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  • Springer  (63)
  • American Institute of Physics (AIP)  (13)
  • 1995-1999  (75)
  • 1960-1964  (1)
  • 1935-1939
  • 1920-1924
  • 1999  (75)
  • 1964  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Structural study of fucoidan from Cladosiphon okamuranus tokida (1999)
    Springer
    Glycoconjugate journal 16 (1999), S. 19-26 
    Details
    ISSN: 1573-4986
    Keywords: fucoidan ; sulfated fucan ; seaweed
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract A structural study was carried out on a fucoidan isolated from the brown seaweed Cladosiphon okamuranus. The polysaccharide contained fucose, glucuronic acid and sulfate in a molar ratio of about 6.1 : 1.0 : 2.9. The results of Smith degradation showed that this polysaccharide has a linear backbone of 1→3-linked α-fucopyranose with a half sulfate substitution at the 4-positions, and a portion of the fucose residues was O-acetylated. The data obtained from partial acid hydrolysis, a methylation analysis and NMR spectra indicated that the α-glucuronic acid residue is linked to the 2-positions of the fucose residues, which were not substituted by a sulfate group. These results indicated that the average structure of this fucoidan is as follows: -[(→3Fuc-4(±OSO3-)α1−)5→3[GlcAα1→2]Fucα1−]n−. (Half of each fucose residue was sulfated. One O-acetyl ester was present in every 6 fucose residues.)
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006945618657
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2278-2280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of stress on solid-phase crystallization of amorphous silicon (a-Si) were studied by laser Raman spectroscopy. Compressive stress was introduced in a-Si with a Si3N4 cap. The speed of crystallization decreased with the increase of the stress while it increased again with an additional cap of SiO2 on a Si3N4 cap. A SiO2 cap introduced tensile stress in an a-Si film and relaxed compressive stress by a Si3N4 cap. The reason why crystallization of a-Si is suppressed is that the stress is elastic and that it does not relax with crystallization. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371042
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  • 3
    Electronic Resource
    Electronic Resource
    Field emission from phosphorus-doped polycrystalline diamond films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4635-4642 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission characteristics have been investigated for P-doped polycrystalline diamond films. It is demonstrated that the turn-on voltage of the electron emission decreases with increasing temperature for the P-doped diamond film, while no variation in the turn-on voltage occurs for the undoped diamond film. The temperature-dependent field emission characteristics are found to be inherent to the P-doped diamond film. A behavior of the field emission characteristics can be well explained by means of the thermionic field emission model combined with the temperature dependence of the ionized donor concentration. This means that an increase of the ionized donor concentration with increasing temperature may lead to a reduction in the tunnel barrier width at the interface between the diamond and the cathode, resulting in an enhancement of the internal emission current. It is suggested that the internal electron emission is important to the field emission characteristics of the P-doped diamond films. A variation in the field emission characteristics of P-doped diamond films with various cathode metals and with various P-doping concentrations can be consistently understood on the basis of the internal electron emission model. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371414
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  • 4
    Electronic Resource
    Electronic Resource
    Fowler–Nordheim current injection and write/erase characteristics of metal–oxide–nitride–oxide–Si structure grown with helicon-wave excited plasma processing (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 551-557 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal–oxide nitride–oxide–Si (MONOS) structure was fabricated using the oxidation-nitridation series with helicon-wave O2–Ar and N2–Ar plasmas, respectively. The detrimental effect of Ar ion etching was minimized during the fabrication process by controlling the plasma–sheath width. The top oxide was very thin (∼1–2 nm) as compared with nitride (∼12–13 nm) and bottom oxide (∼7–8 nm). Fowler–Nordheim tunneling electron injection was performed in this MONOS diode for both dc and pulsed stress voltages with the electrical polarity being changed. For the positive stress voltage, the shift of the threshold voltage Vth was negative and larger for the smaller stress voltage. It was higher for the pulsed stress than for the dc one. On the other hand, Vth shift is positive and smaller for the pulsed stress than for the dc one for the negative stress bias. These findings can almost be explained by the avalanche breakdown model together with the effect of the total amount of the injected carries. Terman analysis indicated that the interface state density did not increase after both positive and negative stresses, which was probably due to film structure and the presence of a small amount of Si oxynitride (or Si–N–O bonds) at the insulator/Si interface. Write/erase characteristics were also briefly discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369488
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  • 5
    Electronic Resource
    Electronic Resource
    Construction and performance of a figure-8 undulator (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4153-4160 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The figure-8 undulator is a novel insertion device adopted as a light source at the soft x-ray photochemistry beamline of the Super Photon ring-8GeV. It was designed to produce linearly polarized soft x rays between 100 and 5000 eV with low on-axis power density. Magnetic fields of the constructed device were measured with compensation for the planar Hall effect using two different methods. After magnetic-field corrections, it was found that the first-harmonic intensity and the on-axis power density calculated using the measured fields were almost the same as ideal ones. After installation in the storage ring, a power-distribution pattern was observed by a fluorescent screen and it was found that the shape corresponded to expectation. The quantity of fluctuation of the photon-beam axis was estimated by measuring spectra at various observation angles and it was found to be small compared to the photon-beam size. In addition, it was also found that the measured spectrum at the gap of 77 mm agreed well with the calculated one. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150044
