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  • American Institute of Physics (AIP)  (13)
  • 1995-1999  (13)
  • 1960-1964
  • 1935-1939
  • 1920-1924
  • 1998  (13)
  • 1962
  • 1936
  • 1
    Electronic Resource
    Electronic Resource
    The activation of Mg in GaN by annealing with minority-carrier injection (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation of a Mg acceptor in GaN, by means of annealing under minority-carrier injection, is observed at a temperature above 300 °C. This activation is carried on with hydrogen left in the layer. The p-type GaN layers activated by this treatment are repassivated by additional annealing in an open-circuit configuration even in inert gas, and then reactivated by annealing under minority-carrier injection. Hydrogen remaining in the layer seems to play a major role in this reversible phenomenon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120936
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  • 2
    Electronic Resource
    Electronic Resource
    Size dependence of the quantum yield of photoluminescence from silicon nanocolloids (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1345-1348 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared several nanometer-sized silicon colloids in the range from 3.7 to 9.8 nm with a constant weight density 1 mg/ml. The blue-green emission is found to be independent of size contrast to its intensity. The absolute quantum yield as a function of size is determined. From the proposed model that combines surface as well as volume effects, the emission is proved to be from a surface trapped site. The energy transfer efficiency from volume to the site is almost 100% for the 3.7 nm particle. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366837
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  • 3
    Electronic Resource
    Electronic Resource
    Pulsed Fowler–Nordheim current stress resistance of Si oxynitride grown with helicon-wave excited nitrogen–argon plasma (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7685-7692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed Fowler–Nordheim (FN) current stress resistance was investigated for the Si oxynitride grown in the helicon-wave excited N2–Ar plasma. The shift of the gate threshold voltage Vth increased with an increase in the pulse frequency for both polarities of the applied stress voltage. At low frequencies (〈1 kHz), the Vth shift was larger for the negative gate-voltage stress than for the positive one. However, as the frequency exceeds about 1 kHz, the Vth shift become much higher for the positive stress than for the negative one. The Vth shift was smaller as the pulse duty ratio was larger. These findings could be explained with the surface–plasmon and avalanche breakdown models combined with the effect of the total amount of the injected carriers to the oxynitride from the Si substrate or the gate electrode. The effect of Ar ion etching during plasma processing on the FN stress resistance was also investigated. The Ar ion etching effect was found to be substantially reduced as the plasma-sheath width was large and Si oxynitride samples were grown under this condition. The mean time to failure was highly improved by the Si oxynitride samples grown under the condition of reduced Ar ion etching effect. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367890
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  • 4
    Electronic Resource
    Electronic Resource
    Particle acceleration by laser fields in a dielectric disk-loaded waveguide (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5636-5643 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method is proposed for accelerating relativistic charged particle beams in a vacuum by a laser. The laser propagates in an overmoded waveguide interrupted periodically by thin dielectric disks spaced many wavelengths apart. The particle beam travels along the waveguide axis, passing through irises in the disks. The disks correct for slippage of the particle phase relative to the laser wave. This concept exploits the inverse of familiar radiation processes (transition radiation, diffraction radiation). Several practical accelerator issues are incorporated in a systems analysis. Acceleration gradients in the GeV/m range are projected using lasers with ∼100 GW power. This represents more than an order of magnitude stronger coupling of the laser energy compared to other laser acceleration schemes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367416
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  • 5
    Electronic Resource
    Electronic Resource
    Enhanced Yb3+-related 0.98 μm emission in porous silicon and its time decay characteristics (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1005-1008 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A strong enhancement in the intensity of the ∼0.98 μm emission (2F5/2→2F7/2) of Yb3+-ions in porous silicon is obtained by adding a pre-annealing process to host porous silicon in O2 or H2 prior to Yb3+-ion incorporation and subsequent post-dope annealing. The luminescence intensity shows a small temperature quenching, decreasing from 20 K to 300 K by a factor of ∼10. The time decay measurements show that there are two major Yb3+-related luminescence centers in Yb-doped porous silicon. One is a fast decaying center with a decay time of ∼30 μs at 20 K which decreases rapidly with increasing temperature. The other is a slowly decaying center with an almost temperature independent decay time of ∼400 μs. The latter is responsible for the small temperature quenching of Yb3+-related 0.98 μm emission. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366789
