Electronic Resource
Springer
Russian physics journal
28 (1985), S. 1018-1022
ISSN:
1573-9228
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The effect of temperature change on stability of electrical characteristics of GaAs and GaSb tunnel diodes is studied. It is shown that thermal stresses developed at the boundary between the electrode alloy and the semiconductor lead to deformations (plastic and creep), localized mainly in the electrode layer. These deformations are sensed by the p-n junction which lies close to the phase boundary, which leads to a relaxation of peak current, and its hysteresis-type temperature dependence.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00899097
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