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  • ELECTRONICS AND ELECTRICAL ENGINEERING  (34)
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  • 1982  (34)
  • 1
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    Far-infrared imaging antenna arrays (1982)
    In:  Other Sources
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    Publikationsdatum: 2019-06-28
    Beschreibung: A far-infrared monolithic imaging antenna array with diffraction-limited resolution has been demonstrated. The optical system is similar to an oil-immersion microscope, except that the position of the object and the image are interchanged. The array is a series of evaporated silver bow-tie antennas of 75 nm thick, spaced at 310 microns, on a fused-quartz substrate; the bow angle of 60 deg gives an impedance of 150 ohm to match to bismuth microbolometers. The measured responsivity of the array elements is 1-2 V/W at the relatively low bias of 1 mA. Previous measurements have shown that the bolometers are 1/f noise limited up to 100 kHz and that they have a frequency response of 5 MHz. The antenna array should be adequate for far-infrared plasma interferometer measurements.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
    Materialart: Applied Physics Letters; 40; Feb. 1
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  • 2
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    Self-heated thermocouples for far-infrared detection (1982)
    In:  Other Sources
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    Publikationsdatum: 2019-06-28
    Beschreibung: A novel self-heated Bi-Sb thermocouple for far-infrared detection has been developed. The detector is suitable for integration with monolithic antennas and imaging arrays. The device is fabricated in a single photolithography masking step using a photoresist-bridge technique. This bridge technique has also been used to make microbolometers with lower 1/f noise than those made by two conventional masking steps. The thermocouples have a noise equivalent power of 7 x 10 to the -10th W/sq rt of Hz and a 3-dB frequency response of 150 kHz.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
    Materialart: Applied Physics Letters; 41; Sept. 1
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  • 3
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    Single event upset sensitivity of low power Schottky devices (1982)
    In:  Other Sources
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    Publikationsdatum: 2011-08-18
    Beschreibung: Data taken from tests involving heavy ions in the Berkeley 88 in. cyclotron being directed at low power Schottky barrier devices are reported. The tests also included trials in the Harvard cyclotron with 130 MeV protons, and at the U.C. Davis cyclotron using 56 MeV protons. The experiments were performed to study the single event upsets in MSI logic devices containing flip-flops. Results are presented of single-event upsets (SEU) causing functional degradation observed in post-exposure tests of six different devices. The effectiveness of the particles in producing SEUs in logic device functioning was found to be directly proportional to the proton energy. Shielding was determined to offer negligible protection from the particle bombardment. The results are considered significant for the design and fabrication of LS devices for space applications.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 4
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    Annual Conference on Nuclear and Space Radiation Effects, 19th, Las Vegas, NV, July 20-22, 1982, Proceedings (1982)
    In:  Other Sources
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    Publikationsdatum: 2011-08-18
    Beschreibung: The results of research concerning the effects of nuclear and space radiation are presented. Topics discussed include the basic mechanisms of nuclear and space radiation effects, radiation effects in devices, and radiation effects in microcircuits, including studies of radiation-induced paramagnetic defects in MOS structures, silicon solar cell damage from electrical overstress, radiation-induced charge dynamics in dielectrics, and the enhanced radiation effects on submicron narrow-channel NMOS. Also examined are topics in SGEMP/IEMP phenomena, hardness assurance and testing, energy deposition, desometry, and radiation transport, and single event phenomena. Among others, studies are presented concerning the limits to hardening electronic boxes to IEMP coupling, transient radiation screening of silicon devices using backside laser irradiation, the damage equivalence of electrons, protons, and gamma rays in MOS devices, and the single event upset sensitivity of low power Schottky devices.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 5
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    The dependence of single event upset on proton energy /15-590 MeV/ (1982)
    In:  Other Sources
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    Publikationsdatum: 2011-08-18
    Beschreibung: Low earth orbit satellite and Jupiter orbiter probe semiconductor devices may incur soft errors or single event upsets, manifested as bit flips, during exposure to such nuclear particles or heavy ions as trapped protons with energies ranging up to 1000 MeV. Experimental data is given on the average proton fluence needed to cause a bit flip as a function of proton energy for isoplanar bipolar TTL RAMs. Error dependence data shape and threshold energy can be related to the existing body of theoretical data on energy deposition following proton nuclear reactions. Experimental data also show that the relative cross sectional amplitude for functionally identical devices can be related to the device's power consumption.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 6
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    A comparison of radiation damage in transistors from cobalt-60 gamma rays and 2.2 MeV electrons (1982)
    In:  Other Sources
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    Publikationsdatum: 2011-08-18
    Beschreibung: The total ionizing dose response of ten bipolar transistor types has been measured using Co-60 gamma rays and 2.2 MeV electrons from exposure levels of 750, 1500, and 3000 Gy(Si). Gain measurements were made for a range of collector-emitter voltages and collector currents.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
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  • 7
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    The measurement of lightning environmental parameters related to interaction with electronic systems (1982)
    In:  Other Sources
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    Publikationsdatum: 2011-08-18
    Beschreibung: The measurement of electromagnetic fields and related quantities in a lightning environment is a challenging problem, especially at high frequencies and/or in the immediate vicinity of the lightning arcs and corona. This paper reviews the techniques for accomplishing such measurements in these regimes with examples. These sensors are often the same as for the nuclear electromagnetic pulse (EMP), but significant differences also appear.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
    Materialart: IEEE Transactions on Electromagnetic Compatibility; EMC-24; May 1982
    Format: text
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  • 8
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    Life test of 50 AH NiH2 battery (1982)
    In:  Other Sources
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    Publikationsdatum: 2016-06-07
    Beschreibung: Life cycle testing on a battery is reported. The cells were built in 1975, put into battery in 1976, and flown in 1977 in low Earth orbit.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
    Materialart: NASA. Goddard Space Flight Center The 1981 GSFC Battery Workshop; p 487-499
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  • 9
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    NiCd battery cycle life prediction equation for low Earth orbit (1982)
    In:  Other Sources
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    Publikationsdatum: 2016-06-07
    Beschreibung: Cycle life analysis of the nickel cadmium battery is given. The life prediction equation is limited to spacecraft in low Earth orbits.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
    Materialart: NASA. Goddard Space Flight Center The 1981 GSFC Battery Workshop; p 213-222
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  • 10
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    Comparisons of different plate treatment and designs: An update (1982)
    In:  Other Sources
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    Publikationsdatum: 2016-06-07
    Beschreibung: Nine groups of cells were studied. The first group was the control. The basic design was cadmium in the positive plate, and no negative treatment. The plate loading level was the IUE. The separator was pellon. The test regime for the remaining cells was a 90 minute cycle with 40% depth of discharge and a temperature of 20 C. The charge rate was 9.6 amps to a voltage limit. The discharge rate was 9.6 amps.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
    Materialart: The 1981 GSFC Battery Workshop; p 435-442
    Format: text
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