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of low-energy nitrogen molecular-ion impingement during the epitaxial growth of GaAs on the photoluminescence spectra (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2675-2677 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-energy (∼100 eV) nitrogen molecular ions (N2+) were impinged during molecular beam epitaxial growth of GaAs at the substrate temperature of 550 °C. In the low-temperature (2 K) photoluminescence (PL) spectra, extremely sharp N-related emissions (Xi, i=1, 2, and 5) were observed in as-grown condition. These emissions were roughly two orders of magnitude stronger than those formed by the impingement of nitrogen atomic ions (N+). The results indicate that nitrogen (N) atoms are in situ substituted at As sites without inducing large structural damages and become quite efficient radiative recombination centers as isoelectronic impurities in GaAs. Further, to study the substitutional condition of N isoelectronic impurity, N isotope (15N) doped GaAs was grown by 15N2+ ion impingement. When 15N is doped, PL peak energy of X5 shifted towards higher energy side by 1.8 meV. The value is fairly close to the expected one of 1.9 meV when 15N replaces 14N. Together from energy separation between X2 emission (∼60 meV), origin of X5 was ascribed to the local vibrational mode of X2 emission. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123933
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  • 7
    Electronic Resource
    Electronic Resource
    Improvement of far-field pattern in nitride laser diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2960-2962 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have clearly demonstrated a single spot in a far-field pattern of nitride-based laser diodes with a thick n-AlGaN layer/low-temperature-deposited buffer layer/sapphire. This AlGaN-based structure has realized a crack-free 1-μm-thick n-type Al0.06Ga0.94N cladding layer, leading to suppression of optical leakage from the waveguide region to the underlying layer and improvement of optical confinement. The threshold current of the laser diode is about 230 mA, which is comparable to or better than that of our laser diodes with the conventional GaN-based structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125201
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  • 8
    Electronic Resource
    Electronic Resource
    Self-aligned current confinement structure using AlAs/InP tunnel junction in GaInAsP/InP semiconductor lasers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1512-1514 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a current confinement structure which can be self-formed by thermal annealing of a electrode metal with a self-aligning process. The migrated metal selectively destroys an AlAs/InP tunnel junction to form a high resistance isolation layer. The hole current can be injected through a preserved tunnel junction window. We confirmed its lateral confinement effect from the near-field pattern of fabricated GaInAsP/InP stripe lasers. The proposed current confinement structure is very simple and useful for the lateral injection in semiconductor optical devices including long-wavelength vertical-cavity surface-emitting lasers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124739
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  • 9
    Electronic Resource
    Electronic Resource
    Surface-induced fragmentation of higher fullerenes and endohedral metallofullerenes (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 9681-9687 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report the first results of surface collisions of pure hollow fullerenes (C60, C70 and C78) and endohedral metallofullerenes (Y@C82, Ca@C82 and Ca@C84), isolated by liquid chromatography, against solid (silicon and gold) surfaces and self-assembled monolayer (SAM) films. The experiments have been performed by a reflectron type time-of-flight mass spectrometer modified for measuring surface-induced dissociation (SID) spectra. No surface-induced fragment is observed for the surface collisions with the solid surfaces and the alkanethiolate SAM film. In contrast, sequential C2-loss fragments have been observed for the surface collisions of hollow fullerenes and Ca@C84 with the fluorinated SAM film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.478932
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  • 10
    Electronic Resource
    Electronic Resource
    Mechanism of time-dependent oxide breakdown in thin thermally grown SiO2 films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7671-7681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the thermally grown silicon dioxide (SiO2) films, thermochemical-breakdown and hole-induced-breakdown models are theoretically formulated to explain the external electric-field dependence of time-dependent dielectric breakdown (TDDB) phenomenon. Long-term TDDB test results proved to support the thermochemical-breakdown model. The time-dependent oxide breakdown mechanism is further studied on the basis of quantum physical chemistry. The structural transformations of a-SiO2 up to breakdown are simulated by a semiempirical molecular orbital calculation method (PM3 method) using Si5O16H12 clusters. The structural transformations can be classified into: (a) amorphous-like SiO2 (a-SiO2), (b) hole-trapped SiO2 (hole trap), and (c) electrically broken down SiO2 (breakdown) structures. The atom configuration shows a shortened length between the nearest oxygen atoms due to hole trapping. This leads to time-dependent oxide breakdown, and the breakdown structure consists of a pair of oxygen-excess (Si–O–O–Si) and oxygen-vacancy (Si–Si) defects. The heat of formation and frontier orbital energies of structural transformations account well for the physical aspects of the TDDB phenomenon. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370570
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