ISSN:
1057-9257
Keywords:
Gallium-arsenic compounds
;
Single-source
;
gallium
;
arsenide
;
precursors
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Reactions of GaX3 (X = Br, I) with As(SiMe3)3 in 1:1 and 2:1 mole ratios were investigated. For the latter reactant stoichiometry, substances having the empirical formulae AsBr3Ga2 (1) and Asl3Ga2 (2), the analogues of the previously reported single-source GaAs precursor (AsCl3Ga2)n, were isolated as yellow isolated as yellow insoluble powders. Low-temperature reactions in a 1:1 mole ratio resulted in the isolation of the adducts Br3Ga.As(SiMe3)3 (3) and I3Ga.As(SiMe3)3 (4). On the other hand, at room temperature the GaBr3 reaction resulted in a complex mixture from which no characterizable compounds were isolated, whereas the Gal3 reaction afforded the crystalline compound [I2GaAs(SiMe3)2]2 (5). The structures of 4 and 5 were elucidated by complete single-crystal X-ray analysis (crystal data: 4, monoclinic, space group P21/c, a = 16.497(2) Å, b = 9.629(1) Å, c = 16.658(2) Å, β = 113.21(1)°, V = 2432(1) Å3, Z = 4; 5, orthorhombic, space group Pbca, a = 14.279(2) Å, b = 17.509(2) Å, c = 13.818(2), Å, V = 3455(1) Å3, Z = 4).
Additional Material:
2 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/amo.860010106
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