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  • American Institute of Physics (AIP)  (17)
  • International Union of Crystallography (IUCr)
  • 1990-1994
  • 1985-1989  (18)
  • 1988  (18)
  • 1
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of InSb on silicon by metalorganic magnetron sputtering (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 51-53 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial films of InSb have been deposited by metalorganic magnetron sputtering (MOMS) on 〈100〉 silicon substrates using molecular beam epitaxy (MBE) GaAs buffer layers. X-ray diffraction and cross-sectional transmission electron microscopy measurements indicate the epilayers to be structurally similar to layers deposited by MOMS and MBE on high quality GaAs substrates, despite the increased defect density of the GaAs buffer layer. Some of the defects within the buffer layer propagate into the InSb epilayer; however, the majority of defects arise from the lattice mismatch at the interfacial region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100123
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  • 2
    Electronic Resource
    Electronic Resource
    GaAs device passivation using sputtered silicon nitride (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1638-1640 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes the passivation of GaAs field-effect transistors (FET's) using sputtered silicon nitride films. A low-power reactive sputtering process for silicon nitride film deposition was developed and applied to both metal-semiconductor FET (MESFET) and high electron mobility transistor (HEMT) passivation. It is shown that the shifts in the FET parameters such as threshold voltage, breakdown voltage, and transconductance, after nitride deposition, depend not only on the stress states of the nitride films but also on the surface composition and recess geometry of the passivated surfaces. With proper deposition parameters, the sputtered silicon nitride film can be successfully used for both MESFET and HEMT passivation with only minor degradation (less than 10%) of the device performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100402
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  • 3
    Electronic Resource
    Electronic Resource
    Y-Ba-Cu-O superconducting film on oxidized silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1987-1988 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report thick superconducting films of Y-Ba-Cu-O on oxidized silicon substrates. The critical temperatures for onset and zero resistance are 96 and 77 K, respectively. X-ray diffraction analysis predicts 1, 2, 3 composition and orthorhombic phase of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99743
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature hysteresis and relaxation effects in amorphous Fe-Ni-Zr alloys (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3398-3398 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Fe-Ni-Zr alloys in the "as quenched'' and irradiated state have been studied with 57Fe Mössbauer spectroscopy and ac and dc susceptibility. Samples were irradiated by 14-MeV neutrons at room temperature to fluences of ≈1017 ns/cm2 corresponding to a dpa of 3×10−4 at the Lawrence Livermore National Laboratory RTNS-II facility. Two samples (Fe89.7Ni0.3Zr10 and Fe70Ni20Zr10) "as quenched'' and irradiated, have been studied between room temperature and ≈4 K. ac susceptibility shows reentrant magnetic behavior for both alloys. Temperature hysteresis (no applied fields) is observed initially in the Mössbauer spectra for both alloys, "as quenched'' and irradiated. It decreases and virtually disappears after a few thermal cycles between 20 K and room temperature. Relaxation effects are present in the magnetic hyperfine spectra of both alloys, "as quenched'' and irradiated. The usually assumed proportionality between the magnetic hyperfine splitting and the magnetization is probably not valid for these alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340772
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic properties of Co-B-C amorphous alloys melt-quenched beyond the eutectic regime (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3397-3397 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is very difficult to prepare a homogeneous amorphous phase of transition-metal carbon alloys by rapid quenching. However, an additional element like Cr, Mo, or W remarkably enhances the glass formation in the ternary system. Similarly with B as additional element amorphous ductile alloys containing as much as 70% metalloids (B+C) have been recently shown to be obtainable by melt quenching to produce materials with remarkable mechanical and electronic properties. The possibility that amorphous alloys with such a large concentration of metalloids which extends to beyond the eutectic regime can be obtained by melt-spinning requires modification of previous general concepts of glass forming tendency as well as amorphous structure. In this paper we present thermal, magnetic and electronic property studies of yet another system, i.e., Co-B-C containing metalloids in the range 28–44 at. %. Boron is thought to have a rather strong attractive interaction against C which results in the formation of an amorphous phase over an extended regime. We have studied systematically both the series Co76−xB24Cx as well as Co88−yByC12 to determine the composition