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  • Wiley-Blackwell  (40)
  • American Institute of Physics (AIP)  (23)
  • 1995-1999  (46)
  • 1985-1989  (17)
  • 1998  (46)
  • 1985  (17)
  • 1
    Electronic Resource
    Electronic Resource
    Synthesis of Homo- and Hetero-Bimetallic Complexes Containing the Ni(C6F5)2 Moiety - Crystal Structure of [(C6F5)2Ni(μ-SPh)2Pd(dppe)] (1998)
    Weinheim : Wiley-Blackwell
    Berichte der deutschen chemischen Gesellschaft 1998 (1998), S. 1199-1204 
    Details
    ISSN: 1434-1948
    Keywords: Organometallic compounds ; Nickel complexes ; Crystal structures ; Chemistry ; General Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The compound cis-[Ni(C6F5)2(PhCN)2] has been used as the starting material for the preparation of the bimetallic complexes [(C6F5)2Ni(μ-X)2Ni(C6F5)2]2- (X = SCN, OCN, N3), [(C6F5)2Ni(μ-SCN)2Pd(C6F5)2]2-, [(C6F5)2Ni(μ-NCS)2Pd-(dppe)] [dppe = 1,2-bis(diphenylphosphanyl)ethane], and the trimetallic[(C6F5)2Ni(μ-NCS)2Pd(μ-SCN)2Ni(C6F5)2]2-. The mononuclear compounds [(C6F5)2NiLX] (L = PPh3, P(C6H4MeO-p)3; X = SCN, OCN) are obtained by reaction between [(C6F5)2Ni(&μ-X)2Ni-(C6F5)2]2- and L. The treatment of cis-[Ni(C6F5)2(PhCN)2] with [M(SAr)2(dppe)] leads to the formation of the arylthiolate complexes [(C6F5)2Ni(μ-SAr)2M(dppe)] (Ar = Ph, C6H4Me-p, C6H4NO2-p; M = Ni, Pd, Pt). The X-ray diffraction study of [(C6F5)2Ni(μ-SPh)2Pd(dppe)] shows that both metal atoms, Ni and Pd, are coordinated in a slightly distorted square-planar geometry and the μ-thiolato groups are in the syn conformation.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Momentum–space structure of relativistic runaway electrons (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 2370-2377 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of relativistic runaway electrons in tokamak plasmas is analyzed using a test particle description that includes acceleration in the toroidal electric field, collisions with the plasma particles, and deceleration due to synchrotron radiation losses. The region of momentum space in which electron runaway takes place is determined. It is found that relativistic and synchrotron radiation effects lead to a critical electric field ER〉(kTe/mec2)ED, below which no runaways are generated. In addition, the trajectories of the test electrons in momentum space show a stable equilibrium point that sets a limit on the energy that the runaway electrons can reach. Analytical expressions are given for this energy limit as a function of the toroidal electric field and plasma parameters. The dominant radiative mechanisms limiting the runaway electron energy are identified in the whole range of electric field values. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872911
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  • 3
    Electronic Resource
    Electronic Resource
    Analytic model for the dynamics of fast ignition (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 2721-2726 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A relatively simple model for the dynamics of fast ignitors is presented. The model describes the processes taking place when a precompressed fuel is heated by a particle beam (ions or electrons) characterized by its range R, and the focal spot and intensity of the beam. As a result, the ignition conditions are calculated in terms of such parameters and of the fuel density. The model provides scaling laws for the ignition energy and for the beam intensity in which the dependence on the particles range is included. Besides, it gives a simple interpretation of reported simulations and explains the apparent discrepancies between them and previous analytic estimations. The importance of using particles with R≤0.3 g/cm2 turns out to be from the dependence of the ignition energy and the target gain on the range. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872960
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  • 4
    Electronic Resource
    Electronic Resource
    Optimum particle range for triggering fast ignition (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 4373-4376 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytic model for the dynamics of fast ignition is developed for the case in which the particle beam heats the fuel by generating a supersonic heat wave. It shows that the beam energy and intensity required for ignition increase with the particle range R. These results, together with previous ones for the subsonic regime of heating, allow for the determination of an optimum particle range value (R(approximate)0.25 g/cm2). By decreasing the range below this value the ignition energy no longer decreases. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873174
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  • 5
    Electronic Resource
    Electronic Resource
    Effective thermal diffusivity of layered materials measured by modulated photothermal techniques (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3031-3041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulated photothermal techniques provide useful methods based on linear relations to measure the thermal diffusivity of homogeneous materials. We have analyzed theoretically the applicability of such linear relations to two particular cases of layered composites, i.e., two-layer materials and superlattices. In order to measure the through-thickness and in-plane thermal diffusivities of these anisotropic materials, planar and pointlike excitations have been studied. The main result of this article is that the linear relations encountered for homogeneous materials still hold for layered composites, although their slopes do not always give the effective thermal diffusivities of the sample parallel and perpendicular to the layers, as derived from the in-parallel and in-series thermal resistors models, respectively. However, an "apparent" thermal diffusivity is obtained from which the thermal parameters of each layer can be retrieved. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368457
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  • 6
    Electronic Resource
    Electronic Resource
