Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 1212-1214
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Annealing of boron through-oxide implanted silicon has been known to induce an incubated, oxygen-precipitation enhanced boron diffusion. In this letter, it is shown that annealing the "through-oxide'' implants in a NF3-containing N2 ambient effectively reduces the incubated enhanced diffusion. The effect of fluorine is further demonstrated for boron plus fluorine through-oxide implants with pure N2 annealing. Comparing the boron diffusion between boron plus fluorine and boron plus neon implants suggests that fluorine does not have a chemical effect on capturing the point defects that cause the enhanced diffusion. Rather, fluorine is believed to be incorporated in the oxygen precipitates, which alters the point defect generation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105506
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