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  • American Institute of Physics (AIP)  (42)
  • 2000-2004  (27)
  • 1985-1989  (15)
  • 2001  (27)
  • 1989  (15)
  • 1
    Electronic Resource
    Electronic Resource
    Rotationally resolved spectra of the 610 and 610110 band of benzene in a moderately cold molecular beam: Spectral and dynamical analysis (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 4555-4563 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rotationally resolved spectra of the 610 and 610110 band of benzene, C6H6, in a supersonic molecular beam at rotational temperatures between 8 and 50 K are reported. The spectra consist of lines of 85 MHz linewidth. An unexpectedly low saturation intensity of ≈104 W/cm2 is found for the observed one-photon transitions, and it is shown that the saturation intensity differs for different rotational lines within one vibronic band. The rovibronic line spectra are analyzed within the framework of a rigid symmetric top model and highly precise values of the rotational constants are determined. In addition, the rotationless transition frequencies ν00 are obtained with high precision. The spectrum of the 610 band shows no signs of rotational perturbations, while the 610110 band at higher vibrational excess energy shows indications of perturbations for lines with K' above 10. The decay times of single rotational states within the 6111 vibronic state are reported and no rotational dependence of the decay time is found in agreement with the statistical limit character of the interstate nonradiative process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456743
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  • 2
    Electronic Resource
    Electronic Resource
    Passivation of an anodic oxide/p-Si interface stimulated by electron injection (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4636-4642 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The positive oxide charge (Qox) and the concentration of nonradiative recombination defects (Nit) at a thin anodic oxide/p-Si interface are probed in situ by pulsed photovoltage and photoluminescence techniques during electron injection. Qox and Nit decreased strongly due to electron injection. The observed effect is suggested to be inverse to the negative-bias-temperature instability. Defect reactions at the anodic oxide/p-Si interface are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356431
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetization dynamics in NiFe thin films induced by short in-plane magnetic field pulses (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7648-7650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization dynamics in a thin NiFe film was investigated by applying short in-plane magnetic field pulses while probing the response using a time-resolved magneto-optical Kerr effect setup. In-plane magnetic field pulses, with duration shorter than the relaxation of the system, were generated using a photoconductive switch and by subsequent propagation of current pulses along a waveguide. The field pulses with typical rise and decay times of 10–60 and 500–700 ps, respectively, have a maximum field strength of 9 Oe, by which Permalloy elements of 16 nm thickness and lateral dimensions of 10×20 μm were excited. The observed coherent precession of a ferromagnetic NiFe system had precession frequencies of several GHz and relaxation times on a nanosecond time scale. The dynamic properties observed agree well the Gilberts's precession equation and the static magnetic properties of the elements © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359462
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  • 4
    Electronic Resource
    Electronic Resource
    Low frequency modes of surface adsorbed dye molecules studied by optical high resolution techniques (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 1944-1945 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We observed for the first time in an optical high resolution experiment (fluorescence line narrowing) the coupling of low frequency adsorbate motions to vibronic bands of the electronic transition of quinizarin adsorbed on γ-alumina. These motions may provide an important dephasing mechanism for the electronic excitation of absorbed molecules. The increased hole width of adsorbed dyes which is several times larger than in amorphous hosts is thought to be caused by these low frequency modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457052
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  • 5
    Electronic Resource
    Electronic Resource
    Statistical fluctuations of decay rates (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 3934-3947 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We introduce a general Hamiltonian describing two coupled subsystems, each having a finite zero-order decay probability. With use of simple statistical assumptions on the underlying states, we derive new probability distributions of individual decay rates. We analyze the cases of weak and intermediate to strong coupling, respectively. The resulting distributions often resemble a suitable χ2 distribution, but do not belong to that class of functions. An interpretation of decay rates in terms of a χ2 model thus may lead to wrong conclusions. As a concrete realization, we study a Hamiltonian describing the non-Born–Oppenheimer coupling of two electronic states via the nuclear motion. The model is applied to the calculation of absorption-type spectra of NO2 and C2H+4. We investigate statistical properties of energy levels, line intensities, and decay rates. For NO2, we find from all statistics a completely irregular behavior, consistent with random matrix predictions and demonstrating the strong mixing of zero-order states due to the nonadiabatic coupling. For C2H+4, all statistics exhibit characteristic deviations from the irregular limit that can be given a consistent interpretation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456825
