Publication Date:
2015-12-09
Description:
A two-dimensional (2D) material, the holey 2D C 2 N ( h 2D-C 2 N) crystal, has recently been synthesized. Here, we investigate the strain effects on the properties of this material by first-principles calculations. We show that the material is quite soft with a small stiffness constant and can sustain large strains ≥ 12 % . It remains a direct gap semiconductor under strain, and the bandgap size can be tuned in a wide range as large as 1 eV. Interestingly, for biaxial strain, a band crossing effect occurs at the valence band maximum close to a 8% strain, leading to a dramatic increase of the hole effective mass. Strong optical absorption can be achieved by strain tuning with absorption coefficient ∼ 10 6 cm −1 covering a wide spectrum. Our findings suggest the great potential of strain-engineered h 2D-C 2 N in electronic and optoelectronic device applications.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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