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  • American Institute of Physics (AIP)  (29)
  • American Physical Society  (21)
  • 1995-1999  (45)
  • 1980-1984  (5)
  • 1955-1959
  • 1920-1924
  • 1995  (45)
  • 1981  (5)
  • 11
    Electronic Resource
    Electronic Resource
    Ion-beam doping of GaAs with low-energy (100 eV) C+ using combined ion-beam and molecular-beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 146-152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV–30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C+) irradiation during MBE growth of GaAs was carried out at substrate temperatures Tg between 500 and 590 °C. C+-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. CAs acceptor-related emissions such as "g,'' [g-g], and [g-g]β are observed and their spectra are significantly changed with increasing C+ beam current density Ic. PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for Tg as low as 500 °C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C+ with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359361
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  • 12
    Electronic Resource
    Electronic Resource
    Anomalous ring-shaped distribution of oxygen precipitates in a Czochralski-grown silicon crystal (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4395-4400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The distribution of interstitial oxygen and oxygen precipitates as a function of the anneal time was studied using a low-temperature infrared absorption spectroscopy. We found that the density of the precipitation nuclei formed by an anneal at 800 °C is lower in the ring area than in the other areas of the wafer. The appearance of the ring area after precipitation annealing strongly depends on the preanneal temperature. A model explaining the formation of the ring-shaped distribution of oxygen precipitates after two-step anneal is proposed. In this model, the anomalous ring-shaped distribution is explained by assuming the existence of nuclei which have been already nucleated in the ring area at an elevated temperature during crystal growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359845
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  • 13
    Electronic Resource
    Electronic Resource
    Si/SiO2 interface states and neutral oxide traps induced by surface microroughness (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1569-1575 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-surface microroughness was formed by cleaning cycles of an NH4OH-H2O2-H2O solution. Not only the roughness of the silicon surface, but also the roughness of the thermally oxidized surface and that of the surface after the removal of the thermal oxide (corresponding to the Si/SiO2 interface roughness) were observed by means of atomic-force microscopy. By using metal-oxide-semiconductor structured samples, investigations were conducted of the electrical properties induced by surface microroughness, such as the oxide-trapped charges, Si/SiO2 interface states, neutral oxide-trap centers, and oxide-breakdown characteristics. As a result, it was clarified that the neutral oxide traps, as well as the Si/SiO2-interface states, apparently increase in spite of only a small change in roughness. It was also verified, however, that the oxide-trapped charges and the oxide breakdown do not change over the scale of roughness change in the present experiments, if contaminants were carefully eliminated from the Si surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358909
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  • 14
    Electronic Resource
    Electronic Resource
    Relation between lattice strain and anomalous oxygen precipitation in a Czochralski-grown silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 528-532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spatial fluctuations of lattice strain in an as-grown Czochralski-grown silicon wafer, in which a ring-shaped region of densely distributed oxidation-induced stacking faults appears after oxidation thermal treatment, are measured by double-crystal reflection topography with synchrotron radiation. The measured lattice strain is isolated into local variations in lattice dilation and inclination angle from an average plane. The variation profile of the lattice spacing shows a small valley in the ring-shaped region, while showing a peak just outside the ring-shaped region. The relation between the lattice strain and anomalous oxygen precipitation is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359036
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  • 15
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Generation phenomena of localized interface states induced by irradiation and post-irradiation annealing at the Si/SiO2' '' [J. Appl. Phys. 77, 2223 (1995)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2224-2224 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The accuracy of our measurements of the interface state [J. Appl. Phys. 73, 4388 (1993)] is reassessed. The oxide thickness is found to be better than 1%, using techniques not only by high-frequency C-V and quasistatic C-V but also by ellipsometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358809
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  • 16
    Electronic Resource
    Electronic Resource
    Photoluminescence study of Sr+ ion-implanted GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4828-4830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence experiments were carried out for Sr+ ion-implanted GaAs substrates as a function of Sr concentration and excitation intensity. It was found that the Sr impurity produces four emissions denoted by (Sr°, X), "G1'', "G2'', and "H'' in the near band emission region in GaAs grown by molecular beam epitaxy. "G1'' emission presents a red shift with increasing Sr concentration, while "G2'' does not shift. In a Sr+ ion-implanted impure GaAs substrate grown by the liquid-encapsulated Czochralski method, all four of the above emissions were missing. Instead there appeared two other emissions, SM1 and SM2, which are considered to be related to two deep acceptor levels of Sr in GaAs. All results indicate that the Sr impurity produces both shallow and deep energy levels in GaAs and a small amount of the residual impurity will quench the emissions related to shallow energy levels. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359408
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  • 17
    Electronic Resource
    Electronic Resource
    Properties of Czochralski-grown RAIO3 (R: Dy, Ho, and Er) single crystals for magnetic refrigeration (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 432-434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization of RAlO3 (R: Dy, Ho, and Er) single crystals along the c axis have been measured by the superconducting quantum interference device magnetometer. The single crystals are nominally pure and large sized, grown by the Czochralski method. Paramagnetic properties depend on the rare-earth elements. According to the magnetic entropy change, ErAlO3 single crystals are promising materials for the magnetic refrigerants using the Carnot cycle in the temperature range below 20 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359349
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  • 18
    Electronic Resource
    Electronic Resource
    Monochromator for circularly polarized synchrotron radiation in the energy range of 5–250 eV : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1537-1539 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new spherical grating monochromator with translational and rotational assembly including a normal incidence mount (SGM-TRAIN) is under construction at BL 5A of the UVSOR Facility, IMS, and its design concept is reported. The following points have been taken into account in the design: (1) Energy range of 5–250 eV, (2) use both of undulator and bending magnet radiation, (3) linear and circular polarizations, (4) spectral purity, (5) resolution, and (6) length of beamline. It should be stressed that the SGM-TRAIN is useful for experiments where circularly polarized synchrotron radiation is used. Moreover, the SGM-TRAIN has the advantage that the small emittance of storage ring and the large space for a long beamline are not necessary. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146512
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  • 19
    Electronic Resource
    Electronic Resource
    Extended x-ray absorption fine structure analysis of the difference in local structure of tantalum oxide capacitor films produced by various annealing methods (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2209-2211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extended x-ray absorption fine structure (EXAFS) above the Ta L3 edge on tantalum oxide capacitor films has been measured. Tantalum oxide films were prepared by low-pressure chemical vapor deposition (CVD) using a Ta(OC2H5)5 and O2 gas mixture. Four kinds of tantalum oxide films were studied: as-deposited (amorphous), N2 annealed (crystalline), dry O2 annealed (crystalline), and O2-plasma annealed (amorphous). From EXAFS analysis, differences in the local structures of tantalum oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of tantalum oxide capacitors correspond to the differences in the local structures around Ta. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113169
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  • 20
    Electronic Resource
    Electronic Resource
    Photoluminescence of ytterbium-doped porous silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2687-2689 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Yb3+-related photoluminescence is observed at room temperature from Yb-doped porous silicon layers prepared by the electro-chemical method developed by our group for Er doping of porous silicon layers. After rapid thermal annealing in a pure argon atmosphere at high temperatures (above ∼ 900 °C), samples show a sharp photoluminescence band at around 1.0 μm which is assigned to the intrashell 4f-4f transitions 2F5/2 → 2F7/2 of Yb3+. The enlarged energy bandgap of silicon as a result of anodization makes possible the excitation of Yb3+ 4f-electrons with the recombination energy of photocarriers generated in the host porous silicon layers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114293
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