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of hydrogen plasma treatment on the 1.54 μm luminescence of erbium-doped porous silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1036-1040 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Well resolved, sharp photoluminescence (PL) peaks of Er3+ (4f11) ions at ∼1.54 μm are obtained from Er-doped porous silicon (PS:Er) on which a hydrogen plasma treatment is carried out after electrochemical incorporation of Er3+ions into porous silicon. The full width at half maximum (FWHM) of the 1.538 μm main peak at 20 K is less than 1 nm, which is much smaller than that obtained from PS:Er samples annealed in a H2 or O2 flow (FWHM 7–10 nm), and is comparable to that of Er-doped crystalline silicon. The thermal quenching of the PL intensity is, however, relatively small, the PL intensity decreasing only by a factor of 10 from 20 to 300 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368100
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  • 7
    Electronic Resource
    Electronic Resource
    The role of zinc pre-exposure in low-defect ZnSe growth on As-stabilized GaAs (001) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 939-941 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc coverage and the structures of Zn-exposed As-stabilized GaAs(001)-(2×4) and -c(4×4) surfaces have been studied using x-ray photoelectron spectroscopy and scanning tunneling microscopy in order to clarify the role of the Zn pre-exposure process in ZnSe growth on GaAs(001). Since Zn atoms stick on the GaAs-(2×4) surface even though their interaction is very weak, Zn may act as a balancer to form a neutral ZnSe/GaAs interface. Zn can also remove excess As atoms and make a "pure" (2×4) structure that is the only possible starting surface for low-defect ZnSe heteroexpitaxy on a GaAs(001) surface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122045
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependence of field emission characteristics of phosphorus-doped polycrystalline diamond films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 268-270 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependence of the field emission characteristics is investigated for the phosphorus(P)-doped polycrystalline diamond film in comparison with that of the boron(B)-doped one. The threshold voltage decreases with increasing temperature for the P-doped diamond film, while no variation in the threshold voltage occurs for the B-doped diamond film. It is considered that an increase of the ionized donor concentration with increasing temperature leads to a reduction in the tunnel barrier width at the interface between the diamond and the cathode, resulting in an enhancement of the emission current. Field emission characteristics in the higher voltage region are featured by the space charge limited current. The activation energy estimated from the Arrhenius plot of the emission current suggests the upward band bending at the diamond surface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121776
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  • 9
    Electronic Resource
    Electronic Resource
    Fabrication and physical properties of c-axis oriented thin films of layered perovskite La2−2xSr1+2xMn2O7 (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3004-3006 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown c-axis oriented films of a layered perovskite La2−2xSr1+2xMn2O7 (x=0.4) by pulsed laser deposition under the limited growth condition; above 900 °C and below 100 mTorr for substrate temperature and oxygen pressure (PO2), respectively. Otherwise, epitaxial but composition-unidentified films were deposited. The films show a resistive transition around 100 K in coincidence with the magnetic transition. The value of resistivity at low temperature is larger than that of a single crystal by about two orders of magnitude, perhaps due to the canted spin ordering. The films show gigantic magnetoresistance accompanied with hysteresis. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122658
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  • 10
    Electronic Resource
    Electronic Resource
    The effect of surface segregation on the light-emission intensity of Si/SiGe/Si heterostructures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 232-234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correlation between the light-emission intensity from SiGe mixed crystals and Ge surface segregation during molecular beam epitaxy has been investigated. Atomic-hydrogen-assisted molecular beam epitaxy was used to vary the surface-segregation length of Ge. Results show that the photoluminescence (PL) intensity was very strong in the region where the surface-segregation length was less than 7 nm. However, when the surface-segregation length exceeded 7 nm, the PL intensity decreased sharply. A one-to-one correspondence between the PL intensity and the Ge segregation length was obtained. This is attributed to the dependence of the surface segregation on the degree of randomness in the SiGe alloy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121765
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