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  • Articles  (23)
  • American Institute of Physics (AIP)  (15)
  • Cambridge University Press  (5)
  • International Union of Crystallography
  • 2005-2009
  • 1990-1994  (23)
  • 1960-1964
  • 1990  (23)
Collection
Source
Publisher
Years
  • 2005-2009
  • 1990-1994  (23)
  • 1960-1964
Year
Journal
Topic
  • 1
    Electronic Resource
    Electronic Resource
    Si impurity-induced layer disordering of Alx Ga1−x -GaAs quantum-well heterostructures by As-free open-tube rapid thermal annealing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6199-6206 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented describing Si impurity-induced layer disordering (IILD) and Al-Ga interdiffusion in AlxGa1−x As-GaAs quantum-well heterostructures (QWHs) using open-tube rapid thermal annealing (900–1000 °C) in a flowing N2/H2 ambient. The data show that Al-Ga interdiffusion is enhanced by n-type crystal doping and suppressed by p-type doping. By surrounding the active layers of the heterostructure with layers of opposite doping, we show that the surrounding layers modify the interdiffusion by controlling the diffusion of point defects to the active layers of the heterostructure. Data are presented showing the effects of dielectric encapsulation (SiO2, Si3N4 ) on Al-Ga interdiffusion. The data show that regardless of doping SiO2 enhances interdiffusion as compared to Si3N4. To achieve more thorough layer intermixing of AlxGa1−x As-GaAs QWHs, Si IILD is also investigated in the high-temperature As-poor regime. The experimental data show that in a high-temperature As-poor annealing ambient, little or no Si diffusion occurs from an elemental Si source in contact with a p-type GaAs QWH cap layer. To achieve Si diffusion under these conditions requires removal of the GaAs cap and the use of Al-reduced SiO2 or Si3N4 as a Si diffusion source. Based on secondary-ion mass spectroscopic measurements, direct comparison of Si diffusion from closed-tube (825 °C, 48 h) and open tube (1000 °C, 10 min) anneals shows increased Si incorporation and layer disordering at higher temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346911
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  • 2
    Electronic Resource
    Electronic Resource
    Si incorporation in laser-melted AlxGa1−xAs-GaAs quantum well heterostructures from a dielectric source (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6174-6178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented describing the incorporation of Si in locally laser-melted AlxGa1−xAs-GaAs quantum well heterostructures from a thin-film dielectric source. The composition of the melted material, the effects of the Si source (SiO2 or Si3N4) on impurity incorporation, and the doping behavior are examined via secondary-ion mass spectroscopy, electron dispersion x-ray spectroscopy, transmission electron microscopy, and scanning electron microscopy. The data indicate that upon melting, a (Si)y(AlxGa1−xAs)1−y alloy is formed from which impurity-induced layer disordering may be effected. After annealing the melt region is found to contain crystalline segregates, which are attributed to rapid thermal quenching of the melt. Applications of these results to the fabrication of buried-heterostructure lasers by laser-assisted disordering are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346907
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  • 3
    Electronic Resource
    Electronic Resource
    Absence of 13C incorporation in 13CCl4-doped InP grown by metalorganic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1760-1762 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intentional carbon doping of low-pressure metalorganic chemical vapor deposition (MOCVD) grown InP has been attempted with a 500 ppm mixture of 13CCl4 in high-purity H2, which has been used to obtain carbon-acceptor concentrations as high as 1×1019 cm−3 in GaAs. Under growth conditions similar to those used for heavy carbon incorporation in GaAs, injection of 13CCl4 into the growth reactor during growth of InP did not produce any measurable change in the carrier concentration of the InP epitaxial layers or any change in the 13C concentration above the 13C background in secondary-ion mass spectroscopy analysis. These results support previous low-temperature photoluminescence measurements of high-purity InP in which no residual carbon acceptor is observed under many growth techniques and growth conditions, and hence support the hypothesis that carbon is not incorporated in InP grown by MOCVD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103092
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  • 4
    Electronic Resource
    Electronic Resource
    Carbon tetrachloride doped AlxGa1−xAs grown by metalorganic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 836-838 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dilute mixture of CCl4 in H2 has recently been shown to be a suitable carbon doping source for obtaining p-type GaAs grown by metalorganic chemical vapor deposition (MOCVD) with carbon acceptor concentrations in excess of 1×1019 cm−3. To understand the effect of growth parameters on carbon incorporation in CCl4-doped AlxGa1−xAs, carbon acceptor concentration was studied as a function of Al composition, growth temperature, growth rate, and CCl4 flow rate using electrochemical capacitance-voltage profiling. The carbon incorporation as a function of Al composition, growth temperature, and CCl4 flow rate was also measured by secondary-ion mass spectroscopy. All layers were grown by low-pressure MOCVD using TMGa and TMAl as column III precursors, and 100% AsH3 as the column V source. Increased Al composition reduced the dependence of carbon concentration on the growth temperature. Reduced growth rate, which resulted in substantially decreased carbon acceptor concentrations in GaAs, had an insignificant effect on the carrier concentration of Al0.4Ga0.6As. A linear relationship between hole concentration and CCl4 flow rate in AlxGa1−xAs for 0.0≤x≤0.8 was observed. These results are interpreted to indicate that adsorption and desorption of CCly (y≤3) on the AlxGa1−xAs surface during crystal growth plays an important role in the carbon incorporation mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103321
