ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2020-2022
  • 2005-2009
  • 1990-1994  (244)
  • 1970-1974
  • 1940-1944  (3)
  • 1993  (154)
  • 1990  (90)
  • 1941  (3)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4555-4559 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel luminescence technique named photothermal luminescence has been developed. For the photothermal luminescence spectroscopy, the emission signal is caused by electronic transitions via the absorption of photons, followed by thermal excitation via electron-phonon interactions, and is monitored as a function of the excitation photon energy, in which the excitation photon energy is less than that of the emission signal. This new technique has been applied to the study of electronic transitions in GaAs/AlxGa1−xAs quantum wells. In addition to the observation of the n=1 electron-heavy-hole 1s and 2s exciton recombinations, a previously unreported fine structure in the n=1 electron-heavy-hole 1s exciton spectrum has also been observed. By measuring the temperature dependence of the spectra on different quantum wells, we suggest that the fine structure is due to the formation of the standing waves of acoustic vibrations in GaAs/AlxGa1−xAs quantum wells. We emphasize that due to the underlying mechanism of the technique, the photothermal luminescence provides a powerful tool to investigate the processes of electron-phonon interactions.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 465-467 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured impact ionization coefficients, α and β, in 150 A(ring) pseudomorphically strained materials for the first time. The measurements were made on specially designed lateral p-i-n diodes. α and β in lattice-matched GaAs layers are found to be lower than those in strained In0.2Ga0.8As and higher than those in strained In0.15Ga0.63Al0.22As. β is larger than α in all the samples. The results are discussed in terms of the changes in the band structure due to biaxial strain.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3795-3797 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyzed the Raman spectra and x-ray diffraction of two GaAs/Al0.3Ga0.7As superlattices grown by molecular-beam epitaxy on a 4 ° misoriented (001) GaAs substrate and an exactly (001)-oriented GaAs substrate respectively. From the frequency shifts of the longitudinal-optical- (LO) confined phonons in the Raman spectra and the variation in linewidths of both the LO-confined phonons and the satellite peaks in x-ray diffraction, we found that the 4 ° misorientation of the GaAs substrate from (001) toward [110] direction improves the interface quality of the superlattices.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4286-4289 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage measurements were performed on the InAs/AlSb/GaSb interband tunneling diode at various frequencies. Theoretical analyses using a self-consistent Schrödinger–Poisson solver were found in agreement with the experimental results under the forward-bias condition. The quantization energy of each subband of the electron in the InAs accumulation region is used to predict the tunneling current cutoff voltage in agreement with that of the current-voltage measurements. Therefore, the cutoff of the interband tunneling process is mainly caused by the crossover of the electron subband energy in the InAs conduction band with respect to the valence band of the GaSb electrode due to the increased external bias voltage.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7389-7394 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the double-crystal x-ray rocking curve technique to determine lattice constant, strain relaxation, thickness, and critical thickness of a thin InxGa1−xAs layer embedded in GaAs. In this work we have measured and analyzed x-ray data over a wide scan angle (∼2.0°). This allows the simultaneous determination of buried layer thickness and strain. The measurement results were analyzed by the dynamical diffraction theory. The critical thickness for an InGaAs layer embedded in GaAs obtained from x-ray data is shown to be larger than that predicted by the force balance model. The strain tensors as a function of layer thickness are also analyzed for the buried InxGa1−xAs of different x values.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5881-5883 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical, electrical, and magnetic properties of magnetic Nd15Fe77B8 and nonmagnetic Nd5Fe62B33 films have been investigated. It has been found that within the visible (wavelengths 4400–6400 A(ring)) the films are transparent with thickness less than 800 A(ring) for magnetic films and 1500 A(ring) for nonmagnetic films. This is due to the difference of the magnetic permeability μ between films. The oscillatory behavior with thickness of the films is observed in the film samples. The anomalous behaviors near the Curie temperature for both bulk- and film-type samples are similar to that of the type-III ferromagnets. The temperature at which the electrical resistance of the film-type samples increases abruptly varies from 620 K for 1000 A(ring) to 650 K for 2000 A(ring).
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the growth and device characteristics of In0.53+x Ga0.47−x As/ In0.52 Al0.48 As (0≤x≤0.27) pseudomorphic modulation-doped field-effect transistors on InP substrates. In situ reflection high energy electron diffraction oscillation studies were carried out to study the growth of pseudomorphic InGaAs on GaAs and InP substrates. The data from these measurements and a theoretical formalism based on energy minimization suggest that in the pseudomorphic growth regime increased strain causes growth modes to change from two-dimensional layer-by-layer to a three-dimensional island mode. The resulting interface roughness is used as a parameter to explain the observed trends in channel mobility and device performance. It is also shown that altered growth techniques, such as migration enhanced epitaxy, in which the surface reconstruction may be changed, can restore the layer-by-layer growth mode for large amounts of strain in the pseudomorphic layer.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4832-4834 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The variations of the grain-boundary precipitates, the electrical resistivity, and the magnetization of a Ni-8 at. % Sn alloy have been investigated as functions of annealing temperature and annealing time. For samples annealed at 773 K, the averaged growth rate of the size of the grain-boundary precipitates is roughly 0.42 μm/h for the first 24 h; the electrical resistivity at T=10 K and the magnetization at T=10 K and H=5 kG vary monotonically with respect to the annealing time for the first 2 weeks, changing from 22.5 to 7 μΩ cm for the electrical resistivity and from 27 to 33 emu/g for the magnetization. A large tail section in the magnetization versus temperature curve was also observed in the aged samples. All these electrical and magnetic variations in the Ni-8 at. % Sn samples annealed at 773 K varied monotonically with respect to the growth of the grain-boundary precipitates.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A computed tomographic (CT) technique has been developed to diagnose laser-irradiated spherical targets using x-ray emissions. The three-dimensional (3-D) x-ray distribution was reconstructed by using an algebraic reconstruction technique (ART) from x-ray pinhole camera images obtained along different sight directions. 3-D distributions of electron temperature and density were measured by use of an absorption filter technique. Time-resolved 3-D x-ray emission images from an imploding hollow shell target were reconstructed with less than 100 ps temporal resolution by using x-ray multiframing cameras.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 3420-3435 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Time resolved, subpicosecond resolution measurements of photoinitiated NO2 unimolecular decomposition rates are reported for expansion cooled and room temperature samples. The molecules are excited by 375–402 nm tunable subpicosecond pulses having bandwidths ≥20 cm−1 to levels which are known to be thorough admixtures of the 2B2 electronically excited state and the 2A1 ground electronic state. Subsequent decomposition is probed by a 226 nm subpicosecond pulse that excites laser-induced fluorescence (LIF) in the NO product. When increasing the amount of excitation over the dissociation threshold, an uneven, "step-like'' increase of the decomposition rate vs energy is observed for expansion cooled samples. The steps are spaced by ∼100 cm−1 and can be assigned ad hoc to bending at the transition state. Relying on experimental estimates for the near threshold density of states, we point out that simple transition state theory predictions give rates that are consistent with these measured values. The rates are sufficiently rapid to question the assumption of rapid intramolecular vibrational redistribution, which is implicit in transition state theories. In contrast to expansion cooled samples, room temperature samples exhibit a smooth variation of the reaction rate vs photon energy. By comparing rates for rotationally cold and room temperature NO2, the ON–O bond is estimated to be ∼40% longer in the transition state than in the parent molecule.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...