Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
63 (1988), S. 2637-2640
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The Si-SiO2 interface was studied by reflection electron microscopy (REM) in two situations: (1) through a partially etched oxide film, and (2) after removal of the oxide. We also used high-resolution cross-sectional transmission electron microscopy (HR-XTEM). A roughness of 5.0–15.0 nm in height and 0.7–2.0 μm in width could be resolved through the 2.0-nm oxide film, and the same roughness could be resolved after the oxide was removed. It was made clear that step intervals less than 50.0 nm cannot be resolved by REM, because of the lowering of the resolution due to the foreshortening. It is believed that the fringelike pattern observed after the oxide was removed reflects small steps, but they are not an accurate reflection of the steps at the interface, as observed by HR-XTEM. REM after removal of the oxide has been confirmed as being an effective means of observing the Si-SiO2 interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341002
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