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  • American Institute of Physics (AIP)  (16)
  • 2015-2019
  • 1990-1994  (16)
  • 1993  (4)
  • 1990  (12)
  • 1
    Electronic Resource
    Electronic Resource
    Simulations of hydrogen deposition processes in a-Si:H film growth (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3295-3298 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular dynamics simulations of the deposition of atomic H on both c-Si and a-Si:H substrates are performed to understand the physical processes occurring in the presence of an atomic H flux during growth. The absorption probability, and dynamical behavior of the H are studied as a function of the incident H energy. Both hydrogen absorption and backscattering events are observed. The hydrogen reflection probability has a maximum around 50 eV and decreases at higher incident kinetic energies. In the hydrogen backscattering events a substantial subsurface penetration and energy transfer through collisions are observed. Hydrogen absorption events have been closely analyzed and a surface hydrogen release event was observed during an absorption event.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352977
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  • 2
    Electronic Resource
    Electronic Resource
    On the coupling of blast wave theory with atomic excitation in low-energy laser-induced plasmas formed in gases (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3809-3813 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-dependent intensities of the spectral lines emitted by laser-induced plasmas generated in several gases are presented. The time-resolved and spatially varying intensities of two once-ionized nitrogen lines were used to calculate radial temperature distribution of temperature within the plasma. A modified blast wave theory, in which ionization was included through the Saha equation and the equation of conservation of charge, was used to calculate time-dependent intensities of several spectral lines of C, N, He, and Ar. The temporal profiles of the spectral lines appear to be dependent on the ionization potentials of the species in the plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346285
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  • 3
    Electronic Resource
    Electronic Resource
    Propagation along a dielectric-coated cylinder immersed in a magnetoplasma (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1931-1933 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This communication presents a study of the dispersion relation for propagation in axisymmetric transverse magnetic modes along a dielectric-coated conducting cylinder embedded in a strongly magnetized plasma, the cylinder axis being placed parallel to the static magnetic field. Dispersion characteristics, covering all possible values of the plasma frequency, are plotted for typical values of εd and a/b, where εd is the dielectric constant of the coating, and a and b are the radii of the cylinder without and with the coating, respectively. A discussion of how the characteristics would change if εd or a/b is varied is also presented. In particular, the special case in which εd =1 and the coating is replaced by a vacuum sheath is investigated in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346589
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  • 4
    Electronic Resource
    Electronic Resource
    On a simplified analysis of the photoemission from quaternary alloys (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3032-3034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An attempt is made to study the photo-emission from bulk specimens of quaternary alloys on the basis of three-band Kane model. It is found, taking In1−xGaxAsyP1−y lattice matched to InP as an example, that the photo-emission increases, with increasing carrier degeneracy and decreasing alloy composition respectively. The valence band splitting parameter influences significantly the numerical magnitude of the photo-emission in both cases. The corresponding well-known results of parabolic semiconductors having nondegenerate electron concentration have also been obtained as special cases from our generalized expressions, under certain limiting conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346393
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  • 5
    Electronic Resource
    Electronic Resource
    Path integral description of polymers using fractional Brownian walks (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 9230-9236 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The statistical properties of fractional Brownian walks are used to construct a path integral representation of the conformations of polymers with different degrees of bond correlation. We specifically derive an expression for the distribution function of the chains' end-to-end distance, and evaluate it by several independent methods, including direct evaluation of the discrete limit of the path integral, decomposition into normal modes, and solution of a partial differential equation. The distribution function is found to be Gaussian in the spatial coordinates of the monomer positions, as in the random walk description of the chain, but the contour variables, which specify the location of the monomer along the chain backbone, now depend on an index h, the degree of correlation of the fractional Brownian walk. The special case of h=1/2 corresponds to the random walk. In constructing the normal mode picture of the chain, we conjecture the existence of a theorem regarding the zeros of the Bessel function.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465539
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  • 6
    Electronic Resource
    Electronic Resource
    Modified stepwise expansion method for the measurement of compressibility isotherms of gases up to 10 kbar (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1153-1154 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The stepwise expansion method for the measurement of compressibility isotherms of gases, developed recently in this laboratory, has been modified in order to measure those gases for which only low-pressure fiducial density data are available. The modified method has been tested with CH4 as a measuring gas at 298.15 K and up to 9.9 kbar.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141440
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  • 7
    Electronic Resource
    Electronic Resource
    Stochastic quantization of para-Fermi fields (1990)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 31 (1990), S. 156-163 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The application of the method of stochastic quantization originally attributed to Parisi and Wu has been extended to spinor fields obeying para-Fermi statistics. The connection between Euclidean and stochastic field theories is established in the conventional manner by proving the equivalence between a Langevin equation satisfied by para-Grassmann fields and a Fokker–Planck equation, the Hamiltonian of which has been constructed using para-Grassmann variables analogous to its construction from Grassmann variables in the Fermi case. As an example, a two-point Green function is calculated for any arbitrary value of order p of para-Fermi statistics, barring the pathological case p=2 which has been mentioned briefly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528854
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  • 8
    Electronic Resource
    Electronic Resource
    Low-temperature (10 K) photoluminescence of Ga1−xInxPyAs1−y quantum wells grown by metalorganic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 958-960 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga1−x Inx As1−y Py /InP (x=0.72, y=0.39) lattice-matched quantum wells (QWs) are grown by low-pressure metalorganic chemical vapor deposition on (100) and 3° misoriented substrates, using different variations of growth technique. Low-temperature (10 K) photoluminescence is used to characterize the QWs. We find that substrates oriented closely to (100) (no intentional misorientation) produce QWs of consistently higher quality as judged by the width of the n=1 photoluminescence peak. The use of growth interruptions at the well interfaces severely degrades the QW quality. The narrowest peak observed is 5.8 meV wide from a 70-A(ring)-wide well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102591
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  • 9
    Electronic Resource
    Electronic Resource
    Antiphase domain free growth of GaAs on Ge in GaAs/Ge/GaAs heterostructures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 244-246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/Ge/GaAs heterostructures have been grown by molecular beam epitaxy on GaAs substrates with nominally (100) and (100) tilted 4° towards [01¯1] orientations. High-energy electron diffraction is used to study the antiphase boundaries of the GaAs grown on epitaxial Ge. We have observed the annihilation of GaAs antiphase boundaries on Ge grown on (100) GaAs substrates. GaAs on Ge grown on tilted substrates is observed to be free of antiphase domains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102818
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  • 10
    Electronic Resource
    Electronic Resource
    Conduction- and valence-band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 833-835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have independently estimated the conduction- and valence-band offsets ΔEc and ΔEv in GaAs/Ga0.51In0.49P quantum wells by measuring the capacitance transient resulting from thermal emission of carriers from the respective wells. The heterostructure samples were grown by low-pressure metalorganic chemical vapor deposition. The band offsets are extrapolated from the emission activation energies with appropriate corrections. The estimated values of ΔEc and ΔEv are 0.198 and 0.285 eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102677
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