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  • American Institute of Physics (AIP)  (10)
  • Springer Nature  (6)
  • 2000-2004  (6)
  • 1995-1999
  • 1990-1994  (10)
  • 1970-1974
  • 2002  (6)
  • 1993  (10)
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Verlag/Herausgeber
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  • 2000-2004  (6)
  • 1995-1999
  • 1990-1994  (10)
  • 1970-1974
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Effect of sintering atmosphere on magnetic aftereffect in polycrystalline yttrium iron garnet samples : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6301-6303 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Time effects associated with domain-wall stabilization processes are investigated at temperatures ranging from 80 to 420 K, for yttrium iron garnet polycrystalline samples sintered in different atmospheres. A very different behavior for samples sintered in high and low oxygen partial pressures is found. Above 0.1 atm the isochronal relaxation spectra show a peak around 180 K that could be associated with an electron diffusion controlled domain-wall relaxation. The activation energy for the process is close to 0.4 eV. Below this pressure, the spectra show both positive and negative peaks as a result of the competition between disaccommodation and accommodation processes. These peaks are closely temperature spaced in the neighborhood of 130 K, and the relaxation mechanism responsible for this behavior is not yet clear.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352677
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  • 2
    Digitale Medien
    Digitale Medien
    Polar phonon-intersubband plasmon coupling in Si delta-doped GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1072-1078 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The present work is devoted to Raman scattering by coupled phonon-intersubband plasmon excitations in Si δ-doped GaAs. The signature of the coupled modes is pointed out by means of difference Raman scattering, and their symmetry determined according to the selection rules. A good agreement is found between the experimental spectra and those calculated in the frame of the dielectric response theory. Raman depth profiling measurements have been performed for two locations of the Si-doped sheet with respect to the sample surface. These results give evidence for electron localization in the vicinity of the doped sheet and allow the spatial extent of the electron gas to be estimated. The change undergone by the Raman signal of the coupled phonon-plasmon system is studied as a function of doping level, and the ion spreading effects are discussed. The measurements performed in a wide range of temperature are also presented and analyzed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354954
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  • 3
    Digitale Medien
    Digitale Medien
    Techniques to minimize DX center deleterious effects in III-V device performance (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4988-4997 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The properties of deep donor states (DX centers) in III-V alloys are discussed in relation to their influence on device characteristics and performance. The techniques to avoid or minimize such deleterious effects in AlGaAs-based devices are discussed, along with their physical basis, and some guidelines for improved III-V device design are established. New results about the benefits of proper donor selection, the role of In alloying, the advantage of δ doping in layers and in modulation-doped devices, and the use of AlInAs and InGaP as alternative wide band-gap III-V alloys are presented.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353818
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  • 4
    Digitale Medien
    Digitale Medien
    Critical phenomena in mixtures. II. Synergistic and other effects near mixture critical points (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 5450-5461 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: In this paper we investigate the properties of near-critical mixtures as solvent media, with particular regard to the critical azeotrope. The results from Part I are used in conjunction with integral equation theory calculations to demonstrate that the critical azeotrope has a number of unique properties as a solvent medium. Volumetric and thermal effects related to the solvation of dilute solutes are greatly enhanced and these can be related to higher order divergences of these properties near a critical azeotrope. Finally, we consider synergistic solvent effects near a mixture critical point, showing that solvent mixtures exhibit cooperative behavior that affect solvation thermodynamics in interesting ways that have been little discussed to date.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.465988
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  • 5
    Digitale Medien
    Digitale Medien
    Critical phenomena in mixtures. I. Thermodynamic theory for the binary critical azeotrope (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 5438-5449 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: In this series of papers we provide new results related to critical phenomena in binary mixtures particularly with regard to the phenomenon of critical azeotropy. In Part I we carefully develop a set of necessary and sufficient conditions guaranteeing the existence of critical azeotropy in these mixtures. The sufficiency conditions are particularly useful for determining whether or not a critical azeotrope exists in a system, without having to actually find this point itself, typically a difficult experimental problem. Classical critical exponents of various thermodynamic properties along various paths are determined for the critical azeotrope. These are compared to the analogous situation near a pure fluid critical point in a dilute binary mixture. Both situations display analogies as well as differences that are discussed at some length. In Part II we concentrate upon describing interesting synergistic solvation effects in these systems using many of the results presented in Part I.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.465987
