ISSN:
1432-0630
Keywords:
81.60
;
82.65
;
42.60
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Laser-induced chemical etching of single-crystalline (100) Si in Cl2 atmosphere has been investigated for continuous Ar+ and Kr+ laser irradiation at around 351 nm, and at 457.9, 488.0, 514.5, and 647.1 nm. For laser irradiances below 105 W/cm2 the etching mechanism is non-thermal, and is based on photo-generated electron-hole pairs within the Si surface and Cl atoms produced within the gas phase. The experimental results are compared with model calculations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617934
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