Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 4946-4949
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We studied nonradiative recombination centers in undoped (AlxGa1−x)0.5In0.5Pgrown by metalorganic vapor phase epitaxy using transient capacitance spectroscopy. We found three deep energy levels, including a mid-gap level. We drew an equation to get a capture cross section for minority carriers, and obtained it using isothermal capacitance transient spectroscopy measurement. The mid-gap level had an electron capture cross section of 2 × 10−10 cm2 and a hole capture cross section of 1 × 10−15 cm2. The time constant of nonradiative recombination through the mid-gap level was found to be comparable to that of radiative recombination. We concluded that the mid-gap level is an effective nonradiative recombination center that reduces photoluminescence intensity.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349041
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