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  • Elsevier  (125)
  • American Society of Hematology  (31)
  • Cell Press  (16)
  • American Institute of Physics (AIP)  (10)
  • 2020-2022
  • 2005-2009  (112)
  • 1990-1994  (70)
  • 1930-1934
  • 2006  (112)
  • 1991  (70)
  • 1930
Collection
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Years
  • 2020-2022
  • 2005-2009  (112)
  • 1990-1994  (70)
  • 1930-1934
Year
  • 1
    Electronic Resource
    Electronic Resource
    Evaluation of pulsed radiation effects in buried oxides by fast C-V measurements (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4784-4789 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fast C-V measurement techniques are utilized to simultaneously probe both upper and lower interfaces of silicon-on-insulator/separation by implantation of oxygen buried oxide capacitors following exposure to pulsed ionizing irradiation. In addition to the relatively stable radiation-induced positive charge, reverse annealing is observed from both Si-SiO2 interfaces over the 200 μs to 300 s post exposure interval; this behavior is consistent with electron detrapping within the oxide. The dependence of electron detrapping on dc annealing bias is attributed to field-enhanced emission effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349071
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  • 2
    Electronic Resource
    Electronic Resource
    Electron spin resonance of defects in silicon-on-insulator structures formed by oxygen implantation: Influence of γ irradiation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 175-181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-on-insulator structures obtained by single-step implantation of oxygen followed by high temperature annealing were studied by K-band electron spin resonance (ESR) at 4.3–31 K. The spectrum has a strong line at g=2.0059±0.0001 with a spin density of 7.1×1013 cm−2. Various features indicate that it is very similar to that characteristic of dangling Si-bonds (DBs) in a-Si but different from the ESR signal of the Pb center associated with single-crystal-Si/SiO2 interfaces. Irradiation by γ rays to a dose of 1 Mrad(Si) resulted in a 2.5-fold increase in DB density and in the appearance of a new, anisotropic signal of spin density 1.1×1012 cm−2. The latter signal is similar to that originating from a shallow donor in Si, of axial symmetry and preferentially aligned along [001]. It is tentatively assigned to an oxygen-related double donor in Si regions close to the Si/SiO2 interface and/or in the buried oxide. These donors are not generated by irradiation; rather, their ionization state is altered through band bending tuning resulting from irradiation-induced charges in the oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348934
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  • 3
    Electronic Resource
    Electronic Resource
    Gallium phosphide junctions with low leakage for energy conversion and near ultraviolet detectors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6500-6505 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is a need for semiconductor junctions with very low leakage for energy conversion from low level radioactive or radio-luminescent sources, and low noise blue-green photodiodes. We report the properties of two types of GaP junctions; a Schottky barrier of Pd on liquid phase epitaxy grown n-type GaP and a p+ over n junction grown by metal-organic chemical vapor deposition. Both types of junctions show very low leakage currents and good efficiency for power conversion from low level beta particles, x rays, and blue-green light.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348858
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  • 4
    Electronic Resource
    Electronic Resource
    The relaxation spectrum and diffusion in concentrated systems of spherical particles (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 6124-6135 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The viscoelastic properties of a concentrated monodisperse latex of polyvinylidene fluoride coated by a monolayer of the surfactant C12E6 has been examined as a function of volume fraction. This system shows solidlike behavior in the linear viscoelastic region. A model is developed to describe number density fluctuations in the sample in terms of the colloid pair interaction energy. This is used to determine the relaxation spectrum and is then compared with experimental data. Excellent agreement is found between the model and the measured stress relaxation response. This model has been compared to published data on polystyrene latex and has also shown excellent agreement. A tracer diffusion coefficient is calculated to illustrate that the dynamic processes controlling relaxation are slow.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461581
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  • 5
    Electronic Resource
    Electronic Resource
    In situ growth of PbSrYCaCuO films by laser ablation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 762-764 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful preparation of 1212 PbSrYCaCuO thin films by laser ablation. The films are grown in situ on (100)LaAlO3 at the relatively low substrate temperature of 610 °C. The starting composition of the target is not that of the superconductor produced. Its composition was choosen to yield the 2213 PbSrYCaCuO phase, but the structural analysis shows a predominantly 1212 film with a small impurity phase. The films are highly oriented and show superconducting transitions with onsets at 90 K and zero resistance by 75 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104540
