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  • American Institute of Physics (AIP)  (16)
  • Oxford University Press  (4)
  • 1985-1989  (20)
  • 1989  (20)
  • 1
    Electronic Resource
    Electronic Resource
    Rotational analysis of A˜ 2A1↔X˜ 2E electronic transition of the jet-cooled methylthio radical (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 6852-6857 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A set of molecular parameters describing both the X˜ and A˜ states of CH3S, has been obtained by a joint fitting of the rotationally resolved electronic transitions observed in a free-jet-cooled laser-induced fluorescence study of CH3S and an earlier microwave study of its X˜ state. The present work shows that because of incomplete information, nearly all of the previously reported molecular parameters for CH3S must be significantly revised. The present observations show an unusual electronic structure for the radical, characterized by a short C–S bond distance and peculiar methyl group geometry in the ground state. The C–S bond is observed to lengthen markedly in the excited A˜ state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456258
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  • 2
    Electronic Resource
    Electronic Resource
    Laser-induced emission of CH3O in solid argon (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 81-86 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The A 2A1−X 2E fluorescence of CH3O in solid Ar in the wavelength range 310–420 nm has been studied either by simultaneous laser photolysis and excitation of CH3ONO in the Ar matrix or by laser excitation of the products deposited from the reactions of microwave-discharged CF4 with CH3OH diluted by Ar. The spectrum showed an extensive progression in C–O stretching (ν3). The zero-phonon lines of 12CH3O and 13CH3O yielded unambiguous vibrational assignments with ν00=31 291, ω‘e=1051, and ω‘ex‘e=6.5 cm−1 for 12CH3O. Observation of several weak combination bands also yielded ν‘2=1356, ν‘4=2758, and ν‘5=1406 cm−1. The laser excitation spectra in the 273–322 nm region also exhibited an intense progression in C–O stretching with ω'e=657 and ω'ex'e=4.4 cm−1 for 12CH3O. Additional wave numbers ν'2=1308 and ν'5=1410 cm−1 were also obtained from the combination bands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456471
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  • 3
    Electronic Resource
    Electronic Resource
    Equivalence of higher-order Lagrangians. II. The Cartan form for particle Lagrangians (1989)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 30 (1989), S. 902-906 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: It is shown how Cartan's method of equivalence may be used to obtain the Cartan form for an r th-order particle Lagrangian on the line by solving the standard equivalence problem under contact transformations on the jet bundle J r+k for k≥r−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528358
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  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature diamond growth in a microwave discharge (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2739-2741 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new regime for plasma-assisted chemical vapor deposition (CVD) of diamond is reported in which high quality diamond films can be deposited on silicon with relatively high ratios of methane in hydrogen mixtures and at significantly lower substrate temperatures than previously reported. The deposition was achieved in a microwave plasma discharge with a feed gas consisting of a mixture of only methane and hydrogen. The surface temperature of a molybdenum sample, when exposed to the same plasma environment, was measured at 500 °C with an infrared scanning camera. This substrate temperature is substantially lower than the 700–1000 °C range generally regarded as the optimal regime for CVD diamond growth. Analysis by Raman spectroscopy showed that films deposited with a 2% methane in hydrogen mixture produced a near graphite-free diamond film at our reported low-temperature regime, while deposition at 1000 °C resulted in films with a much higher graphitic content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101939
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of arsenic concentration on the formation of dislocation loops near the projected ion range in high-dose As+-implanted (001) Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2304-2306 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of a two-layer structure and the inhibition of the formation of dislocation loops near the projected ion range (Rp ) have been observed by cross-sectional transmission electron microscopy in 80 keV, 1×1016 and 2×1016/cm2 As+-implanted (001) Si, respectively. The correlations among the arsenic concentration, electrical inactivation of impurity, suppression of the formation of interstitial loops near Rp, and retardation of the epitaxial regrowth rate provide significant insight into the point-defect migration and agglomeration during solid phase epitaxial regrowth of implantation amorphous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102045
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  • 6
    Electronic Resource
    Electronic Resource
