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  • 1
    Electronic Resource
    Electronic Resource
    Microwave surface resistance of epitaxial YBa2Cu3O7 thin films at 18.7 GHz measured by a dielectric resonator technique (1992)
    Springer
    Journal of superconductivity 5 (1992), S. 195-201 
    Details
    ISSN: 1572-9605
    Keywords: High-temperature superconductivity ; microwave cavities ; sample surface impedance
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We used a dielectric resonator technique for highly sensitive measurements of the temperature dependence of the microwave surface resistanceR s of 1×1 cm2 superconducting films at 18.7 GHz. It consists of a sapphire disc positioned on the film under investigation within a copper cavity which is acting as a radiation shield. In the TE01δ oscillation mode the highly reproducible quality factor of about 105 results in a sensitivity of ±50μΩ forR s measurements. The temperature dependence ofR s can be measured up to values as high as 1 Ω. We have investigated several YBa2Cu3O7 thin films prepared by high oxygen pressure d.c. sputtering on LaAlO3 and NdGaO3. Our best films exhibit a pronounced nonlinear behavior of the d.c. resistivityρ(T) withρ(300K)/ρ(100K) values of about 3.7. Those films show, besides the initial fall-off just belowT c , a further strong decrease ofR s at low temperatures. This was observed both at 18.7 GHz and 87 GHz, as measured by a conventional cavity end plate replacement technique. ForT≪Tc/2 these films exhibit an exp (−αT c/T) dependence ofR s withα-values around 0.4. These observations may be explained by a superconducting energy gap with 2Δ/kT c≈0.8 for charge carriers localized in the CuO chains for YBa2Cu3O7.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618067
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  • 2
    Electronic Resource
    Electronic Resource
    Defects and impurities in amorphous semiconductors and in liquid electrolytes (1992)
    Springer
    Applied physics 54 (1992), S. 40-46 
    Details
    ISSN: 1432-0630
    Keywords: 61.40 ; 71.55 ; 82.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Amorphous (a-) semiconductors like a-Si:H and the chalcogenide glasses possess a general tendency to establish an overall equilibrium between the electronic system and the lattice with its dopant and defect sites. In the present paper the chemical interactions which establish these equilibria within the bulk of the a-semiconductor lattices are compared to chemical interactions in liquid electrolytes, particularly to those in H2O. These considerations reveal close similarities between autocompensation doping in a-semiconductors and acid/base reactions in H2O. The effects of light and field-effect induced defect formation, on the other hand, are shown to be related to the phenomenon of electrolysis in H2O. The consideration of these analogies further emphasizes the roles of charge-carrier localization and that of H-diffusion in promoting dopant and defect equilibration reactions in a-semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348128
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