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  • 6
    Digitale Medien
    Digitale Medien
    The dependence of laser-induced refractive index changes in glass on the chemical composition (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 6083-6091 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The properties of permanent, laser induced refractive index gratings in rare-earth doped glasses have been characterized in a variety of materials including lithium borates, lead and magnesium silicates, lead borate-germanates and lead germanates. This work is combined with the previous results obtained on phosphate and silicate glasses to develop an understanding of the effects of glass composition (both network former and modifier ions) on the ability of a material to produce gratings with high scattering efficiencies. The grating efficiencies and the writing/erasing dynamics were studied, and the two-level-system-model developed previously was employed to explain the results. The results show the importance of having flexible glass networks with low polarizing power of the network former ions, and a high content of nonbridging oxygen ions. In addition, it is important to have light, highly polarizable modifier ions with weak chemical bond strengths to the oxygen ions. This type of glass combined with rare-earth ions that like to exist in more than one local coordination environment and that couple strongly to high energy vibrational modes of the host, are found to be very effective in producing local structural changes that lead to room-temperature-stable refractive index gratings.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.464847
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  • 7
    Digitale Medien
    Digitale Medien
    Raman study of electron confinement in Si δ-doped GaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2848-2850 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this letter Raman spectroscopy measurements on Si δ-doped GaAs are reported. The coupling of two-dimensional (2D) intersubband plasmons with the polar phonons is clearly demonstrated. The change undergone by the coupled mode signal as a function of the depth explored by the Raman probe is studied and allows for an original and accurate investigation of electron gas confinement. Indeed, it is shown that a quantitative analysis of depth profiling measurements allows the real-space extent of the quasi-2D electron gas in δ-doped structures to be estimated.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109230
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  • 8
    Digitale Medien
    Digitale Medien
    Molecular beam epitaxial growth and optical characterization of GaAs/AlxGa1−xAs quantum wells on nominally oriented (111)B GaAs substrates (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2691-2693 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Molecular beam epitaxial growth conditions of GaAs/AlxGa1−xAs quantum wells on nominally oriented (111)B GaAs substrates are reported. Photoluminescence measurements of these structures showed linewidths slightly larger than previously reported for quantum wells grown on (100) and misoriented (111)B substrates, but much lower than observed and reported on nominally oriented (111)B substrates. Good surface morphology and optical properties were obtained by monitoring the specular beam intensity of the reflection high-energy electron diffraction diagram during growth. Growth interruption at the interfaces was found to be detrimental for substrate temperatures higher than 610 °C.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110422
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  • 9
    Digitale Medien
    Digitale Medien
    Piezoelectric-induced current asymmetry in [111] InGaAs/InAlAs resonant tunneling diodes for microwave mixing (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 773-775 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This letter predicts a strong nonlinear current density versus voltage (J-V) dependence in InAlAs/InGaAs/InAlAs double barrier resonant tunneling diodes (DBRTDs) with a strained well, grown on [111] InP. The piezoelectric field generates accumulation and depletion regions in both contact layers at zero bias, producing a high asymmetric J-V characteristic while keeping a low device series resistance. Very high cutoff frequency devices, suitable for low-level microwave mixing applications, are then proposed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110777
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  • 10
    Digitale Medien
    Digitale Medien
    Er3+ doping of CaF2 layers grown by molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2616-2618 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Molecular beam epitaxy of CaF2 monocrystalline layers Er3+ doped up to a concentration of 5 wt % is demonstrated on CaF2 substrates. Separated effusion cells containing CaF2 and ErF3 were used. The photoluminescence spectra of the samples show emissions from centers of different symmetry identified by reference to published results obtained on CaF2:Er3+ bulk crystals. No influence of the substrate orientation—(100) or (111)—on the luminescence characteristics was observed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109263
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