    Preparation of Y-Ba-Cu-O superconducting thin films using BaF2 as a buffer layer (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2479-2480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of barium fluoride (BaF2 ), used as a buffer layer between the substrate and the superconducting films, dramatically improve the properties of Y-Ba-Cu-O (YBCO) superconducting films deposited by metalorganic chemical vapor deposition on yttrium-stabilized zirconia (YSZ) substrates. For the as-deposited films at a substrate temperature of 780 °C, the observed transition temperature Tc of 80 K on the BaF2 /YSZ structure represents the highest value reported to date. By using BaF2 buffer layers, superconducting films formed by using a paste of the YBCO powder and a binder, on BaF2 /Si provided a Tc of 80 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101541
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  • 7
    Electronic Resource
    Electronic Resource
    Dense Bi-Sr-Ca-Cu-O superconducting films prepared by spray pyrolysis (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 957-959 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dense oriented superconducting Bi-Sr-Ca-Cu-O films having zero resistance as high as 100 K have been made using a technique in which spray deposited and pyrolyzed films are densified by either melt quenching or flux sintering. The highest Tc films were those prepared with PbO as a dopant/flux on MgO substrates. Films without lead doping prepared on both BeO and MgO substrates yielded resistive transitions of 81–83 K. For these latter films, it was demonstrated that a subsequent anneal in argon enhanced the Tc to 87 K. The films were characterized by x-ray diffraction, scanning electron microscopy, and four-point probe resistance measurements. The critical current density of a film having a Tc of 81 K was 4000 A/cm2 at 78 K and 14 000 A/cm2 at 55K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100778
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  • 8
    Electronic Resource
    Electronic Resource
    Homoepitaxial films grown on Si (100) at 150 °C by remote plasma-enhanced chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1885-1887 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature silicon epitaxy is critical for future generation ultralarge scale integrated circuits and silicon-based heterostructures. Remote plasma-enhanced chemical vapor deposition has been applied to achieve silicon homoepitaxy at temperatures as low as 150 °C, which is believed to be the lowest temperature reported to date. Critical to the process are an in situ remote plasma hydrogen cleaning of the substrate surface in an ultrahigh vacuum growth chamber prior to epitaxy, and substitution of thermal energy by remote plasma excitation via argon metastables and energetic electrons to dissociate silane and increase adatom mobility on the surface of the silicon substrate. Excellent crystallinity with very few defects such as dislocations and stacking faults is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102161
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  • 9
    Electronic Resource
    Electronic Resource
    Direct observation of discrete layers of dislocation loops near the projected ion ranges in high-dose P+-implanted (001)Si by cross-sectional transmission electron microscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 565-567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of discrete layers of dislocation loops near the projected ion ranges (Rp loops) of 65–80 keV, high-dose (5×1015–2×1016/cm2) P+-implanted (001)Si was observed by cross-sectional transmission electron microscopy (XTEM). Both the energy and dose dependence of the annealing behaviors of Rp loops provided strong evidences that they are related to P clustering. The inactivation of dopants due to precipitation, hence the appearance of Rp loops, is correlated to the sheet resistance data. The retardation of the solid phase epitaxial growth was shown to be related to the formation of Rp loops. Using Rp loops as an indicator of changes in point-defect distribution, a combined XTEM and plan-view TEM study was found to be most appropriate for the study of the precipitation process in high-dose P+-implanted silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101833
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  • 10
    Electronic Resource
    Electronic Resource
    Bessel beam ultrasonic transducer: Fabrication method and experimental results (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2066-2068 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental results from a first-of-a-kind ultrasonic transducer that generates a beam with a Bessel function profile. Using a technique of nonuniform poling, an axially symmetric Bessel function pattern is "polarized into'' a piezoelectric ceramic element. The resulting circular-disk transducer has the usual full-plating electrode configuration, but produces an ultrasonic beam with a radial displacement profile approximating that of the Bessel function J0 (r), both in amplitude and in phase. The radiation field of a 1-in.-diam, 2.25 MHz Bessel transducer mapped out with a point probe shows good agreement with calculated results using a Gauss-Hermite model. Bessel transducers are of particular interest in attempts to achieve "diffractionless'' beams.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102107
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