ALBERT

Description: We present a numerical study on phononic band gaps and resonances occurring at the edge of a semi-infinite two-dimensional (2D) phononic crystal plate. The edge supports localized edge waves coupling to evanescent phononic plate modes that decay exponentially into the semi-infinite phononic crystal plate. The band-gap range and the number of edge-wave eigenmodes can be tailored by tuning the distance between the edge and the semi-infinite 2D phononic lattice. As a result, a phononic band gap for simultaneous edge waves and plate waves is created, and phononic cavities beside the edge can be built to support high-frequency edge resonances. We design an L3 edge cavity and analyze its resonance characteristics. Based on the band gap, high quality factor and strong confinement of resonant edge modes are achieved. The results enable enhanced control over acoustic energy flow in phononic crystal plates, which can be used in designing micro and nanoscale resonant devices and coupling of edge resonances to other types of phononic or photonic crystal cavities.

Description: Using light-emitting diodes (LEDs) for visible light communication has become an alternative choice of radio source due to channel crowding of the radio-frequency (RF) signal. The modulation bandwidth of LEDs is usually limited by the spontaneous carrier lifetime in multiple quantum wells. Here, sub-GHz modulation of GaN-based LED employing photonic crystal (PhC) nanostructure is demonstrated. The guided photonic modes of the LEDs are modulated by the RF signal. Both carrier lifetime of lower- and higher-order modes are studied in time-resolved photoluminescence (TRPL) at room temperature. The f - 3 dB - J curve of the PhC LED exhibits a higher bandwidth than the typical LED structure. At 11.41 kA/cm 2 , the optical −3-dB bandwidth ( f - 3 dB ) up to 234 MHz of the PhC LED (PhCLED) is achieved. Our studies on TRPL at different wavelengths and frequency response at different injection current densities conclude that the higher operation speed is attributed to faster radiative carrier recombination of extracted guided modes from the PhC nanostructure.

Description: We theoretically investigate the optomechanical (OM) coupling of submicron cavities formed in one-dimensional phoxonic–plasmonic slabs. The phoxonic–plasmonic slabs are structured by depositing periodic Ag strips onto the top surfaces of dielectric GaAs slabs to produce dual band gaps for both electromagnetic and acoustic waves, thereby inducing the coupling of surface plasmons with photons for tailoring the OM coupling. We quantify the OM coupling by calculating the temporal modulation of the optical resonance wavelength with the acoustic phonon-induced photoelastic (PE) and moving-boundary (MB) effects. We also consider the appearance of a uniform Ag layer on the bottom surface of the slabs to modulate the photonic–plasmonic coupling. The results show that the PE and MB effects can be constructive or destructive in the overall OM coupling, and their magnitudes depend not only on the quality factors of the resonant modes but also on the mode area, mode overlap, and individual symmetries of the photonic–phononic mode pairs. Lowering the mode area could be effective for enhancing the OM coupling of subwavelength photons and phonons. This study introduces possible engineering applications to achieve enhanced interaction between photons and phonons in nanoscale OM devices.

Description: Magnetostriction (MS)-caused strain in single-phase three-legged cores with different core cutting forms, which suffer from induced magnetic loss and noise, was studied. It is found that adopting each different core form types induces magnetostriction ε variation in a transformer core operating with a high-frequency AC signal. The results are compared with finite element analysis simulations. It is also indicated that magnetostriction ε variations are significant in the rolling direction and along limbs and yokes. In this paper, it is proposed that core corner sides and T-joint parts without cutting structure, the core exhibits lower core loss and lower heat dissipation due to the fact that the magnetic flux that passes through corner sides shows lower magnetostriction variation. The magnetic properties resulting from magnetostriction variation in core loss and heat dissipation phenomena are significantly different from other core forms because of stronger contributions from magnetostatic forces. The main contribution for reducing core loss and noise, making them much less in corner numbers and cutting-fabricated forms, can be expected to come from lower magnetic flux and magnetostriction variation.

Description: This study investigated the effect of magnetostriction-induced core magnetomechanical vibrations and noise on the magnetic properties of power transformers. The magnetostriction of grain-oriented Si steels was found to be extremely sensitive to compressive stress applied along the rolling direction and to tensile stress applied along the transverse direction. The compressive stress increased the variation in the magnitude of magnetostriction, which is correlated with core vibration and noise. A 2D model of the power transformer was used to simulate the noise and vibration variables through a finite element analysis.

