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  • American Institute of Physics (AIP)  (6)
  • 2010-2014
  • 2000-2004  (6)
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  • 2000  (6)
  • 1932
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a new Brillouin spectroscopic technique evidences the existence of internal stresses in white plasma assisted chemical vapor deposited diamond and allows a first assessment concerning their magnitude. The evaluation of the internal stresses is based on the pressure coefficients related to the longitudinal and transverse elastic constants. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2698-2700 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the early stages of annealing in boron implanted silicon. In a grazing incidence diffuse scattering investigation of implantation-induced defects, we have observed narrow diffuse rods of intensity along 〈111〉 directions. These diffuse streaks arise from stacking faults formed during annealing in the 1000 °C range. From the width of the diffuse streak the average size of the stacking fault is 71 nm in diameter. These intensity rods are distinct from the point defect or point defect cluster scattering in the tails of the Bragg peak (Huang scattering). From the q dependence of the scattered intensity in the Huang scattering region we find clear evidence for defect clusters with an average effective size of 4 nm, remarkably independent of the annealing temperature. These observations are discussed in the context of the enhanced diffusion of implanted boron over its bulk value referred to as transient enhanced diffusion. © 2000 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 139-141 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin oxide films with perovskite or related structures and with transition metal doping show a reproducible switching in the leakage current with a memory effect. Positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns. The ratio between these two states is typically about 20 but can exceed six orders of magnitude. Once a low-impedance state has been achieved it persists without a power connection for months, demonstrating the feasibility of nonvolatile memory elements. Even multiple levels can be addressed to store two bits in such a simple capacitor-like structure. © 2000 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2894-2896 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the structural and compositional uniformity of a set of ZnSnP2/GaAs superlattices grown by gas-source molecular-beam epitaxy. Cross-sectional scanning tunneling microscopy reveals an asymmetry in interface abruptness, with the ZnSnP2 on GaAs interfaces apparently much smoother than the GaAs on ZnSnP2 interfaces. The increased roughness of the GaAs on ZnSnP2 interface occurs simultaneously with the apparent surface segregation of Sn. High-resolution x-ray diffraction and photoluminescence spectroscopy suggest that the ZnSnP2 regions consist of a mixture of ZnSnP2 and ZnSnAs2. This is further confirmed by cross-sectional scanning tunneling microscopy and spectroscopy, which reveal the presence of nanometer-scale ZnSnP2 and ZnSnAs2-rich regions. Interestingly, these lateral compositional variations are not correlated with observed growth front undulations. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 8855-8865 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The vibrational spectrum of deuterated phosphaethyne (DCP) is analyzed in terms of quantum-mechanical variational calculations, classical mechanics (periodic orbits), and an effective Hamiltonian model. The quantum mechanical and classical calculations are performed with a new, spectroscopically accurate potential energy surface. The spectrum is governed by a 2 : 1 DC stretch : CP stretch anharmonic resonance, which already exists for the fundamentals. The bending degree of freedom is to a large extent decoupled. It is shown that several bifurcations in the classical phase space profoundly influence the quantum spectrum. For example, a new progression, which does not exist at very low excitation energies, comes into existence at intermediate energies. In contrast to HCP, the pure bending states gradually evolve along the isomerization path with increasing bending quantum number. © 2000 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 8446-8457 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new potential energy surface for the electronic ground state of HCP (phosphaethyne) is presented. The ab initio calculations are based on the internally contracted multireference configuration interaction method using atomic basis functions of quintuple-zeta quality. The ca. 1 000 calculated energy points are fitted to a complex analytical function, which is employed in the subsequent quantum-mechanical variational calculations for total angular momentum J=0–2. The majority of the first 850 vibrational states is assigned in terms of three quantum numbers. The calculated energies are compared to various sets of experimental data—obtained from high-resolution Fourier-transform infrared spectra, dispersed fluorescence spectra, and stimulated-emission pumping spectra. The energy regime, which is covered, extends up to about 25 000 cm−1 above the ground vibrational state. The agreement is excellent; every experimentally assigned level is uniquely related to a calculated vibrational state. Some experimental misassignments at the lower ends of the high-energy polyads are corrected. The progression of "isomerization" (i.e., large-amplitude bending) states, which was experimentally observed by Ishikawa et al. [J. Chem. Phys. 106, 2980 (1997)], is quantitatively confirmed. © 2000 American Institute of Physics.
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