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  • Articles  (3)
  • American Institute of Physics (AIP)  (3)
  • American Geophysical Union
  • American Meteorological Society (AMS)
  • Berlin: Deutsches Institut für Wirtschaftsforschung (DIW)
  • EDP Sciences
  • Paleontological Society
  • Applied Physics Letters  (3)
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  • Articles  (3)
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  • American Institute of Physics (AIP)  (3)
  • American Geophysical Union
  • American Meteorological Society (AMS)
  • Berlin: Deutsches Institut für Wirtschaftsforschung (DIW)
  • EDP Sciences
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  • 1
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    Thin film based plasmon nanorulers (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-07-07
    Description: In this work, isolated metal nanoparticles are supported on a dielectric thin film that is placed on a conducting plane. The optical scattering characteristics of these metal nanoparticles are directly correlated with the localized surface plasmon states of the nanoparticle—image particle dimer, formed in the conducting plane below. Quantification of plasmon resonance shifts can be directly correlated with the application of the plasmon nanoruler equation. This simple geometry shows that direct optical techniques can be used to resolve thickness variations in dielectrics of only a few nanometers.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Charge trapping of Ge-nanocrystals embedded in TaZrOx dielectric films (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-01-16
    Description: Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO x by thermal annealing of co-sputtered Ge-TaZrO x layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
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    Thermomechanical response of thermoelectrics (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-12-03
    Description: We have theoretically investigated the product of elastic modulus and linear coefficient of thermal expansion for 20 thermoelectrics. The product is inversely proportional to equilibrium volume, which is consistent with the Debye-Grüneisen model. Oxides exhibit larger products, while the products of Te-containing thermoelectrics are considerably smaller. This is likely due to strong bonding in these oxides, which makes them prone to thermal stress, thermal shock, and thermal fatigue. As this product is rarely available in literature and the equilibrium volume is easily measurable, this work provides a quick estimation for the thermomechanical response of thermoelectric phases.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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