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  • American Institute of Physics (AIP)  (14)
  • 1985-1989  (14)
  • 1986  (14)
  • 1
    Electronic Resource
    Electronic Resource
    Oxygen doping in close-spaced-sublimed CdTe thin films for photovoltaic cells (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3607-3609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient CdTe/CdS thin film solar cells have been the recent focus, in which the CdTe layers were reported by close-spaced sublimation, and oxygen was used to control the p-type conductivity of the deposited films. Both the fundamental gap and the impurity level were determined by the wavelength modulation reflectance spectroscopy, which demonstrates that while oxygen atoms have an ionization energy of about 0.1 eV, they do not behave as a simple shallow acceptor. This finding is supported by the electrical characterization. The oxygen concentration incorporated in the CdTe thin films were found to be in the range of 1019–1020 cm−3 by the IR measurements, while a carrier concentration between 1010 and 1012 cm−3 was obtained by Hall measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336792
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of hydrogen chloride during oxidation of silicon on trap generation by avalanche electron injection (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1391-1398 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of HCl on trap generation in silicon dioxide layers at high electric fields are reported by comparing 700-A(ring), 200-A(ring), 9% HCl, and 0% HCl dry oxides stressed at constant avalanche electron injection currents and voltages. Experimental data indicate that HCl decreases the hydrogenation rate of boron acceptor in the silicon surface layer due to a high-density chlorine layer at the oxide/silicon interface but HCl increases the density of the peaked interface trap at 0.3 eV above the silicon midgap. A new chlorine-related positively charged electron trap in the oxide is observed and isolated from the chlorine-independent negatively charged oxide hole trap. Chlorine also reduces the density of the smaller cross-section oxide electron trap which gives the turn-around phenomena.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337316
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  • 3
    Electronic Resource
    Electronic Resource
    A new analytical technique of photoluminescence for optimization of organometallic chemical vapor deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3781-3784 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical method for quantitative interpretation of GaAs photoluminescence spectra was developed. Because of various transition mechanisms the photoluminescence spectrum of a sample may vary significantly under different measurement conditions. Based on a proposed scheme of transition priorities, spectra taken at various excitation powers were analyzed. Comparing results of undoped GaAs epitaxial layers grown by organometallic chemical vapor deposition under similar conditions but different V/III ratios, an optimum ratio corresponding to a minimum number of shallow impurities was clearly identified. Carbon and zinc were found to be the major shallow acceptors in most samples. At very low V/III ratios, carbon was the most dominant acceptor. The carbon concentration diminishes with an increasing ratio and the amount of zinc becomes more significant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337543
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  • 4
    Electronic Resource
    Electronic Resource
    Capture-emission process in double Poole–Frenkel well traps: Theory and experiments (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1042-1045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field-dependent capture-emission process has been studied for double Poole–Frenkel well traps compared with that of single Poole–Frenkel well trap. The emission rate increases with increasing field strength for a single trap. However, for a double trap, it increases to a maximum then decreases with further increasing field due to the barrier lowering and interstate interactions between these two wells. Experimental capacitance deep-level transient spectroscopic data of GaAs samples grown by molecular-beam epitaxy show that when there is a delay in the capacitance transient then there always appear two levels, namely, 0.4 and 0.5 eV. In addition, for both levels, the emission rate increases first to a maximum and then decreases with increasing electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337395
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  • 5
    Electronic Resource
    Electronic Resource
    Study of CuInS2 grown by the traveling-heater method by electrolyte electroreflectance (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2538-2540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the electrolyte electroreflectance spectra of CuInS2 grown by the traveling-heater method has been made. The energy gaps and broadening parameters were studied by varying the composition of the samples. Our results show that the energy gaps are in the range of 1.52 to 1.53 eV and have band-gap narrowing as the deviation from the stoichiometry increases, while the broadening parameters are in the range of 0.040 to 0.060 eV and found to be sensitive to the crystallization of the single crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337002
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  • 6
    Electronic Resource
    Electronic Resource
