Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 2002-2004
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Germanium was deposited on Si(111) 7×7 by the adsorption and thermal decomposition of diethylgermane [(CH3CH2)2GeH2] (DEG). The DEG reaction products were CH2(large-closed-square)CH2 and H2, which desorbed at 700 and 800 K, respectively, as observed by laser-induced thermal desorption and temperature programmed desorption techniques. The desorption of atomic Ge was also monitored at approximately 1200 K. The production of ethylene was consistent with a β-hydride elimination mechanism for the surface ethyl groups, i.e., Ge—CH2CH3→GeH+CH2(large-closed-square)CH2. The initial sticking coefficient of DEG decreased with increasing surface temperature and a saturation coverage was obtained after exposures of E(approximately-greater-than)700 L at 200 K. This saturation behavior indicates that DEG may be useful for the controlled growth of Ge atomic layers on silicon surfaces.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107124
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