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  • American Institute of Physics (AIP)  (5)
  • Periodicals Archive Online (PAO)
  • 1985-1989  (5)
  • 1987  (5)
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 1146-1158 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The results of numerical investigations based on series analysis indicate clearly that the method of phantom fields constructs nontrivial, self-interacting scalar Euclidean boson field theories. It is found that these continuum theories arise as the scaling limit to normal critical points of lattice statistical mechanical models. The character of these theories is numerically indistinguishable from that of a classical theory on the lambda line near the tricritical point.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 305-307 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new tip for scanning tunneling microscopy and a tip repair procedure that allows one to reproducibly obtain atomic images of highly oriented pyrolytic graphite with previously inoperable tips. The tips are shown to be relatively oxide-free and highly resistant to oxidation. The tips are fabricated with graphite by two distinct methods.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 172-174 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional transmission electron microscopy has been used to study the recrystallization behavior of a buried amorphous layer in 3 MeV Si+-implanted (100) silicon at a dose of 5×1015 cm−2. The lower (deeper) amorphous/crystalline (a/c) interface is found to be more abrupt compared to the upper (closer to the surface) a/c interface. During recrystallization similar rates of advancement of the two a/c interfaces are observed. V-shaped dislocations are observed in the completely recrystallized layer. The defect density in the upper recrystallized region is found to be higher than that in the lower recrystallized region. These observations are correlated with the shape of the damage profile. The secondary defects grown at higher temperatures (〉750 °C) are found to be very stable and difficult to anneal out. The overall recrystallization behavior of the buried amorphous layer is found to be similar to that of lower energy implants.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2763-2770 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have designed, built, and tested a pulsed gas-injection coaxial plasma gun driven by a 72-μF capacitor bank, with operating voltages of 60–80 kV (stored energy 130–230 kJ), and 1.6-MA, 1-μs rise-time current discharges. Using deuterium gas, we have obtained reliable delivery of all current to the gas and neutron yields of greater than 109. Current, voltage, inductance, and current position data are discussed and are compared with circuit solver models. Magnetic-probe and filtered scintillator photomultiplier detector array data on high-energy photon spectra were taken. A second puff-gas valve near the anode (inner electrode) axis at the muzzle end substantially improved the neutron yield.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 2586-2587 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hill notes that the calculated energy loss rate for a lightning channel found in the original paper [Phys. Fluids 29, 2736 (1986)] is significantly smaller than the rate he obtained. This is explained primarily by his much smaller electrical conductivity. The value obtained in the original paper is justified and other features of the results are clarified.
    Type of Medium: Electronic Resource
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