature implants, implant redistribution peaks around 0.8Rp and Rp+ΔRp, and both in- and out-diffusion of the implant are observed in the secondary-ion-mass-spectroscopy profiles of the annealed samples. The implant redistribution present in the room-temperature implants is much different than in elevated-temperature implants. For buried (high-energy) implants, much of the implant diffusion is eliminated if the implants are performed at 200 °C. For 200 °C implants, the yield of the Rutherford backscattering spectra on the annealed samples is close to that of a virgin sample. The MeV energy Fe and Co implantations at 200 °C are useful to obtain thermally stable, buried, and high-resistance layers of good crystalline quality in n-type InP and for the compensation of the tail of the buried n-type implant. However, due to the low solubility of Fe and Co in InP, the implants of these species are useful only to compensate n-type carriers with concentrations below 1017 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353277
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  • 6
    Electronic Resource
    Electronic Resource
    Structural and magnetic properties of NdFe12−xMoxN1−δ compounds : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6251-6253 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of nitrides NdFe12−xMoxNi1−δ with x=1–2.5 and δ≤0.2 have been investigated. All nitrides are of the ThMn12 tetragonal structure with the unit cell volumes about 3% larger than their parent alloys. Curie temperatures are enhanced by nitrogenation about 160 K and increase linearly with decreasing content x of Mo. NdFe12−xMox exhibits a weak uniaxial anisotropy with a value of BA less than 0.6 T when x≥1.75. After nitrogenation, all nitrides have a strong uniaxial anisotropy. Values of the anisotropy field BA increase monotonically from 6.35 T for x=2.5 up to 9.5 T for x=1 as decreasing content x of Mo. Saturation magnetizations also increase monotonically with decreasing content x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352661
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic properties of sintered Sm2Fe17Ny magnets (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 489-494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sintered magnets of Sm2Fe17Ny nitrides, with a density of 6.0–7.4 g/cm3, have been prepared by using an explosion technique. Both crystalline structure and the magnetic properties of Sm2Fe17Ny nitrides were retained in the process. The sintered magnet had a remanence Br=0.83 T, an intrinsic coercivity μ0iHc=0.57 T and an energy product (BH)max=88 kJ/m3. The temperature dependence of coercivity and remanence were also measured. The temperature coefficients α of remanence and β of coercivity are −0.076%/°C and −0.51%/°C, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355258
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  • 8
    Electronic Resource
    Electronic Resource
    Variational calculations of ground and higher states of metal-oxide-semiconductor inversion layer in a nonuniform electric field (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3385-3389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present variational calculations of the ground and higher-energy states for (100)Si metal-oxide-semiconductor inversion layers in the electric field induced by the gate voltage as represented by a recently proposed logarithmic potential. The ground-state energies are calculated in the electric quantum limit using the well-known Fang–Howard trial wave function. The higher-energy states are obtained using a Gram–Schmidt orthogonalization approach, beginning with trial wave functions that resemble the Laguerre functions. We compare our results with the standard triangular potential approximation involving the Ai(z) Airy function and its roots.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352937
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic ordering in amorphous Bi2O3-ZnO-Fe2O3 films sputtered at high temperatures : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5713-5715 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The onset of a long-range magnetic order is reported in amorphous Bi2O3-ZnO-Fe2O3 films sputtered at high substrate temperatures. Samples of 0.1 Bi2O3-0.4 ZnO-0.5 Fe2O3 were deposited in a mixed oxygen-argon atmosphere at substrate temperatures Ts=450–875 K. Films are found to be x-ray amorphous for Ts≤675 K. For higher Ts values, nonmagnetic crystalline phases are precipitated in the sample. The samples are paramagnetic at room temperature for substrate temperatures below 475 K. A spontaneous magnetic moment is observed in films deposited at higher Ts. The saturation-induction 4πM at 77 K is in the range 800–3600 G and 4πM increases with increase in Ts. The Curie temperature is found to decrease with Ts. A uniaxial anisotropy character in the films is evident from ferromagnetic resonance studies. Thus, data on structural and magnetic parameters indicate the possible presence of ordered clusters in films sputtered at high temperatures. The presence of ordered clusters need to be independently confirmed with techniques such as transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353600
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  • 10
    Electronic Resource
    Electronic Resource
    Properties of ion assisted deposited titania films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 434-438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of titanium dioxide have been deposited using ion assisted deposition with oxygen ions in the energy range 100–500 eV and current densities up to 100 μA/cm2. It has been observed that the refractive index of the films increases up to 300 eV and the extinction coefficient increased only nominally up to 300 eV. Optical band gap calculations have shown a strong dependence of the gap on the energy of incident ions. Beyond a critical energy and current density of the ions the refractive index and extinction coefficient of the films start deteriorating. It has also been found that beyond the critical values the optical band gap value decreases. The maximum refractive index obtained was 2.49 at an energy of 300 eV and 50 μA/cm2 current density. Post-deposition annealing of the films at 500 °C resulted in a slight increase in refractive index without affecting the extinction coefficient. X-ray diffraction studies revealed a monophasic anatase structure in these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353868
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