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  • Springer  (2)
  • International Union of Crystallography (IUCr)
  • Mineralogical Society of Great Britain and Ireland
  • 1995-1999
  • 1990-1994  (2)
  • 1970-1974
  • 1930-1934
  • 1992  (2)
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Verlag/Herausgeber
Erscheinungszeitraum
  • 1995-1999
  • 1990-1994  (2)
  • 1970-1974
  • 1930-1934
Jahr
  • 1
    ISSN: 1572-9605
    Schlagwort(e): High-temperature superconductivity ; microwave cavities ; sample surface impedance
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract We used a dielectric resonator technique for highly sensitive measurements of the temperature dependence of the microwave surface resistanceR s of 1×1 cm2 superconducting films at 18.7 GHz. It consists of a sapphire disc positioned on the film under investigation within a copper cavity which is acting as a radiation shield. In the TE01δ oscillation mode the highly reproducible quality factor of about 105 results in a sensitivity of ±50μΩ forR s measurements. The temperature dependence ofR s can be measured up to values as high as 1 Ω. We have investigated several YBa2Cu3O7 thin films prepared by high oxygen pressure d.c. sputtering on LaAlO3 and NdGaO3. Our best films exhibit a pronounced nonlinear behavior of the d.c. resistivityρ(T) withρ(300K)/ρ(100K) values of about 3.7. Those films show, besides the initial fall-off just belowT c , a further strong decrease ofR s at low temperatures. This was observed both at 18.7 GHz and 87 GHz, as measured by a conventional cavity end plate replacement technique. ForT≪Tc/2 these films exhibit an exp (−αT c/T) dependence ofR s withα-values around 0.4. These observations may be explained by a superconducting energy gap with 2Δ/kT c≈0.8 for charge carriers localized in the CuO chains for YBa2Cu3O7.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 54 (1992), S. 40-46 
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 71.55 ; 82.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Amorphous (a-) semiconductors like a-Si:H and the chalcogenide glasses possess a general tendency to establish an overall equilibrium between the electronic system and the lattice with its dopant and defect sites. In the present paper the chemical interactions which establish these equilibria within the bulk of the a-semiconductor lattices are compared to chemical interactions in liquid electrolytes, particularly to those in H2O. These considerations reveal close similarities between autocompensation doping in a-semiconductors and acid/base reactions in H2O. The effects of light and field-effect induced defect formation, on the other hand, are shown to be related to the phenomenon of electrolysis in H2O. The consideration of these analogies further emphasizes the roles of charge-carrier localization and that of H-diffusion in promoting dopant and defect equilibration reactions in a-semiconductors.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
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