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  • Articles  (3)
  • American Institute of Physics (AIP)  (3)
  • Cambridge University Press
  • 2010-2014  (3)
  • 1965-1969
  • Journal of Applied Physics  (3)
  • 805
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  • Articles  (3)
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  • 1
    Publication Date: 2014-11-07
    Description: The strategy of suppressing grain growth by dispersing nanoscale particles that pin the grain boundaries is demonstrated in a nanocrystalline thermoelectric compound. Yttria nanoparticles that were incorporated by mechanical alloying enabled nanocrystalline (i.e., d 
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 2
    Publication Date: 2014-10-17
    Description: Recovery and grain growth behavior is investigated systematically for the nanocrystalline thermoelectric compound bismuth telluride, synthesized by mechanical alloying. During annealing treatments at elevated temperatures, structural evolution is tracked using x-ray diffraction, electron microscopy and calorimetry. Below a homologous temperature of about 0.6 T m , grain growth occurs slowly with an activation energy of 89 kJ/mol. However above this temperature grain growth becomes more rampant with an activation energy of 242 kJ/mol. The transition is attributed to a shift from a relaxation or recovery process that includes some reordering of the grain boundary structure, to a more conventional diffusionally-limited grain growth process. By extrapolating the measured grain growth and microstrain evolution kinetics, a thermal budget map is constructed, permitting recommendations for improving the thermoelectric properties of nanocrystalline materials processed via a powder route.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 3
    Publication Date: 2014-08-14
    Description: Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10 18 and 3 × 10 20  cm −3 . Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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