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  • Wiley-Blackwell  (60)
  • American Institute of Physics (AIP)  (32)
  • International Union of Crystallography (IUCr)
  • 1990-1994
  • 1985-1989  (96)
  • 1988  (42)
  • 1985  (54)
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Erscheinungszeitraum
  • 1990-1994
  • 1985-1989  (96)
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 36 (1988), S. 1517-1524 
    ISSN: 0021-8995
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: Kinetic studies were carried out on the reaction between ethylenediamine and dimeric fatty acids in melt phase. The reaction was performed at 124, 130, 145, 160, 174, and 190°C and followed by determining the acid value of the product. The polyamidation reaction was found to be of overall second order with an activation energy of 18.2 kcal/g mol up to 90% conversion and of overall third order with an activation energy of 16.4 kcal/g mol above 90% conversion.
    Zusätzliches Material: 5 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 39 (1988), S. 135-142 
    ISSN: 0947-5117
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Maschinenbau
    Beschreibung / Inhaltsverzeichnis: Einfluß des Deltaferritgehalts auf die Korrosionsbeständigkeit von mit Stahl 316 plattierten MetallenAustenitische Plattierungen mit Stahl 316 wurden durch Schutzgas-Metall-Lichtbogenschweißen und Unterpulverschweißen mit Elektroden aus 316 L auf niedrig gekohltem Kesselblech (SA 515 Gr 60) hergestellt, wobei Stahl 309 L als Sperrschicht mittels Unterpulverschwei-ßen aufgebracht wurde. Der Wärmeeintrag beim Schweißen wurde variiert, um in der Plattierung unterschiedliche Ferritgehalte einzustellen. Die plattierten Proben wurden nach dem Schweißen wärmebehandelt (650°C, 50 und 200 h). Die oberste Plattierungsschicht wurde abgetragen und die Proben anschließend auf Anfälligkeit für interkristalline Korrosion untersucht (ASTM A-262-75, A, B, C und E, d.h. 10% Oxalsäure, elektrolytisch, Eisensulfat + 50% ige Schwefelsäure; 65%ige Salpetersäure; Kupfer/Kupfersulfat -16%ige Schwefelsäure); außerdem wurde auch ein ätzversuch bei kontrolliertem Potential durchgefüuhrt.Die Untersuchung hat gezeigt, daß der Ferritgehalt der Plattierung mit zunehmender Stromstärke abnimmt. Der Anteil des umgewandelten Ferrits nach der Wärmebehandlung nach dem Schweißen war in den Plattierungen mit niedrigem Wärmeeintrag und hohem Ferritgehalt etwas erhöht. Die Wärmebehandlung im Anschluß an das Schweißen führte zum Sprödbruch von Plattierungen mit hohem Ferritgehalt (〉 als 10%).Der Korrosionsangriff des Ferrits ist abhängig vom jeweiligen Medium: 65% ige Schwefelsäure treibt den Ferrit bevorzugt an, während in Eisensulfat-Schwefelsäure der Ferrit intakt bleibt, der Austenit hingegen angegriffen wird. Keine der untersuchten Proben war im unbehandelten Plattierungszustand oder nach Wärmebehandlung anfällig für interkristalline Korrosion in Kupfer/Kupfersulfat -16% Schwefelsäure. Proben mit niedrigem Ferritgehalt (3,55%), die nach dem Schweißen wärmebehandelt wurde, wiesen an der Grenzfläche zwischen zwei benachbarten Schichten Korngrenzenausscheidungen auf. Im allgemeinen hat sich der Ferrit als günstig für das Korrosions-verhalten von plattierten Metallen nach Wärmebehandlung erwiesen. Der Wärmeeintrag im untersuchten Bereich führte zu keiner wesentlichen Beeinflussung der Korrosionsgeschwindigkeit.
    Notizen: Austenitic claddings of type 316 were obtained by SMAW (Shielded Metal Arc Welding) and SAW (Submerged Arc Welding) processes, using type 316 L electrodes on low carbon boiler steel (SA 515 Gr 60) with type 309 L as a barrier layer deposited by the SAW process. Welding heat input was changed in order to obtain different ferrite contents in the cladding. The clad samples were post-weld heat treated at 650°C for 50 and 200 h. The top layer of the cladding was removed and the specimens were then subjected to intergranular corrosion tests (ASTM A-262-75, practices A, B, C and E, viz. 10% oxalic acid electrolytic etch; ferric sulfate -50% sulfuric acid; 65% nitric acid and copper-copper sulfate -16% sulfuric acid tests) and controlled potential etching test.The study indicated that the ferrite content of the cladding decreases with increasing current. Ferrite transformed after PWHT (post weld heat treatment) was relatively more in claddings obtained with low heat input and containing high ferrite content in the as-clad condition. PWHT led to brittle fracture of high ferrite claddings (above 10 FN).The corrosion attack of ferrite was found to depend on environment. 65% nitric acid attacked ferrite preferentially, whereas in acid-ferric sulfate, ferrite was intact and austenite was attacked. No sample exhibited susceptibility to intergranular corrosion in the as-clad or PWHT conditions in the copper-copper sulfate -16% acid test. However, PWHT specimens with low ferrite contents (3.55 FN) exhibited grain boundary precipitation at the interface of two adjacent layers. In general, ferrite was found to be beneficial in controlling corrosion rates of clad metals after PWHT. Heat input, within the range studied, did not affect the corrosion rates significantly.
