ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The deposition of hydrogenated amorphous silicon by biased activated evaporation is described. The films are characterized by measurements of hydrogen content, conductivity and photoconductivity against temperature for intrinsic, n-type and p-type films, optical absorption, field-effect mobility and density of states, space-charge limited currents, and spin density. Silicon nitride and silicon carbide films are also described. It is concluded that the process offers high-rate deposition of films whose quality is comparable with glow-discharge films but with better thermal stability and no illumination-induced conductivity changes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.338212
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