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  • 6
    Electronic Resource
    Electronic Resource
    Sub-Doppler rotationally resolved overtone spectroscopy of the HCN dimer (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 4623-4625 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new molecular beam color center laser spectrometer, which can be tuned single mode under computer control around 1.5 μm, has been used to obtain the sub-Doppler, rotationally resolved, first overtone spectrum of the nonbonded C–H stretch vibration of the HCN dimer. As for the corresponding fundamental vibration, the linewidth is instrument limited, posing a minimum limit of 11 ns to the lifetime of the excited complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456694
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  • 7
    Electronic Resource
    Electronic Resource
    The use of weak magnetic fields in collisions of polarized atoms (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 729-737 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have experimentally and theoretically investigated the behavior of excited Na atoms under the combined influence of resonant laser light and a weak magnetic field. The use of weak magnetic fields gives another possibility to vary the polarization of the atoms, additional to variation of the polarization of the exciting laser. We calculated in detail the influence of weak magnetic fields on the density matrix describing the excited atoms, using generalized rate equations. We checked the results of our model experimentally, at the Na(3 2 S1/2, Fl=2) →(3 2 P3/2, Fu =3) transition, excited with circularly polarized light. We determined the polarization of the excited atoms, by measuring the fluorescence light at various angles, as a function of both magnetic field strength and laser irradiance. Model and experiment agreed very well. We applied our model to the associative ionization of the excited Na atoms. We measured the ion signal as a function of magnetic field. Analyzing the results, we could determine a specific associative ionization cross section, which is not accessible in our experimental geometry without the use of magnetic fields. Thereby we showed that the application of magnetic fields in polarization dependence studies can provide us with additional information about the process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456151
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  • 8
    Electronic Resource
    Electronic Resource
    Erratum: 2H–NMR study of the glass transition in supercooled ortho-terphenyl [J. Chem. Phys. 88, 2139 (1988)] (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 7613-7613 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456708
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  • 9
    Electronic Resource
    Electronic Resource
    The effect of thermal annealing on the properties of Al–AlOx–Al single electron tunneling transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2528-2532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal annealing on the properties of Al–AlOx–Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming gas atmosphere at different temperatures and for different times, distinct and reproducible changes of their resistance and capacitance values were found. According to the temperature regime, we observed different behaviors with regard to the resistance changes, namely the tendency to decrease the resistance by annealing at T=200 °C, but to increase the resistance by annealing at T=400 °C. We attribute this behavior to changes in the aluminum oxide barriers of the tunnel junctions. The good reproducibility of these effects with respect to the changes observed allows the proper annealing treatment to be used for postprocess tuning of tunnel junction parameters. Also, the influence of the annealing treatment on the noise properties of the transistors at low frequency was investigated. In no case did the noise figures in the 1/f regime show significant changes. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389077
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  • 10
    Electronic Resource
    Electronic Resource
    Hot-hole lasers in III–V semiconductors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1692-1697 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Following the success of p-Ge hot-hole lasers, there is potential for using other semiconductor materials, notably III–V materials such as GaAs and InSb. Previous analysis had suggested that a large effective mass ratio between the heavy and light holes is advantageous, which implies that InSb would make an excellent hot-hole laser. Using our Monte Carlo simulation of both GaAs and InSb hot-hole lasers in combination with a rate equation model, we see that previously accepted criteria used to predict performance are not always reliable, and we suggest suitable alternatives. The simulation results include gain and gain bandwidth as a function of field strength and laser frequency, and alternative field orientations and photon polarizations are considered. Comparisons are made with bulk p-Ge systems. The optimum conditions predicted by our simulation could then be used in the design of quantum-well hot-hole lasers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384492
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