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  • 1990-1994  (5)
  • 1991  (5)
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  • 1990-1994  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3494-3502 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallographic defects generated during the diffusion of zinc into GaAs have been studied using transmission electron microscopy and chemical etching techniques. By observing the effects of arsenic pressure on the defect density and the zinc penetration, the annihilation of the diffusion-induced defects in relation to the surface stoichiometry was investigated. It was found that the dissolution of the defects within the crystal is mainly caused by the out-diffusion of the diffusion-induced Ga interstitials to the surface. This is also supported by results obtained from post-diffusion annealing of the samples under different arsenic pressures. In addition, the possible inclusion of arsenic atoms in the interstitial dislocation loops found in GaAs is also discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Optical and quantum electronics 23 (1991), S. S813 
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Diffusion and heat treatment experiments in closed ampoules were carried out on two different molecular beam epitaxy-grown GaAs-AlAs superlattice wafers. All of the diffusion experiments were undertaken at 1000° C. The effects of varying the As and S vapour pressures as well as the diffusion time were investigated. Angle-lapping, transmission electron microscopy, X-ray photoelectron spectroscopy and secondary-ion mass spectroscopy were the techniques employed to analyse the samples. It was demonstrated that the diffusion of S enhances the group III interdiffusion or ‘intermixing’ compared with the effect of plain heat treatment. It was also shown that S-induced intermixing has two origins, one being the diffusion of S and its effects on the concentration of native defects and the other being a mechanism related to the formation of a coating on the semiconductor surface during the diffusion.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Tin diffusions into AlAs-GaAs superlattices have been performed in sealed silica ampoules. The present experiments, for the first time, examine the effect of As on tin induced disordering. SIMS and shallow-angle bevel revealed that both the tin surface concentration and the width of the disordered region are increased when a higher arsenic pressure inside the ampoule is used. Such dependence on the arsenic pressure is explained by the diffusion via a negatively charged complex which may take the form of [VGaSnAsVGa]−. The disordering effect could be attributed to the diffusion of Ga vacancies associated with the migration of the complexes. However, a more likely explanation is the Fermi-Level effect which has been proposed to explain the enhancement of the interdiffusion in Si doped samples.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 31 (1991), S. 223-230 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The equibiaxial elongational viscosity of polystyrene was determined using a lubricated squeezing technique. Constant strain rates up to Hencky strains of 4.5 could be maintained by a newly constructed instrument. Test results from controlled stress and controlled strain rate measurement were consistent and yielded well-defined steady-state viscosities. Measurements appeared to be unaffected by sample geometry, although proper lubrication is important in achieving steady state. The measured biaxial viscosity appeared to be strain rate thinning above a biaxial strain rate of ≈ 0.01 s-1 at 160°C. As anticipated in the Newtonian region, biaxial elongational viscosity was approximately six times the shear viscosity. Thinning indices of both shear and biaxial elongational viscosities were 0.75. Data obtained at various temperatures were shifted following the timetemperature superposition principle. The resulting master curve could be fitted by a Carreau model with n ≈ 0.3 and a time constant of 110 s.
    Additional Material: 11 Ill.
    Type of Medium: Electronic Resource
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  • 5
    Publication Date: 1991-03-15
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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