ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
  • 1985-1989  (20)
  • 1970-1974
  • 1988  (20)
Sammlung
Erscheinungszeitraum
  • 1985-1989  (20)
  • 1970-1974
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 913-915 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The crystal structure and microstructures of a high Tc BiSrCaCuO (BSCCO) compound were characterized by transmission electron microscopy, x-ray diffraction (XRD), and energy dispersive spectrometry (EDS). Convergent beam electron diffraction (CBED) analysis established that the crystal is of mm2 symmetry. Combined with electron diffraction, XRD, and EDS data, the high Tc superconducting BSCCO compound was found to be of the Pnn2 space group, orthorhombic in structure with a=0.540 nm, b=2.689 nm, and c=3.040 nm and with an approximate composition of Bi2Sr2CaCu2Oy. Diffraction contrast analysis indicated that the dislocations are predominantly of screw character with [010] or [001] Burgers vectors. However, edge type dislocations and dislocations with [100] Burgers vector were also observed. The magnitude of the Burgers vector along the [100] direction was determined to be 1/2 [100] by high-resolution lattice imaging. Stacking faults and small-angle grain boundaries were frequently observed. The presence of a high density of defects in the superconducting oxide may facilitate the processing of the material and serve as effective flux line barriers.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1434-1436 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The crystal structure of a Tl-Ca-Ba-Cu-O compound in Tc onset=155 K and Tc zero=123 K superconducting specimens was characterized by transmission electron microscopy. Convergent beam electron diffraction analysis established that the phase is of P4/mcc space group. The lattice parameters of the phase were determined to be a=b=0.394 nm and c=3.95 nm. The phase was found to be primarily of a ten-subcell structure by both high-resolution lattice imaging and diffraction pattern analysis. The composition of the grains with the ten-subcell structure being predominant was measured by energy dispersive spectrometry to be TlCa2Ba3Cu4Ox. Polytypes of the phase with four- and five-subcell structures were also observed. The five-subcell structure was identified to be of P4/mmm space group with a=b=0.394 nm and c=1.97 nm. The compositions of the specimens were measured to vary in composition ratios of Tl, Ca, Ba, and Cu from 1:2:2:3 to 1:2:3:4. The results strongly suggested that the TlCa2Ba3Cu4Ox phase is a high Tc superconducting phase with an exciting possibility that superconducting transition occurs at 155 K for this phase.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3505-3511 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Interfacial reactions of cobalt thin films on BF+2 -implanted (001)Si have been studied by both cross-sectional and plan-view transmission electron microscopy as well as by sheet resistance measurements. The implantation-amorphous samples were found to favor the formation of CoSi2 at 400 °C and laterally uniform growth of the phase at higher temperatures. Two discrete layers of fluorine bubbles were observed in cobalt silicides in all BF+2 -implanted samples annealed at 400–800 °C. In 800–900 °C annealed samples, large bubbles were often observed to distribute near the CoSi2 grain boundaries. The results indicated that (1) fluorine atoms diffuse rapidly at a temperature as low as 400 °C, and (2) appreciable amounts of fluorine atoms are present with low solubility in cobalt silicides after annealing at 400–900 °C. The residual interstitial defects in BF+2 -implanted samples were completely annihilated by CoSi2 formation at 800–900 °C. The elimination of all interstitial defects in these samples is attributed to the injection of a high density of vacancies which were generated during silicide formation. The electrical resistivity of CoSi on blank silicon was measured to be about 350 μΩ cm. The presently measured electrical resistivity value is believed to be one of the most accurate values obtained for CoSi to date. Factors influencing the formation of cobalt silicides and defect structure are discussed.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1163-1167 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Transmission electron microscopy has been applied to the study of interfacial reactions of iridium thin films on silicon with particular emphasis on the epitaxial growth of IrSi3 on (111) and (001)Si. The formation of precursor phases, IrSi and IrSi1.75, were found to occur mainly in the temperature ranges of 300–500 and 600–900 °C, respectively. The stable IrSi3 was found to grow epitaxially on (111) and (001)Si annealed at 1000–1100 °C. There are three dominant modes of epitaxial IrSi3 on (111)Si and one dominant mode of epitaxial IrSi3 on (001)Si. Interface structures of these different epitaxial modes were determined by diffraction contrast analysis. The quality of IrSi3 epitaxy in terms of the fraction of the silicon surface coverage, size, and the regularity of the interfacial dislocations was found to be the best in (111) samples annealed at 1000 °C. Epitaxial regions of IrSi3, as large as 40 μm in size, were observed on (111)Si. No direct correlation between lattice match and quality of epitaxy could be found. The Burgers vectors of edge-type dislocations for several modes of silicide epitaxy were found to be along the directions with larger lattice mismatches in agreement with a theory by Markov and Milchev [Surf. Sci. 136, 519 (1984)]. A superlattice structure of IrSi3 was found from diffraction pattern analysis. The superlattice structure was determined to be of hexagonal structure and has a unit cell with dimensions three times larger than that reported for IrSi3.