ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The optical characterization of silicon-on-insulator structures formed by sequential implantation and annealing (SIA) has been carried out. The infrared transmission spectra show peaks characteristic of a thermal oxide, and confirm the high quality of the buried oxide. Moreover, the spectra obtained from these SIA samples, in comparison to those obtained from equivalent samples made with a single implant, show a shift of the main absorption peak to higher wave numbers, which can be attributed to excess oxygen. The higher concentration of oxygen in the SIA samples is corroborated by photoluminescence measurements which show the presence of dislocation-related bands broadened by the presence of oxygen.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104178
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