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Snell’s Law for Spin Waves (2016)

Stigloher, J. ; Decker, M. ; Körner, H. S. ; [et al.]

American Physical Society

In: Physical Review Letters. 2016; 117(3): 037204. Published 2016 Jul 12. doi: 10.1103/physrevlett.117.037204.

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Publication Date: 2016-07-12

Print ISSN: 0031-9007

Electronic ISSN: 1079-7114

Topics: Physics

Published by American Physical Society

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Snell’s Law for Spin Waves (2016)

J. Stigloher, M. Decker, H. S. Körner, K. Tanabe, T. Moriyama, T. Taniguchi, H. Hata, M. Madami, G. Gubbiotti, K. Kobayashi, T. Ono, and C. H. Back

American Physical Society (APS)

In: Physical Review Letters

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Publication Date: 2016-07-13

Description: Author(s): J. Stigloher, M. Decker, H. S. Körner, K. Tanabe, T. Moriyama, T. Taniguchi, H. Hata, M. Madami, G. Gubbiotti, K. Kobayashi, T. Ono, and C. H. Back Researchers have verified experimentally that the reflection and refraction of spin waves at an interface follow a Snell’s-like law. [Phys. Rev. Lett. 117, 037204] Published Tue Jul 12, 2016

Keywords: Condensed Matter: Electronic Properties, etc.

Print ISSN: 0031-9007

Electronic ISSN: 1079-7114

Topics: Physics

Published by American Physical Society (APS)

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Resistance given by tiling grain surface with micro surface structures in polycrystalline metal oxide (2016)

T. Moriyama, T. Yamasaki, T. Ohno, S. Kishida and K. Kinoshita

American Institute of Physics (AIP)

In: Journal of Applied Physics

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Publication Date: 2016-12-06

Description: Practical use of Resistive Random Access Memory (ReRAM) depends on thorough understanding of the resistive switching (RS) mechanism in transition metal oxides. Although most of ReRAM samples have polycrystalline structures, both experimental studies and theoretical calculations do not often consider the effects that grain boundaries have on the RS mechanism. This paper discusses what determines resistance values in a Pt/polycrystalline NiO/Pt ReRAM structures by using both experiments and first-principles calculations. Electrical measurements suggest that the RS is caused in the grain boundaries of NiO films. First-principles calculations indicate that slight displacements of atoms with a small energy change of 0.04 eV per atom on the surfaces exposed in the grain boundaries can drastically change conductivities. We propose the tiling model, in which grain surfaces are composed by insulating and conductive micro surface structures, and the surface resistances are determined by the tiling patterns.

Print ISSN: 0021-8979

Electronic ISSN: 1089-7550

Topics: Physics

Published by American Institute of Physics (AIP)

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Observation of asymmetry in domain wall velocity under transverse magnetic field (2016)

Kim, K.-J. ; Yoshimura, Y. ; Okuno, T. ; [et al.]

American Institute of Physics

In: APL Materials. 2016; 4(3): 032504. Published 2016 Mar 01. doi: 10.1063/1.4944897.

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Publication Date: 2016-03-01

Electronic ISSN: 2166-532X

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics

Published by American Institute of Physics

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Modulation of the magnetic domain size induced by an electric field (2016)

Ando, F. ; Kakizakai, H. ; Koyama, T. ; [et al.]

American Institute of Physics

In: Applied Physics Letters. 2016; 109(2): 022401. Published 2016 Jul 11. doi: 10.1063/1.4955265.

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Publication Date: 2016-07-11

Print ISSN: 0003-6951

Electronic ISSN: 1077-3118

Topics: Physics

Published by American Institute of Physics

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Resistance given by tiling grain surface with micro surface structures in polycrystalline metal oxide (2016)

Moriyama, T. ; Yamasaki, T. ; Ohno, T. ; [et al.]

American Institute of Physics

In: Journal of Applied Physics. 2016; 120(21): 215302. Published 2016 Dec 07. doi: 10.1063/1.4969045.

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Publication Date: 2016-12-07

Print ISSN: 0021-8979

Electronic ISSN: 1089-7550

Topics: Physics

Published by American Institute of Physics

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