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  • American Institute of Physics (AIP)  (234)
  • American Association for the Advancement of Science  (37)
  • 2020-2022
  • 2000-2004
  • 1990-1994  (271)
  • 1992  (271)
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  • 2020-2022
  • 2000-2004
  • 1990-1994  (271)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2971-2980 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The longitudinal attenuation of impact-generated pulses in ten superconducting dipole magnets was measured at room temperature. A lumped-parameter model was constructed for the collared dipole. Using the method of nonlinear least-squares, the model was used to estimate the internal damping in the main components of the dipoles and the coupling resistances between the components: collars, inner, and outer coils. A positive correlation was found between the collar-inner coil coupling resistance and the 4.2-K performance of the magnets: the higher the coupling resistance, the fewer the number of quenches required to reach design operating current. There was virtually no correlation between any of the other internal or coupling resistances and 4.2-K performance. These observations are explained in terms of frictional slip of the inner coil against the collars causing premature quenches. The magnets are more susceptible to quenches at the collar-inner coil interface than at the collar-outer coil interface because the inner coil is subject to higher fields and forces. The experiment is potentially useful as a technique for screening high-performance superconducting magnets such as Superconducting Super Collider (SSC) dipoles at room temperature.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1846-1852 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A negative charging effect is studied in small, ultrathin metal-oxide-silicon diodes biased at constant voltage. The charging is seen as a gradual decrease in the magnitude of the tunnel current over time. Along with the charging, the current noise power decreases. Results are described from measurements of the temperature and voltage dependence of the current transients. A physical model is presented in which filling and emptying of electron traps in the as-grown oxide cause the noise, and the conductance decrease is caused by the transformation of these traps into fixed negative charge storage centers. From fits of the model to measured data, we obtain a thermal activation energy of 0.3 eV for the charging process. A low-temperature annealing treatment at 200 °C restores the conductance of a previously charged device to its initial value. On the other hand, the charging effect can be eliminated by a 350 °C anneal in nitrogen. Together, these experiments suggest that the traps are water- or hydrogen-related defects.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 2359-2371 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Two semiempirical potentials are used to interpret the vibration–orientation spectrum of the hydrogen chloride–RG* dimers trapped in RG matrices (RG*, RG=Ar, Kr, Xe). The geometries of these dimers are calculated by including matrix relaxation and compared to those observed in the gas phase. It is shown that dimers in matrices can have radial and angular configurations very different from those reported in the gas phase, which have been used to fit potential parameters. The main features of the experimental spectrum of the trapped dimers are satisfactorily interpreted on the basis of one or the other potential. But none can lead to a universal interpretation of the infrared spectra of all the dimers. Arguments are developed on the main causes of discrepancies.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3710-3715 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We discuss the application of time-resolved spectral analysis to interpret the magnetohydrodynamic or Mirnov oscillations in tokamaks. As an example, the technique is applied to analyze the Mirnov oscillations measured in the small tokamak TBR-1 with and without external helical perturbations.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 730-732 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the rate at which positive charge is generated starting near the oxide-silicon interface when electrons are injected from the gate through the very thin oxide layer in metal-oxide-(p)silicon tunnel diodes. By varying the oxide thickness, we find that the charging rate is not strongly controlled by the flux of tunneling electrons over a five order of magnitude range in current density. This implies that if the tunneling electrons do participate, then the charge generation in these oxides is at least a two-step process. A comparison of charge generation in aluminum and polycrystalline silicon gate devices suggests that the process does not involve aluminum-related defects. Measurements of the charging rate versus temperature, T, show that it is weakly dependent on T below 150–200 K and apparently thermally activated above this temperature range.
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After wet chemical oxide removal and fast transfer into ultrahigh vacuum the Si(111)/SiO2 interface structure of wafers from semiconductor-industrial processes (polishing, oxidation, annealing) is investigated with scanning tunneling microscopy (STM): Regular terrace arrays with atomic step height are visible with STM after technological ex situ preparation. The local step structure varies, kinks at step edges occur, and irregular islands are formed with increasing oxide thickness and oxidation rate. The local STM information is compared to macroscopically averaged results provided by electron diffraction (spot-profile analysis of low-energy electron diffraction).
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1095-1097 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multistep wafer-annealed semi-insulating GaAs wafers (MWA) are characterized using photoluminescence (PL). The PL spectra present well-resolved near-band-edge transitions, including the doublet of the neutral acceptor-bound exciton. A detailed investigation using selective pair luminescence of samples submitted to different annealings, i.e., wafer- or ingot-annealing, single or multistep, shows that carbon is the main shallow acceptor. However, for the wafer-annealed samples, two other residual impurities found in the as-grown or ingot-annealed crystals have their estimated concentrations noticeably reduced, for Zn (e.g., around 1013 cm−3 in MWA), or are unresolved for Si. This reduction of background impurities may have direct consequences for device applications.
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  • 8
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 4 (1992), S. 4187-4189 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the Hall effect on stationary convection in shearless current-carrying plasma columns is considered. It is shown that the Hall effect can inhibit the formation of convection cells generated by viscosity and resistivity.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparative study of reactively-ion-sputtered (RIS) and low pressure chemical-vapor-deposited (LPCVD) TiN, and sputter-deposited TaN thin films as diffusion barriers for Cu has been done using Auger electron spectroscopy, Rutherford backscattering spectrometry, x-ray diffraction, scanning electron microscopy, and sheet resistance measurements. For the RIS TiN and sputtered TaN diffusion barriers, the integrity of the individual layers was preserved and there was no evidence of interdiffusion for samples annealed up to 500 °C in N2–H2 ambient for 1 hour. The LPCVD TiN was stable up to 450 °C for 30 minutes only, after which Cu started to diffuse into the TiN layer. The reasons for the higher thermal stability of RIS TiN compared to LPCVD TiN can be deduced from the microstructural differences in the two films, as observed with x-ray diffraction technique.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4232-4239 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An alternative procedure is outlined for the synthesis of high quality, fine grained PbMo6S8. As the grain size plays an important role on the densification process, which in turn has an influence on the magnitude of Jc, an attempt has been made to produce dense samples from such powders by "Hot Pressing.'' The effect of the hot-pressing temperature on the superconducting, crystallographic, microstructural, and grain boundary characteristics of the ternary compound was evaluated. Scanning electron micrographs and ac-susceptibility measurements indicate that hot pressing (1000–1200 °C) improves the grain connection as a consequence of better densification. However, at higher temperatures (1250–1400 °C) it also precipitates MoS2 as an additional phase. Calorimetric data indicate a continuous broadening, as a function of hot-pressing temperature, of the specific heat jump at Tc. Preliminary investigation on the Tc distribution of the samples shows a progressive degradation, as indicated by a smearing in Tc down at least to 8 K. The deterioration was examined using Auger electron spectroscopy and the results suggest possible compositional variations rather than oxygen defects in the phase. The origin of such behavior is examined on the basis of nonstoichiometry or chemical heterogeneity at the grain surface. In addition, grain boundary contaminants and their role on the superconducting properties are considered. Finally, the often encountered problem of transport Jc limitation in these materials is discussed in terms of interconnectivity of the grains, phases, the presence of secondary phases, impurities, inhomogeneities, and the grain boundary phases.
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