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2523-2526 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A chemical spray pyrolysis method has been applied to grow epitaxial films of a high Tc Y-Ba-Cu-O compound (YBCO) on (001)MgO. Films as thin as 0.6 μm in thickness was found to exhibit excellent superconducting transition behavior. For films up to 2 μm in thickness, typical values of Tc onset, Tc zero and transition width (90%–10%) were measured to be 82, 76, and 1.5 K, respectively. Both plan-view and cross-sectional transmission electron microscopy revealed that the orientation relationships between the epitaxial films and the substrate are [001]YBCO//[001]MgO and (110)YBCO//(200)MgO. Twins, which may be perceived as domains that are rotated 90° along the c axis of the thin films with respect to the substrate, were found to be copiously present. The influences of the configuration of the oriented growth of overlayer thin films on the superconducting properties are addressed. The advantages of the chemical spray pyrolysis in producing superconducting thin films are outlined.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2778-2782 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of backsputtering and amorphous silicon capping layer on the formation of TiSi2 in sputtered Ti films on (001)Si by rapid thermal annealing have been studied by scanning and transmission electron microscopy as well as Auger electron spectroscopy. Backsputtering cleaning of the silicon substrates was found to be effective in alleviating the island formation and in promoting the epitaxial growth. Auger depth profiles indicated that intermixing of Ti and Si occurred in samples with substrates cleaned by in situ backsputtering prior to depositions. High-resolution lattice images of cross-sectional samples revealed the presence of continuous amorphous layers between polycrystalline Ti grains and single-crystal Si substrates in the backsputtering-cleaned samples. An amorphous silicon capping layer was found to degrade the surface morphology and hinder the formation of silicide epitaxy. The formation and growth of epitaxial regions are more difficult in samples with amorphous silicon capping layer since an additional step is required for the polycrystalline grains in the upper layer to realign with the underlying epitaxial TiSi2 layer to form an epitaxial region. Better surface morphology is correlated with improved silicide epitaxy with its more favorable energetics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3593-3597 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Transmission electron microscopy (TEM), energy dispersive analysis of x ray (EDS), x-ray diffraction, electrical resistance, and magnetic susceptibility measurements were applied to characterize the structure and microstructures of a high-Tc superconducting YBaSrCu3O7−δ compound. The sintered samples were found to be predominantly of a single phase with a modified perovskite structure. Combined EDS/TEM and high-resolution lattice imaging with computed image simulation data showed that the atomic ratio of Sr and Ba atoms is about unity and Ba sites in YBa2Cu3O7−δ compound were partially substituted by Sr atoms in the three-layer perovskite structure, in agreement with the results of a previous neutron diffraction study. It was also found that the marked contrast difference in high-resolution images along [100] and [010] directions of the high-Tc oxygen-deficient superconducting crystals can be used to advantage to distinguish [100] and [010] directions of the modified perovskite structure in TEM. Lattice defects such as twins and dislocations were observed and analyzed.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2821-2823 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial CrGe was grown locally on both (111) and (001) Ge by a solid-phase epitaxy scheme. Both plan-view and cross-sectional transmission electron microscopy were applied to determine the orientation relationships between epitaxial CrGe and germanium substrates, and to characterize the microstructural features of epitaxial regions and CrGe/Ge interfaces. The best CrGe epitaxy was obtained in (111) samples annealed first at 250 °C for 1 h followed by heat treatment at 600 °C for 1 h. Epitaxial regions as large as 20 μm in size were observed. CrGe was the first refractory germanide grown epitaxially on germanium. The quality of epitaxy is also unsurpassed by any metal germanide epitaxy achieved to date. The growth of a number of epitaxial germanides on germanium with regular atomic arrangements at the interfaces may facilitate the basic understanding of metal-semiconductor interactions as well as enhance the performance of various semiconductor-based devices.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 575-577 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A cross-sectional transmisson electron microscope (XTEM) study of intrinsic solid-phase epitaxial (SPE) growth in self-ion-implanted (001) Si has been carried out. The activation energy of the self-ion-implanted silicon was measured to be 2.6±0.2 eV. The value is remarkably close to those obtained in the two most recent studies by other techniques. The pre-exponential factor is lower than that reported by Lietoila et al. [J. Appl. Phys. 53, 4399 (1982)] annealed under similar conditions. The variation in proximity to the surface and difference in the distribution of the microstructural defects in the two studies are suggested to be possible causes for the discrepancy. The advantages of utilizing the XTEM technique to study epitaxial growth of self-ion-implanted amorphous thin films are demonstrated. The accuracy in the XTEM measurement of the SPE regrowth rate in Si+-implanted (001) Si is discussed.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1177-1181 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A combined plan-view and cross-sectional transmission electron microscope study has been carried out to investigate the interfacial reactions in platinum thin films on germanium. Pt2Ge, PtGe, Pt2Ge3, and PtGe2 were found to form at 160, 250, 350, and 400 °C, respectively. Definite orientation relationships were observed between those of Pt2Ge, PtGe, and PtGe2 and (111)Ge. No epitaxial growth of platinum germanides on (001)Ge was observed. The results were found to be partially different from those obtained in a previous investigation. The discrepancy is attributed to different substrate cleaning schemes prior to the metal film depositions in the two studies. It appears that the growth of platinum germanide epitaxy on (111)Ge is not directly correlated with the lattice matches at germanide/Ge interfaces at room temperature.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...