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  • 6
    Electronic Resource
    Electronic Resource
    Indium-Hg vacancy interactions in Hg1−xCdxTe measured by perturbed angular correlation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 938-940 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of mercury vacancies with dopant indium atoms in Hg0.79Cd0.21Te was studied using the perturbed γγ angular correlation (PAC) technique. Two dominant PAC signals, characterized by quadrupole interaction strengths νQ1=83 MHz and νQ2= 91 MHz and asymmetry parameters η1=η2=0.08, were observed and attributed to one or more In-VHg complexes. The complexes appeared after annealing doped samples at T≥350 °C in vacuum and quenching. The fraction of In atoms associated with vacancies was increased further by annealing at 80 °C for (approximately-greater-than)10 h. The In-vacancy complexes vanished on annealing in a Hg-saturated atmosphere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106307
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  • 7
    Electronic Resource
    Electronic Resource
    Novel phased array optical scanning device implemented using GaAs/AlGaAs technology (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 899-901 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel type of optical beam scanning device based on the same principle as a phased array radar has been made and demonstrated. This phased array optical scanning device consisted of a uniformly illuminated array of ten closely spaced, single mode GaAs/AlGaAs electrooptic waveguides, each of which was individually addressed to give more than 2π radians of optical phase control. This gave a line of ten point sources of light on a 3 μm pitch at the output face of the array. By independently phase shifting these light sources the output wavefront was controlled to scan a 2° wide beam through 20° in the far field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105270
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  • 8
    Electronic Resource
    Electronic Resource
    Long switching delay mechanisms for optically triggered GaAs thyristors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 834-836 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long switching delays following optical triggering of GaAs thyristors are shown to result from near cancellation of carrier lifetime and current regeneration effects. Numerical simulations and analytical models account for the long delays, which are measured to be more than an order of magnitude larger than any lifetime or transit time in the device. Since the thyristor is in a low current state during the delay, this switching phenomena represents a form of dynamic information storage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105251
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of (Pb0.75Cu0.25)Sr2(Y1−yCay)Cu2O7 thin films by laser ablation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2597-2599 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we investigate the effects of varying the values of x and y in (Pb1−xCux)Sr2(Y1−yCay)Cu2O7 films deposited by laser ablation. The films are grown in situ on (100) LaAlO3 at the relatively low substrate temperature of 620 °C. The films are highly oriented with the c-axis perpendicular to the substrate and exhibit a surface morphology which is unique to the oxide superconductors. By substituting Ca for Y it is possible to systematically vary the superconducting transition temperature from 10 K to a maximum of 86 K. On the other hand, variations in the value of x seem to suggest that the film's copper concentration in the (PbCu) plane can only exist within the narrow range of approximately x=0.2–0.3 and any extra copper added to the target ends up in an impurity phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105914
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  • 10
    Electronic Resource
    Electronic Resource
    Experiments utilizing ion cyclotron range of frequencies heating on the TFTR tokamak (1991)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 3 (1991), S. 2270-2276 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A variety of experiments have been performed on the TFTR tokamak [Wilson et al., Plasma Physics and Controlled Nuclear Fusion Research 1988 (IAEA, Vienna, 1989), Vol. 1, p. 691] utilizing ion cyclotron range of frequencies (ICRF) heating. Of special interest has been the insight into plasma performance gained by utilizing a different heating scheme other than the usual neutral beam injection (NBI). Utilizing ICRF heating allows control over the power deposition profile independent of the plasma fueling profile. In addition, by varying the minority concentration the power split between ion and electron heating can be varied. Confinement has been examined in high recycling gas fueled discharges, low recycling supershot plasmas, and peaked density pellet fueled discharges. Global confinement is found not to be affected by the method or localization of plasma heating, but the calculated local diffusivities vary with the power deposition profile to yield similar global values. In addition, sawtooth stabilization observed with ICRF heating has been investigated and found to occur in qualitative agreement with theory. ICRF sawtooth stabilized discharges exhibit peaked temperature and density profiles and have a safety factor q that appears to fall well below unity on axis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.859646
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