Publication Date:
2019-06-27
Description:
Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.
Keywords:
ELECTRONIC EQUIPMENT
Type:
NASA-CR-112182
Format:
application/pdf
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