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  • Articles  (9)
  • Springer  (5)
  • American Institute of Physics (AIP)  (4)
  • Wiley-Blackwell
  • 2015-2019
  • 1985-1989  (9)
  • 1989  (9)
  • 1
    Electronic Resource
    Electronic Resource
    Two-laser resonance-enhanced photoionization spectrum of benzene (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 3490-3497 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: This paper reports results of an experiment involving two-laser resonance-enhanced photoionization of benzene. The excitation sources were two frequency-doubled dye lasers. The first laser pumped the molecule to a selected vibronic level of its first excited singlet state (1B2u), from where it was ionized by a time-delayed pulse of the second laser. The ion yield depends on the intermediate vibronic state as well as on the wavelength of the ionizing laser. From the structures and intensities of the measured ion spectra we derived vibrational frequencies and molecular parameters of the ground electronic state of the ion to a remarkable accuracy. The contributions of autoionizing Rydberg levels to the ionization cross section can clearly be distinguished from direct ionization. Several resonance peaks were assigned to transitions to vibrational modes within these Rydberg states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455859
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  • 2
    Electronic Resource
    Electronic Resource
    Barrier tuning by means of a quantum, interface-induced dipole in a doping layer (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1564-1566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We consider a sharply defined doping layer near the interface of a heterostructure on the narrow-gap side. It is shown that an interface-induced dipole moment results, whose magnitude depends on the quantum spread of the electronic charge. The result of thermionic emission measurement of the barrier height is compared with a self-consistent, nonparabolic subband calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102245
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  • 3
    Electronic Resource
    Electronic Resource
    Millimeter wave surface resistance of epitaxially grown YBa2Cu3O7−x thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 757-759 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the surface resistance of two c-axis oriented YBa2Cu3O7−x thin-film samples in a copper host cavity at 86.7 GHz between 4.2 and 300 K. High quality films of 0.6 and 0.4 μm thickness have been grown epitaxially on SrTiO3 by pulsed excimer laser ablation. Their millimeter wave absorption drops sharply at a transition temperature of 86 and 88 K to a corresponding surface resistance at 77 K of 18 mΩ and less than 8 mΩ, respectively. These values exceed the best results on polycrystalline samples and come close to the expectation from classical superconductors. Therefore, applications of high Tc superconductors up to THz frequencies can be envisaged now.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101472
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  • 4
    Electronic Resource
    Electronic Resource
    Electrophoretic deposition of textured YBa2Cu3O7−x films on silver substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5940-5943 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have deposited 10–20-μm-thick YBa2Cu3O7−x films by an electrophoretic process on silver substrates in a magnetic field of 8 T. X-ray diffraction patterns of these 2.4-cm-diameter samples show a high degree of c-axis texturing perpendicular to the surface. Their microwave surface resistance Rs was measured at 21.5 GHz in the temperature range from 4.2 to 300 K. It was found to drop sharply at 92.4 K to reach 18±3 mΩ at 77 K and less than 3 mΩ at 4.2 K. These first results exceed the values obtained from bulk samples and untextured thick films, and are lower than Rs of pure copper at the same frequency and temperature. The electrophoretic deposition technique is applicable to large substrates of nonplanar geometry and is therefore suitable for applications of high-Tc superconductors in the field of microwave technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343620
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  • 5
    Electronic Resource
    Electronic Resource
    Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere (1989)
    Springer
    Applied physics 48 (1989), S. 315-319 
    Details
    ISSN: 1432-0630
    Keywords: 72.80.Ey
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Nominally undoped InP wafers have been annealed in a phosphorus atmosphere under a pressure of about 5 bar at temperatures of 900 °C for about 80 h. It was found that the electrical properties of the samples changed considerably after this treatment. A room temperature resistivity of up to 2×107Ωcm (semi-insulating behaviour) was obtained in the bulk of the samples. The resistivity finally obtained depends on the starting carrier concentration of the untreated samples. The Hall coefficient and Hall mobility have been measured up to 600 °C. The results can be interpreted in terms of a deep electronic level (E A=0.63 ... 0.65 eV below the conduction band). The Hall coefficient was always found to be negative resulting in a Hall mobility of 1.4 to 4.9×103 cm2/Vs. The highest resistivity in nominally undoped bulk InP so far reported in the literature [1] was ϱ=3.6 × 105Ωcm. Therefore, this paper demonstrates for the first time that a really semi-insulating behaviour of ϱ〉107 Ωcm can be achieved for bulk InP with the purity of nominally undoped material (1015 to 1016cm−3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618891
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  • 6
    Electronic Resource
    Electronic Resource
    The effect of H-dilution on the transport properties of doped a-Si1−x Ge x : H alloys (1989)
    Springer
    Applied physics 49 (1989), S. 165-169 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper is concerned with the optimization of growth conditions for a-Si1-x Ge x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616295
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  • 7
    Electronic Resource
    Electronic Resource
    Localization of Y chromosome sequences and X chromosomal replication studies in XX males (1989)
    Springer
    Human genetics 〈Berlin〉 81 (1989), S. 144-148 
    Details
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary By in situ hybridization, Y-specific DNA sequences were localized on Xp22.3-Xpter of one of the two X chromosomes in all of eleven XX males studied. In nine of the cases the presence of the Y-specific DNA did not affect random X inactivation in fibroblasts. Fibroblasts of the other two cases showed a preferential inactivation of the Y DNA-carrying X chromosome. In only one of these two exceptions blood lymphocytes could also be studied, and here, random inactivation of the Y DNA-carrying X chromosome occurred. Furthermore, the gene dosage of steroid sulfatase (STS) was examined by Southern blot analysis. In ten of the cases including the one showing random X-inactivation in lymphocytes but not in fibroblasts, a double dosage of the STS gene is present. The remaining case with non-random inactivation shows a single STS gene dosage. This case was reported previously to have STS enzyme activity in the male range. It is assumed that, as a consequence of an unequal X-Y interchange, a deletion of X-specific DNA sequences may result in the preferential inactivation of the Y DNA-carrying X chromosome.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00293890
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  • 8
    Electronic Resource
    Electronic Resource
    Introductory remarks for the first plenary Workshop on Laser Safety and Laser Tissue Interaction (1989)
    Springer
    Lasers in medical science 4 (1989), S. 3-3 
    Details
    ISSN: 1435-604X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Physics , Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02276663
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  • 9
    Electronic Resource
    Electronic Resource
    Basic laser tissue interaction (1989)
    Springer
    Lasers in medical science 4 (1989), S. 7-15 
    Details
    ISSN: 1435-604X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Physics , Technology
    Notes: Conclusion In conclusion, it is of utmost importance that when discussing facts and publishing results, all actual parameters must be disclosed, not only total power output of the laser. Power density and energy density, as well as temporal behaviour, such as cw- or pulsed laser systems and pulse shape, repetition rate and optical properties of the treated tissue must be outlined in such a manner, that there can be a common understanding of the result for comparison purposes. The clarification of terms used and precise description of parameters will be one of the most essential points in laser treatment and hence in safety.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02276665
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