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  • American Institute of Physics (AIP)  (25)
  • 2015-2019
  • 2000-2004  (25)
  • 1960-1964
  • 1935-1939
  • 1920-1924
  • 2002  (8)
  • 2001  (17)
  • 1962
  • 1
    Electronic Resource
    Electronic Resource
    X-ray phase-contrast imaging with submicron resolution by using extremely asymmetric Bragg diffractions (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 132-134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have obtained x-ray phase-contrast images with high spatial resolution by using extremely asymmetric Si 111 Bragg diffractions near the critical angle of the total reflection. The x-ray image could be magnified to 294 times in both vertical and horizontal directions. By using this x-ray microscopy system, we have observed clear phase-contrast images of a 0.7-μm-wide gold-line pattern. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337621
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  • 2
    Electronic Resource
    Electronic Resource
    Extraction of trap states in laser-crystallized polycrystalline-silicon thin-film transistors and analysis of degradation by self-heating (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3855-3858 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trap states at the oxide-silicon interface and grain boundary in laser-crystallized polycrystalline-silicon thin-film transistors were extracted. The oxide-silicon interface traps and grain boundary traps can be extracted using the low-frequency capacitance–voltage characteristic and current–voltage characteristic, respectively. The traps above and below the midgap can be extracted using n-type and p-type transistors, respectively. The oxide-silicon interface traps consist of deep states and therefore seem to be caused by dangling bonds. The grain boundary traps consist of tail states and therefore seem to be caused by distortion of silicon-silicon bonds. Moreover, degradation by self-heating was analyzed. The oxide-silicon interface traps increase after the degradation. This means that silicon-hydrogen bonds are dissolved, and dangling bonds are generated. The grain boundary traps also increase a little. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446238
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  • 3
    Electronic Resource
    Electronic Resource
    Relaxor behavior in manganites (invited) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6857-6862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impurity (Cr3+)-doping effect on the stability of charge and orbital ordering has been systematically investigated for Nd1/2Ca1/2Mn1−yCryO3 crystals by measurements of magnetotransport and x-ray diffraction. The random field in terms of eg orbital deficiencies on the Cr sites drives the charge and orbital correlations to dynamical and short range, which is most relevant to the high-resistive state exhibiting colossal magnetoresistance. In the Cr-doped manganite, we can observe the coexistence of ferromagnetic–metallic and charge–orbital ordered phases, their spatial distributions, diffuse x-ray scattering, magnetic-field annealing, and the aging effect on the magnetic and electric properties, etc. These phenomena are reminiscent of those of relaxor ferroelectrics composed of ferroelectric clusters embedded in a paraelectric matrix. We propose that the mixed-valent manganite can be viewed as a "magneto- and electrorelaxor." © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362644
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  • 4
    Electronic Resource
    Electronic Resource
    Model and probe measurements of inductively coupled CF4 discharges (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1780-1787 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A global model for electronegative plasma, in which the negative ion distribution is assumed to be a parabolic profile in the axial direction with a flat central region and a similar edge profile in the radial direction in the electronegative region, is applied to study the power and pressure dependences of plasma parameters in low-pressure CF4 discharges. The electron density increases approximately linearly with the power. The electron temperature also increases with the power due to the decrease in neutral number density with increase in power, resulting in the increase in plasma potential. The density of CF3+ is a weak function of the power, while the densities of CF2+, CF+, and F+, which are strongly correlated to the densities of the respective radicals, depend on the power. On the other hand, the decrease in electron temperature with the pressure significantly results in a decrease in the degree of dissociation. The electron density also decreases gradually with the pressure except for the case of pressure lower than 5 mTorr. The densities of CF2+, CF+, and F+ decrease gradually with the pressure at pressures higher than 5 mTorr, while the density of CF3+ increases gradually with the pressure. The electron energy probability function (EEPF) is measured with a Langmuir probe in an inductively coupled rf (13.56 MHz) CF4 discharge over a pressure range from 2 to 30 mTorr, while keeping the power injected into the plasma at about 70 W. The measured EEPFs are approximately Maxwellian at any pressure, although there is a slight deviation from a Maxwellian distribution at pressures higher than 10 mTorr. The results estimated from the measured EEPF are compared to the model and show reasonably good agreement. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491023
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  • 5
    Electronic Resource
    Electronic Resource
    Dependence of polycrystalline silicon thin-film transistor characteristics on the grain-boundary location (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 596-600 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dependence of transistor characteristics on the grain-boundary location in polycrystalline silicon (poly-Si) thin-film transistors (TFTs) has been analyzed using device simulation. In the linear region, degradation is similar wherever the grain boundary is located. On the other hand, in the saturation region, degradation is less when the grain boundary is in the pinch-off region near the drain edge and degradation is similar when the grain boundary is elsewhere. Although this dependence is similar to the dependence on the trap location in single-crystal silicon transistors, the mechanism is different. This dependence in poly-Si TFTs is because the coulombic potential barrier caused by the grain boundary is lowered in the high electric field in the pinch-off region. This is a kind of Poole–Frenkel effect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1329141
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  • 6