    Metal–insulator transition in SrRuO3 induced by ion irradiation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3375-3377 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of He+ irradiation on the electrical resistivity and Curie temperature of ferromagnetic SrRuO3 thin films. An evolution from metallic to insulating behavior is observed when He+ ion fluence is increased, suggesting a metal–insulator transition. Damage by ion irradiation produces a strong decrease of the Curie temperature. On the other hand, no significant change in Tc (∼160 K) takes place in fresh samples grown at different substrate temperatures. We discuss the possible correlation between structural changes induced by irradiation, which reflect in an increase of the pseudocubic lattice parameter, and the observed depression of Tc.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122772
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  • 7
    Electronic Resource
    Electronic Resource
    Surface defect scattering of surface plasmon polaritons: Mirrors and light emitters (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3509-3511 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the near-field and the angular distribution of radiation resulting from the scattering of surface plasmon polaritons from a surface defect by means of numerical calculations based on the use of the impedance boundary condition. Maximum reflection (plasmon mirrors) is found for half widths on the order of the inverse of the surface plasmon wavevector, either protuberances or indentations, as predicted by a perturbation-theoretic argument. Maximum radiation (light emitters) occurs for wider protuberances, with coupling efficiencies beyond 80%. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122820
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  • 8
    Electronic Resource
    Electronic Resource
    X-ray absorption spectroscopy and atomic force microscopy study of bias-enhanced nucleation of diamond films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2105-2107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bias-enhanced nucleation of diamond on Si(100) has been studied by x-ray absorption near-edge spectroscopy (XANES) and atomic force microscopy, two techniques well suited to characterize nanometric crystallites. Diamond nuclei of ∼15 nm are formed after 5 min of bias-enhanced treatment. The number of nuclei and its size increases with the time of application of the bias voltage. A nanocrystalline diamond film is attained after 20 min of bias-enhanced nucleation. At the initial nucleation stages, the Si substrate appears covered with diamond crystallites and graphite, without SiC being detected by XANES. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121290
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  • 9
    Electronic Resource
    Electronic Resource
    Surface plasmons and breakdown in thin silicon dioxide films on silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1430-1438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anode hole injection model is based on a surface plasmon model in which the positive charge is generated by hole injection from the anode, where it is generated via a surface plasmon mechanism resulting finally in oxide breakdown. Attempts to detect the surface plasmons can rely only on indirect observations, such as electron-energy loss, the radiative decay of the surface plasmons, or d2I/dV2 measurements. These measurements show that the emission of surface plasmons is both a strong energy-loss mechanism and an electron-hole pair generation mechanism, particularly in poly-Si/SiO2 or poly-Si/vacuum interfaces. Calculation of the surface plasmon excitation threshold energy is shown to decrease with increasing temperature and is also confirmed by experiments. Thus, the positive charge density increases and the charge to breakdown decreases with increasing temperature. We have also measured and observed the surface plasmon excitation threshold energy at the poly-Si/SiO2 interface from the electron energy loss spectrum for the first time. The surface plasmon mechanism explains the oxide thickness and gate thickness dependence of the positive charge density and temperature dependence of the charge to breakdown. The calculated electron threshold energy to generate a positive oxide charge by the surface plasmon mechanism is EC–Si+2.24 eV. Also, the origin of substrate hole current can be explained by this proposed mechanism. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that explains measured observations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368178
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  • 10
    Electronic Resource
    Electronic Resource
    Tin-related double acceptors in gallium selenide single crystals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4750-4755 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium selenide single crystals doped with different amounts of tin are studied through resistivity and Hall effect measurements in the temperature range from 30 to 700 K. At low doping concentration tin is shown to behave as a double acceptor impurity in gallium selenide with ionization energies of 155 and 310 meV. At higher doping concentration tin also introduces deep donor levels, but the material remains p-type in the whole studied range of tin doping concentrations. The deep character of donors in gallium selenide is discussed by comparison of its conduction band structure to that of indium selenide under pressure. The double acceptor center is proposed to be a tin atom in interlayer position, with a local configuration that is similar to that of tin diselenide. The hole mobility exhibits an anomalous dependence on the tin content, attaining its maximum value in the ingot with 0.2% nominal tin content. This is proposed to be related to impurity pairing effects giving rise to thermal shallow acceptors with low ionization energy and low carrier scattering cross section, making the hole mobility to be controlled by phonon scattering mechanisms even for relatively high impurity content. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367264
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