range for the most stable amorphous range. B and C are found to enhance considerably the glass formation. The electrical resistivity is found to increase with boron concentration and reaches values close to 450 μΩ cm and yet have a positive temperature coefficient (∼0.2×10−4 Ω mK−1 for metalloid content as high as 44 at. %) indicating a metallic behavior. No indication of electron-electron correlation effects are observed at low temperatures. From the temperature dependence of Hall effect and thermomagnetic data all the alloys studied are found to be ferromagnetic. We obtain a preliminary magnetic phase diagram from which it is found that the concentration dependence of Tc obeys a (x−x0)1/2 behavior in both the series with x0=54 at. % Co at which ferromagnetism disappears. Such a concentration dependence cannot be explained on the basis of simple dilution phenomenon. Detailed studies on the effect of B and C on magnetic properties will also be presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340796
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic susceptibility of sintered and powdered Y-Ba-Cu-O (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 980-983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real and imaginary parts of ac susceptibility of a sintered Y1Ba2Cu3O7−δ superconductor were measured before and after powdering. The temperature-dependent susceptibility may be separated into two contributions, one sensitive and the other relatively insensitive to the magnitude of the measuring field. The former is partially suppressed by coarsely crushing the sample. It is completely suppressed after finely powdering, whereupon the susceptibility curves become insensitive to the magnitude of the measuring field. Several models apparently consistent with the results are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340050
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  • 7
    Electronic Resource
    Electronic Resource
    Light-ion-bombarded p-type In0.53Ga0.47As (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4755-4759 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple-energy H-, He-, and B-ion bombardments were performed to obtain uniform high resistivity over the entire thickness of p-type In0.53Ga0.47As. High resistivity, 580 Ω cm, which is close to the intrinsic resistivity limit of ≈103 Ω cm in InGaAs, is observed. The thermal stability of the high-resistance layers depended upon the mass of the implanted ion. The B-ion-implanted layers maintained high resistivity up to ≈200 °C. Photoluminesence measurements were used to obtain the energy of compensating levels produced by light-ion bombardment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341191
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  • 8
    Electronic Resource
    Electronic Resource
    Effective second-order elastic constants of a strained cubic crystal in the finite strain theory (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3320-3322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Expressions for the effective second-order elastic constants of a strained cubic crystal have been obtained using the finite strain theory of Murnaghan, in terms of the higher-order elastic constants of its natural state. These formulae are found to be different from those obtained by the earlier workers. These expressions are used to obtain the pressure derivatives of the effective second-order elastic constants of some cubic crystals for which experimental second- and third-order elastic constants are available. The second-order anharmonic contribution to the pressure derivatives of C111 and C112 of copper, silver, and gold is calculated from a knowledge of the estimated values of the fourth-order elastic constants of these metals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341511
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  • 9
    Electronic Resource
    Electronic Resource
    Deep radiative levels in as-grown and implanted rapid thermal annealed InP (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2426-2433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep radiative levels in as-grown and Si-, Be-, and Hg-implanted InP:Fe activated by rapid thermal annealing are studied by photoluminescence measurements. A broadband centered at 1.07 eV is observed in unimplanted InP:Fe. The 1.17- and 0.775-eV peaks in the spectra of Si-implanted InP:Fe, and the 0.861-eV peak in the spectra of Be-implanted InP:Fe are believed to be due to the dopant-defect complexes. In Hg-implanted samples HgIn acceptor related peak is observed at 1.329 eV with longitudinal optical phonon peaks at 1.286 (1-LO) and 1.244 eV (2-LO). A peak at 0.919 eV is observed as an intrinsic peak in all InP samples. A single peak or several peaks with shoulders are also observed in the range 0.65–0.725 eV in many InP samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341677
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  • 10
    Electronic Resource
    Electronic Resource
    ac magnetic susceptibility of YBa2Cu3O7−x (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2533-2536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ac and dc magnetic susceptibilities were studied for relatively dense single-phase YBa2Cu3O7−x samples. The data are discussed in terms of sample defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341637
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