    Zusätzliches Material: 11 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    ISSN: 0044-8249
    Schlagwort(e): Chemistry ; General Chemistry
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie
    Zusätzliches Material: 1 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Weinheim : Wiley-Blackwell
    Angewandte Chemie International Edition in English 24 (1985), S. 61-62 
    ISSN: 0570-0833
    Schlagwort(e): Chemistry ; General Chemistry
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5095-5097 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The pressure deriviatives of the bulk, shear and Young's moduli, and of Poisson's ratio of a number of polycrystalline metals have been calculated using Hill's approximation. The pressure derivatives of the second-order elastic constants of the corresponding single-crystal hexagonal metals have been used for this purpose.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 333-337 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Fe and Cr doping of liquid-phase epitaxial In0.53Ga0.47As grown at 650 °C on InP substrates have been investigated. Varying amounts of high-purity Fe and Cr have been added to the growth melt. The resistivity of Fe-doped layers increases with increase of Fe added to the melt, and layers with ND−NA as low as 2.0×1012 cm−3 can be grown consistently. From analysis of temperature-dependent Hall data on conducting Fe-doped samples, the Fe acceptor ionization energy is found to be 0.46 eV. No additional feature is seen in the 4 K band-edge photoluminescence spectra of Fe-doped layers. Cr doping seems to produce donorlike behavior and the electron concentration increases monotonically with increased addition of Cr to the melt. An additional peak, separated from the band-gap energy by 24 meV is seen in the photoluminescence spectra of Cr-doped samples. It is believed that Cr itself, or a complex defect involving Cr is responsible for the formation of a donorlike center.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 384-392 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Indium tin oxide films have been grown by rf sputtering at various Ar-O2 mixtures, at low substrate temperatures (200 °C), and deposition rates (25 A(ring)/min), followed by post deposition annealing (at 350 °C) in different ambients (O2, N2, and cracked ammonia). Influence of a reactive gas (oxygen) on the sputtering rate of a metallic (indium/tin) alloy target has been investigated. Growth parameters and annealing conditions have been optimized. The films were characterized by electron and x-ray diffraction, scanning electron microscopy, and transmittance as a function of wavelength. The effect of heat treatment in various environments on the structural, electrical, and optical properties has been investigated. Effect of a new annealing ambient, cracked ammonia (reducing atmosphere), on the reactively sputtered oxide films is being reported for the first time. Cracked ammonia was found to be very effective and cheap and resulted in films of high quality (electrical and optical) with good structural properties. Films with low sheet resistances (Rs=30 Ω/(D'Alembertian) at film thicknesses of 800 A(ring) and Rs=8.5 Ω/(D'Alembertian) at film thicknesses of 5000 A(ring)) with high visible transmission (∼95%) have been achieved by annealing in cracked ammonia.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4742-4745 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Many metal-oxide-semiconductor (MOS) devices rely upon surface passivation for improved performance. An oxide grown in the presence of Cl was evaluated using highly efficient, surface-passivated, photovoltaic cells. The Cl-containing oxide gave increased efficiency, increased stability, and reduced surface-state density. Spectral response, Auger, and secondary ion mass spectrometry (SIMS) data support these conclusions. Preliminary results regarding stoichiometry of the oxide are presented.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 51-53 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Heteroepitaxial films of InSb have been deposited by metalorganic magnetron sputtering (MOMS) on 〈100〉 silicon substrates using molecular beam epitaxy (MBE) GaAs buffer layers. X-ray diffraction and cross-sectional transmission electron microscopy measurements indicate the epilayers to be structurally similar to layers deposited by MOMS and MBE on high quality GaAs substrates, despite the increased defect density of the GaAs buffer layer. Some of the defects within the buffer layer propagate into the InSb epilayer; however, the majority of defects arise from the lattice mismatch at the interfacial region.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1638-1640 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This letter describes the passivation of GaAs field-effect transistors (FET's) using sputtered silicon nitride films. A low-power reactive sputtering process for silicon nitride film deposition was developed and applied to both metal-semiconductor FET (MESFET) and high electron mobility transistor (HEMT) passivation. It is shown that the shifts in the FET parameters such as threshold voltage, breakdown voltage, and transconductance, after nitride deposition, depend not only on the stress states of the nitride films but also on the surface composition and recess geometry of the passivated surfaces. With proper deposition parameters, the sputtered silicon nitride film can be successfully used for both MESFET and HEMT passivation with only minor degradation (less than 10%) of the device performance.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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