    Electronic Resource
    Electronic Resource
    Theoretical analysis of the diffusive ion in biased plasma enhanced diamond chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2559-2564 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of the bias pretreatment for the enhanced nucleation of the diamond nuclei in the chemical vapor deposition of diamond is theoretically investigated. We obtain the kinetic energy of ions impinging on the surface of the substrate as a function of bias voltage. The experimentally obtained optimum bias voltage of −100 V for the enhanced nucleation of diamond nuclei corresponds to the C ion energy of ∼5 eV at the surface of the substrate. The reduction of the ion energy is caused by the scattering in the ion sheath region of the plasma. The ion sheath width and the ion energy on the surface of the substrate are given as functions of the gas pressure and the bias voltage. The results are compared with the experimental results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389524
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  • 7
    Electronic Resource
    Electronic Resource
    Global model of inductively coupled Ar plasmas using two-temperature approximation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4240-4246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron energy distribution function (EEDF) is measured with a Langmuir probe in an inductively coupled rf (13.56 MHz) Ar discharge in the pressure range from 5 to 70 mTorr, by changing the power injected into the plasma up to 100 W. The EEDFs measured at a pressure of 5 mTorr formed a bi-Maxwellian structure, which is not prominent due to high electron density, in the energy region lower than the lowest excitation threshold energy. The EEDF structure in the energy region higher than the threshold has a significant depletion of high energy electrons. The EEDF measured at a pressure higher than 10 mTorr can be approximated using a two-temperature distribution, which consists of the higher temperature in a low-energy region below the lowest excitation threshold and the lower temperature in a high-energy region. A global model using the two-temperature distribution is proposed and compared with the experimental results. The model consists of the rate equations for neutrals and charged particles and an energy-balance equation for electrons together with the balance equation for high-energy electrons. Pressure dependences of the electron density and temperatures predicted in this global model agree well with the experimental results except in the pressure range lower than 10 mTorr. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354652
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  • 8
    Electronic Resource
    Electronic Resource
    In situ observation of Si(001) surface in He atmosphere at high temperatures near the bulk melting temperature (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2138-2145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface melting of Si(001) surface has been investigated by x-ray reflectivity up to the bulk melting temperature: Tm;b. An in situ system was designed for measurements of x-ray reflectivity at high temperatures under an atmosphere of He-gas flow. It has been shown that the surface density changes at T=Tm;s*〈Tm;b−110 K. This change was observed at T=Tm;s* both on cooling and heating (a reversible phenomenon). The density of the near-surface at Tm;b〉T〉Tm;s*, which is larger than that of the bulk solid, is 2.5(1)×103 kg/m3 which is almost the same as that of the bulk liquid, though a macroscopic melting does not occur. This reversible phenomenon indicates the surface melting at T=Tm;s*. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339856
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  • 9
    Electronic Resource
    Electronic Resource
    Fast ion loss measurement by infrared television in reduced ripple experiment with ferritic inserts on JFT-2M (abstract) : Papers from the thirteenth topical conference on high temperature plasma diagnostics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 919-919 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In the medium size tokamak, JFT-2M, the ferritic steel boards (FBs) were inserted to reduce the toroidal field ripple which causes the fast ion losses. To evaluate the effect of FB insertion, two-dimensional (2D) infrared television (IRTV) system with high resolutions in time and space was developed, which is quite suitable to measure the first wall temperature increment caused by the ripple ion losses in a medium size tokamak. We adopt an IR thermal imager (Mitsubishi IR-M300) that provides a field time of 1/60 s. The detectable temperature range is 0–500 °C with resolution of 0.2 °C. The PtSi (26×20 μm) detector being sensitive to 3–5 μm IR radiation is composed of a 256×256 array. The optical system to view the first wall consists of an IR lens (f:25 mm, F:2.0), a reflecting mirror, and a sapphire vacuum window, in which distance from the camera position to the target wall is shortened to ∼3.5 m. Thus, we obtained a high spatial resolution of ∼3 mm. By using this system, the local hot spot due to the ripple trapped losses of fast ions was observed during neutral beam injection (36 kV, 500 kW) heating. The peak temperature increment ΔTs reached to ∼75 °C before FB insertion. After FB insertion, the ΔTs were reduced clearly. In the most optimized case, the temperature increment became negligibly small. These IRTV data make clear the effectiveness of FBs for reduction of fast ion losses.© 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323491
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  • 10
    Electronic Resource
    Electronic Resource
    Tetragonal distortion of c domains in fatigued Pb(Zr,Ti)O3 thin films determined by x-ray diffraction measurements with highly brilliant synchrotron radiation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2365-2367 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed x-ray diffraction measurements by using highly brilliant synchrotron radiation on only a small region of 250-nm-thick Pb(Zr0.33Ti0.67)O3 polycrystalline films with gold top electrodes after applying various numbers of switching cycles of the electric field. The films were deposited on Pt/SiO2/Si substrates by low-temperature metalorganic chemical vapor deposition. The plane spacing and integrated intensity of 004 and 400 diffraction patterns were plotted against the number of switching cycles. We found a good correlation between the increase in 004-plane spacing and the decrease in remanent polarization. This correlation indicates that tetragonal distortion of c domains is closely related to the fatigue phenomenon. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465132
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