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  • American Institute of Physics (AIP)  (5)
  • Springer Nature
  • 2000-2004
  • 1995-1999
  • 1990-1994  (5)
  • 1970-1974
  • 1990  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Raman study under resonant conditions of defects near the interface in a GaAs/Si heterostructure (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4777-4781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Raman study has been performed, under resonant conditions, on a GaAs bevelled-edge layer grown on a Si substrate to characterize the optical and crystalline properties of the epilayer near the interface. According to the geometrical characteristics of the sample, a theoretical expression for the Raman intensities profile has been established and compared to the experimental data. This fitting procedure enables us to investigate the absorption coefficient of the GaAs layer due to the disorder-induced softening of the E1 edge. A quantitative analysis of the lattice disorder has been carried out on both longitudinal and transverse optical modes by studying the Raman line-shape evolution versus the laser spot position on the bevel edge. From this study, we have followed the recovery of the crystalline quality of the epilayer while going away from the interface, and evaluated the "Raman thickness'' of the dislocated layer. Using the spatial correlation model as a relationship between the disorder amount and the outcoming effects on the Raman line peaks, we have estimated the dislocation density at the heterostructure interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346133
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  • 2
    Electronic Resource
    Electronic Resource
    Tin diffusion and segregation in GaAs processed with a pulsed ruby laser (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3832-3837 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tin-diffused GaAs layer samples, with mean concentrations larger than 1019 cm−3, were obtained by irradiating with a ruby laser GaAs substrates covered with thin tin layers. Mobilities between 100 and 200 cm2/V s were obtained. Both carrier concentration and mobility decrease with increasing energy density. Strong segregation effects were observed in the samples processed with large energy densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346267
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  • 3
    Electronic Resource
    Electronic Resource
    Generalization of Bragg reflector geometry: Application to (Ga,Al)As-(Ca,Sr)F2 reflectors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5366-5368 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bragg reflectors based on (Ca,Sr)F2 and (Ga,Al)As are studied. Modeling and fabrication of these structures by molecular-beam epitaxy were performed. Quarter-wave Bragg reflectors were found to present an excellent reflectance around the wavelength of interest, 870 nm, for only three periods of bilayers. However, the structures grown exhibited cracks after epitaxy due to thermal stress between both materials. To alleviate this problem, other reflector geometries were investigated consisting of deviations from the classical Bragg reflector. The new geometries enable one to reduce the absolute or relative fluoride thickness within the structure. The results obtained show that the use of adequate geometries allows one to overcome the stress problem, and good heteroepitaxial reflectors with a crack-free surface morphology were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347034
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of the local environment on the properties of DX centers in Si-doped GaAs and dilute AlxGa1−xAs alloys (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 934-936 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si-doped GaAs and dilute AlxGa1−xAs alloys under hydrostatic pressure have been studied using deep level transient spectroscopy (DLTS). In GaAs the DLTS spectrum of the DX center is a single peak. In AlGaAs however, multiple peaks, resulting from different thermal emission rates from donors having different numbers of Al atoms as near neighbors, are observed. The pressure dependence of the electron occupation of individual DX levels shows that the larger the number of Al atoms near the Si donor, the lower the energy position of the DX level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102630
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  • 5
    Electronic Resource
    Electronic Resource
    Exponential critical-state model for magnetization of hard superconductors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3430-3437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have calculated the initial magnetization curves and hysteresis loops for hard type-II superconductors based on the exponential-law model, Jc(Hi) =k exp(−||Hi||/H0), where k and H0 are constants. After discussing the general behavior of penetrated supercurrents in an infinitely long column specimen, we define a general cross-sectional shape based on two equal circles of radius a, which can be rendered into a circle, a rectangle, or many other shapes. With increasing parameter p (=ka/H0), the computed M-H curves show obvious differences with those computed from Kim's model and approach the results of a simple infinitely narrow square pulse Jc(Hi). For high-Tc superconductors, our results can be applied to the study of the magnetic properties and the critical-current density of single crystals, as well as to the determination of the intergranular critical-current density from magnetic measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345355
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