ISSN:
1432-0630
Schlagwort(e):
79.20
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract Reflection high energy electron diffraction has been used to investigate the amorphous to polycrystalline structure transition in silicon induced by laser pulse. The power density of the ruby laser pulse, in the free generation mode, has been maintained below the threshold to induce surface damage. Depth analysis has been carried out in 〈100〉 silicon crystal using the channeling effect technique.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00883088
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