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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3795-3797 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We analyzed the Raman spectra and x-ray diffraction of two GaAs/Al0.3Ga0.7As superlattices grown by molecular-beam epitaxy on a 4 ° misoriented (001) GaAs substrate and an exactly (001)-oriented GaAs substrate respectively. From the frequency shifts of the longitudinal-optical- (LO) confined phonons in the Raman spectra and the variation in linewidths of both the LO-confined phonons and the satellite peaks in x-ray diffraction, we found that the 4 ° misorientation of the GaAs substrate from (001) toward [110] direction improves the interface quality of the superlattices.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4286-4289 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Capacitance-voltage measurements were performed on the InAs/AlSb/GaSb interband tunneling diode at various frequencies. Theoretical analyses using a self-consistent Schrödinger–Poisson solver were found in agreement with the experimental results under the forward-bias condition. The quantization energy of each subband of the electron in the InAs accumulation region is used to predict the tunneling current cutoff voltage in agreement with that of the current-voltage measurements. Therefore, the cutoff of the interband tunneling process is mainly caused by the crossover of the electron subband energy in the InAs conduction band with respect to the valence band of the GaSb electrode due to the increased external bias voltage.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 647-650 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have investigated the optical properties of high density electron gas in GaAs/Al0.3Ga0.7As modulation doped quantum wells by using the photoluminescence measurements with the pumping photon energies above and below the band gap of the barrier and the resonant Raman scattering. We point out that the previous assignment of the transition between the second conduction subband and the ground-state heavy-hole subband in the photoluminescence spectra may be flawed. Thus, there is no large breakdown of the parity selection rule of the optical matrix element in quantum wells even if the carrier concentration is as high as 1012 cm−2. Our results are consistent with the theoretical investigation. We have also estimated the band gap shrinkages due to many-body interactions, which are comparable with the previous calculations.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have examined the growth and device characteristics of In0.53+x Ga0.47−x As/ In0.52 Al0.48 As (0≤x≤0.27) pseudomorphic modulation-doped field-effect transistors on InP substrates. In situ reflection high energy electron diffraction oscillation studies were carried out to study the growth of pseudomorphic InGaAs on GaAs and InP substrates. The data from these measurements and a theoretical formalism based on energy minimization suggest that in the pseudomorphic growth regime increased strain causes growth modes to change from two-dimensional layer-by-layer to a three-dimensional island mode. The resulting interface roughness is used as a parameter to explain the observed trends in channel mobility and device performance. It is also shown that altered growth techniques, such as migration enhanced epitaxy, in which the surface reconstruction may be changed, can restore the layer-by-layer growth mode for large amounts of strain in the pseudomorphic layer.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1007-1012 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Two models of flux motion are employed to study the resistive properties of superconducting YBa2Cu3 O7−x thin films. The thermally activated flux creep model is employed to explain the dissipative behavior in the low resistivity region. However, when the resistivity is raised and approaches the normal state resistivity, the dissipative mechanism is gradually transferred from flux creep to flux flow. Based on the flux flow model, the upper critical field is estimated and shown as a function of temperature. In addition, a parallel resistivity circuit model is proposed to describe the transition behavior of the magnetic field dependence of resistivity versus current density characteristics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2499-2502 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An attractive-mode atomic force microscope is described in which the cantilever is held orthogonally with respect to the sample. The technique utilizes a linear differential optical detection scheme for the cantilever vibrations. In this design, the cantilever end is not bent to form a tip. This geometry substantially reduces the possibility of spontaneous jump-to-contact of the tip onto the sample, allowing the tip/sample separation to be set essentially to any desired value. Relatively large- and small-scale results are presented on imaging a smear of red blood cells, demonstrating the resolution and sensitivity.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 509-511 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Deep levels in the heteroepitaxial undoped InP layers grown directly on GaAs substrates by organometallic vapor-phase epitaxy have been investigated by deep-level transient spectroscopy. Two electron traps have been observed with activation energies of 0.4 and 0.57 eV in the temperature range between 150 and 310 K. The trap concentrations of these levels are in the order of 1015 cm−3 for samples with a carrier concentration of 1016 cm−3. Incorporation of atomic hydrogen into the InP layer by a photochemical vapor deposition system produces substantial decreases of the trap concentrations to 1014 cm−3 and of the carrier concentration to 1015 cm−3.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4832-4834 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The variations of the grain-boundary precipitates, the electrical resistivity, and the magnetization of a Ni-8 at. % Sn alloy have been investigated as functions of annealing temperature and annealing time. For samples annealed at 773 K, the averaged growth rate of the size of the grain-boundary precipitates is roughly 0.42 μm/h for the first 24 h; the electrical resistivity at T=10 K and the magnetization at T=10 K and H=5 kG vary monotonically with respect to the annealing time for the first 2 weeks, changing from 22.5 to 7 μΩ cm for the electrical resistivity and from 27 to 33 emu/g for the magnetization. A large tail section in the magnetization versus temperature curve was also observed in the aged samples. All these electrical and magnetic variations in the Ni-8 at. % Sn samples annealed at 773 K varied monotonically with respect to the growth of the grain-boundary precipitates.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 2536-2547 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Reactions of H atoms with N2O have two product channels yielding NH+NO and OH+N2. Both channels were observed via NH A 3Π←X 3∑ and OH A 2∑←X 2Π laser-induced fluorescence spectra. Photoinitiated reactions with N2O–HI complexes yield a much lower [NH]/[OH] ratio than under the corresponding bulk conditions at the same photolysis wavelength. For hot D-atom reactions with N2O, this effect is somewhat more pronounced. These results can be interpreted in terms of entrance channel geometric specificity, namely, biasing hydrogen attack toward the oxygen. Another striking observation is that the OH and OD rotational level distributions (RLD) obtained under bulk conditions differ markedly from those obtained under complexed conditions, while the NH as well as the ND RLD are similar for the two environments. In addition, OH Doppler profiles change considerably in going from bulk to complexed conditions, while such an effect is not observed for NH. The changes observed with the OH RLD are most likely due to OH–halogen interactions and/or entrance channel specificity. Under bulk conditions, the Doppler shift measurements indicate a large amount of N2 internal excitation (i.e., ∼25 000 cm−1) for the OH (v=0) levels monitored. This is consistent with a reaction mechanism involving an HNNO° intermediate. The hot hydrogen atom first attaches to the terminal nitrogen of N2O and forms an excited HNNO° intermediate having a relatively elongated N–N bond compared with N2O. Then the H atom migrates from nitrogen to oxygen and exits to the N2+OH product channel, leaving N2 vibrationally excited. A simple Franck–Condon model can reconcile quantitatively the large amount of N2 vibrational excitation.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 2149-2152 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: We report a new variant of the femtosecond transition-state spectroscopy technique−transient stimulated emission pumping (TSEP). The initial application of TSEP to studies of ozone visible photodissociation indicates that the molecule is trapped in the Franck–Condon region for ∼90 fs. The wave packet then spreads along the reaction coordinate.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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