    Doping studies of Ga0.5In0.5P organometallic vapor-phase epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 395-398 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped Ga0.5In0.5P has been successfully grown by organometallic vapor-phase epitaxy on GaAs substrates with a free-electron concentration of 1016 cm−3 and a mobility of 1050 cm2/V s in nominally undoped material. The distribution coefficient of indium in the growth of Ga0.5In0.5P is nearly to unity. Both n- and p-type carrier concentrations of up to 1019 cm−3 have been obtained in the present study. Diethyltelluride and silane are used as n-type dopants. Dimethylzinc is used as the p-type dopant. Te is a very efficient dopant with a distribution coefficient kTe=54. The photoluminescence (PL) intensity increases with Te doping level to a maximum at n=2×1018 cm−3. The silicon distribution coefficient is temperature dependent, due to the incomplete pyrolysis of silane at the growth temperature. Si-doped Ga0.5In0.5P has a lower PL efficiency than Te-doped samples and is not strongly correlated with carrier concentration. The incorporation efficiency of Zn is low, with kZn =3.8×10−3, due to the high vapor pressure of Zn at the growth temperature. The PL intensity of Zn-doped Ga0.5In0.5P also increases with Zn doping level to a maximum at p=2×1018 cm−3 and is comparable to the optimum Te-doped n-type Ga0.5In0.5P. Only a single band-edge PL peak is observed in all cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336642
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  • 7
    Electronic Resource
    Electronic Resource
    Hydrogenation and annealing kinetics in boron- and aluminum-doped silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1422-1429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenation kinetics of the aluminum and boron acceptors in oxidized silicon have been obtained during constant current avalanche electron injection stress in contrast to constant voltage stress reported previously by us. The annealing kinetics have been measured at eight new temperatures for Al-doped metal–oxide–semiconductor capacitors over the range 120–205 °C. Four phases were observed during the thermal activation of the aluminum acceptor. The first phase consisted of an initial drop of the hole concentration. Phase two was associated with the first-order hydrogen-acceptor bond-breaking reaction. The last two phases were attributed to the second-order kinetics of the hydrogen molecule formation and breakup reaction. The thermal activation energy for the aluminum acceptor was 1.6 eV in contrast to our previous 2.2 eV based on fewer (three) annealing temperatures, giving more firmly the chemical trend, B(1.1 eV)〈Al(1.6 eV)〈Ga(2.2 eV).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337320
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  • 8
    Electronic Resource
    Electronic Resource
    Thermally induced crystallization of amorphous-titania films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3475-3480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three types of amorphous-titania films prepared by ion- and electron-beam techniques have been annealed thermally. An amorphous-crystalline transformation is found in each of these film types at around 350 °C. Its resulting microcrystalline structure and the exact transition temperature appear to be dictated by the rutile microcrystalline seed present in the as-deposited films under different deposition conditions. An amorphous film with a weak rutile seed crystallizes at a lower temperature into the anatase structure, while a film with a relatively strong rutile base crystallizes into the rutile structure at a somewhat higher temperature. It is demonstrated that Raman spectroscopy is a simple and effective tool for characterization of these submicron-thick amorphous films and for the dynamical study of such a phase transformation. Accompanying this amorphous-crystalline transformation, a two-order increase in elastic light scattering is noted implying optical degradation associated with microcrystalline boundaries. In addition, results of the anatase–rutile transformation at a temperature near 900 °C are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336817
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  • 9
    Electronic Resource
    Electronic Resource
    An instrument for measuring turbulent pressure fluctuations (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 666-673 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An instrument is described for laboratory measurements of the fluctuating static pressure in the turbulent boundary layer above progressive water waves. It consists of a disk-shaped sensing head properly designed to minimize the dynamic pressure variation to an acceptable level, a commercially available piezocrystal transducer housed inside a casing, and a forward-bent connecting tube. Pressure fluctuations sampled by the disk are converted into an electrical signal by the piezocrystal transducer. Through low-pass filtering, only the frequency range of interest is retained. The instrument was tested successfully for frequency response, dynamic and mechanical noise sensitivity, and response to spurious pressure fluctuations (produced when operating in a Eulerian wave-following mode) inside a cylindrical chamber and in a wind–wave facility, and some sample results along with the calibration procedures and data analysis are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138887
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  • 10
    Electronic Resource
    Electronic Resource
    Apparatus and technique for reconstruction of flaws using model-based elastic wave inverse ultrasonic scattering (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 3089-3098 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An automated multiviewing ultrasonic apparatus and signal processing routine have been developed for utilization in nondestructive evaluation (NDE) of materials. The instrument has been developed to take advantage of recent advances in long and intermediate wavelength inverse scattering of elastic waves, and provides a 3-D reconstruction of a flaw. Although the reconstruction obtained does not contain fine details of the flaw's structure, it provides sufficient information about the flaw (size, orientation, and selected materials properties) so that failure-predictive decisions can be made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139211
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