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial growth of aligned polydiacetylene films on anisotropic orienting polymers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 131-133 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an epitaxial method for orienting thin films of polydiacetylenes on ordinary alignment polymers that have been stretched by rubbing. By selectively removing the alignment polymer using standard photolithographic techniques, we show that it is possible to obtain well-oriented polydiacetylene films in desired regions. Typical values for the birefringence are 0.14±0.01 for epitaxially grown films, enough to allow the formation of gratings and channel waveguides on patterned surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103051
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  • 6
    Electronic Resource
    Electronic Resource
    Layer disordering of n-type (Se) and p-type (C) AlxGa1−xAs-GaAs superlattices by S diffusion (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1720-1722 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented showing limited layer disordering (or intermixing) of S-diffused Se-doped or C-doped AlxGa1−xAs-GaAs superlattices. The S diffusion is characterized via secondary-ion mass spectroscopy, shallow angle beveled cross sections, and absorption measurements. Limited intermixing of column-III-site atoms (Al(arrow-right-and-left)Ga) as well as minimal displacement of the column-V-site acceptor C is observed. The S diffusion depth is much greater than that of the layer disordering, the magnitude of which is similar to that of native-defect vacancy-assisted disordering (vacancy VIII).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103126
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  • 7
    Electronic Resource
    Electronic Resource
    Doping and hydrogenation by ion implantation of glow discharge deposited amorphous silicon films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 241-243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of ion implanting boron into glow discharge deposited hydrogenated amorphous silicon films (a-Si:H). Electrical activity more than two orders of magnitude higher than previously reported1 is measured in our samples. Implantations of Si ions are used to study the effect of post-annealing on the radiation damage. Hydrogen introduced by low-energy implantation and diffusion is found to completely recover electrical and optical characteristics in Si-implanted specimens even at the highest concentrations (1021/cm3), where annealing for 1 h at 260 °C was insufficient. Introduction of H in B-implanted samples was found to deactivate the boron, which can be reactivated by low-temperature annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102843
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  • 8
    Electronic Resource
    Electronic Resource
    Column III-column V sublattice interaction via Zn and Si impurity-induced layer disordering of 13C-doped AlxGa1−xAs-GaAs superlattices (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 572-574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments are described employing secondary-ion mass spectroscopy (SIMS) to study the stability of 13C-doped Al0.5Ga0.5As-GaAs superlattices against Zn and Si impurity-induced layer disordering (IILD). The modulation depth of the SIMS 27Al and 13C signals is used as a sensitive probe of column III and column V sublattice interdiffusion. The data show that CAs is much more stable against Zn and Si IILD than the column III superlattice host crystal itself. The minor enhancement of CAs diffusion via the column III disordering agents, which is present to a significant extent for Si IILD but almost nonexistent for Zn IILD, suggests that there is no direct interchange of column III and column V sublattice atoms. The Zn and Si enhancement of carbon diffusion is probably caused by local Coulombic interaction between the diffusing Zn+i and Si+III species and the C−As acceptor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102748
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  • 9
    Electronic Resource
    Electronic Resource
    Fabrication of channel waveguides in polydiacetylenes: Composite diffused glass/polymer structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 13-15 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication of single-mode channel waveguides in spun films of polydiacetylenes using an inverted rib design. These robust guides consist of a planar layer of the polydiacetylene spun on a glass substrate in which high-index channels have been defined by ion exchange. Models of such guides show that most of the optical field of the guided wave is confined to the polymer layer, with the high-index glass channels providing lateral confinement. End-fire coupling of 1.06, 1.15, 1.32, and 1.55 μm light into the composite guides resulted in single-mode guiding with the light confined to the polymer layer. This approach to waveguide formation should be applicable to a wide range of polymeric materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102648
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  • 10
    Electronic Resource
    Electronic Resource
    Nanosecond switching using power MOSFETs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2211-2213 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: It is shown that using the secondary breakdown effect of a bipolar transistor, often called an avalanche transistor, the large input capacitance of a power MOSFET may be charged very quickly. A power MOSFET driven by an avalanche transistor is used to generate electrical pulses of 〉800 V into 50 Ω with rise times of approximately 3 ns. The output pulse amplitude can be varied by adjusting the drain-source voltage of the power MOSFET. The trigger delay of this circuit is approximately 5 ns, with jitter of 〈100 ps. This circuit has been used to generate pulses at a repetition rate of greater than 1 kHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141391
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