ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract High temperature plastic bending was used to introduce, into indium antimonide single crystals, an excess of dislocations having either In-atoms at the edge of their extra half-planes (“In-dislocations”), or having Sb-atoms there (“Sb-dislocations”). The densities of these two kinds of dislocations were estimated by etch pit techniques. Hall coefficient and electrical conductivity measurements, made on bent samples, indicated that both In- and Sb-dislocations act as acceptor centres in n-type material, and that In-dislocations act as acceptor centres in p-type material. The results are discussed in relation to the theories of Read [22] and Broudy [4].
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00549721
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