Description: EuMn 2 O 5 multiferroic nanorods, with diameters radial × (〈 L C 〉) lengths of 25(6) nm × 47(15) nm and 51(16) nm × 70(26) nm, were fabricated by the hydrothermal method. Ferrimagnetic ordering below 50 K (T*) is observed in the ⟨ L C ⟩ = 70 nm sample, which exhibited ferromagnetic (FM) behavior below T* in a field cooling process. No similar behavior was found in the ⟨ L C ⟩ = 47 nm sample. These observations reveal that only the ⟨ L C ⟩ = 70 nm sample has a meta-FM state, and this sample exhibits the stronger coupling between the Mn ions. Raman spectra of both sets of samples were obtained in 0, 610, 1000, 1600, and 2000 G magnetic fields. The red-shift of the A g (681 cm −1 ) mode of the both samples increased with the strength of the field above 1000 G, indicating the existence of spin-phonon interaction. The smaller sampled exhibited a larger red-shift, suggesting that the size importantly affects the of EuMn 2 O 5 nanorods.

Description: Sub-monolayer iron atoms were deposited at room temperature on Ge (111)-c(2 × 8) substrates with and without Ag buffer layers. The behavior of Fe islands growth was investigated by using scanning tunneling microscope (STM) after different annealing temperatures. STM images show that iron atoms will cause defects and holes on substrates at room temperature. As the annealing temperature rises, iron atoms pull out germanium to form various kinds of alloyed islands. However, the silver layer can protect the Ag/Ge(111)-(√3×√3) reconstruction from forming defects. The phase diagram shows that ring, dot, and triangular defects were only found on Ge (111)-c(2 × 8) substrates. The kinds of islands found in Fe/Ge system are similar to Fe/Ag/Ge system. It indicates that Ge atoms were pulled out to form islands at high annealing temperatures whether there was a Ag layer or not. But a few differences in big pyramidal or strip islands show that the silver layer affects the development of islands by changing the surface symmetry and diffusion coefficient. The structure characters of various islands are also discussed.

Description: Although the diffusion control and dopant activation of Ge p-type junctions are straightforward when using B + implantation, the use of the heavier BF 2 + ions or even BF + is still favored in terms of shallow junction formation and throughput—because implants can be done at higher energies, which can give higher beam currents and beam stability—and thus the understanding of the effect of F co-doping becomes important. In this work, we have investigated diffusion and end-of-range (EOR) defect formation for B + , BF + , and BF 2 + implants in crystalline and pre-amorphized Ge, employing rapid thermal annealing at 600 °C and 800 °C for 10 s. It is demonstrated that the diffusion of B is strongly influenced by the temperature, the presence of F, and the depth of amorphous/crystalline interface. The B and F diffusion profiles suggest the formation of B–F complexes and enhanced diffusion by interaction with point defects. In addition, the strong chemical effect of F is found only for B in Ge, while such an effect is vanishingly small for samples implanted with F alone, or co-implanted with P and F, as evidenced by the high residual F concentration in the B-doped samples after annealing. After 600 °C annealing for 10 s, interstitial-induced compressive strain was still observed in the EOR region for the sample implanted with BF + , as measured by X-ray diffraction. Further analysis by cross-sectional transmission electron microscopy showed that the {311} interstitial clusters are the majority type of EOR defects. The impact of these {311} defects on the electrical performance of Ge p + /n junctions formed by BF + implantation was evaluated.

Description: The environmental aging effect of doped graphene is investigated as a function of the organic doping species, humidity, and the number of graphene layers adjacent to the dopant by studies of the Raman spectroscopy, x-ray and ultraviolet photoelectron spectroscopy, scanning electron microscopy, infrared spectroscopy, and electrical transport measurements. It is found that higher humidity and structural defects induce faster degradation in doped graphene. Detailed analysis of the spectroscopic data suggest that the physical origin of the aging effect is associated with the continuing reaction of H 2 O molecules with the hygroscopic organic dopants, which leads to formation of excess chemical bonds, reduction in the doped graphene carrier density, and proliferation of damages from the graphene grain boundaries. These environmental aging effects are further shown to be significantly mitigated by added graphene layers.

Description: Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c -oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.