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  • Artikel  (2)
  • Molecular Diversity Preservation International  (2)
  • American Physical Society
  • Institute of Physics
  • 2020-2022  (2)
  • 2005-2009
  • Materials. 2020; 13(3): 577. Published 2020 Jan 26. doi: 10.3390/ma13030577.  (1)
  • Materials. 2020; 14(1): 3. Published 2020 Dec 22. doi: 10.3390/ma14010003.  (1)
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  • Artikel  (2)
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  • Molecular Diversity Preservation International  (2)
  • American Physical Society
  • Institute of Physics
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  • 1
    Publikationsdatum: 2020-01-26
    Beschreibung: Wire Electrical Discharge Machining (WEDM) is a popular non-conventional machining technology widely used in high-added value sectors such as aerospace, biomedicine, and the automotive industry. Even though the technology is now ready to meet the requirements of the most complex components, certain fundamental aspects related to the discharge process and gap conditions are not yet fully explained and understood. Combining single discharge experiments with numerical simulation represents a good approach for obtaining a deeper insight into the fundamentals of the process. In this paper, a fundamental study of the WEDM through single discharge experiments and numerical simulation is presented. WEDM single discharge experiments are described with the aim of identifying the relation between crater dimensions, discharge gap, and part surface roughness. A thermal transient numerical model of the WEDM process is presented, and correlation with actual industrial material removal rates (MRR) is analyzed. Results from single discharge WEDM experiments show that crater volume is as much as 40% lower when discharging on a rough surface than when the discharge occurs on a flat surface. The proposed thermal numerical model can predict actual removal rates of industrial machines with great accuracy for roughing cuts, deviations with experimental values being below 10%. However, lager deviations have been observed for other WEDM conditions, namely trim cuts, thus confirming the need for future research in this direction.
    Digitale ISSN: 1996-1944
    Thema: Maschinenbau
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Publikationsdatum: 2020-12-22
    Beschreibung: Organic thin-film transistors (OTFTs) are miniaturized devices based upon the electronic responses of organic semiconductors. In comparison to their conventional inorganic counterparts, organic semiconductors are cheaper, can undergo reversible doping processes and may have electronic properties chiefly modulated by molecular engineering approaches. More recently, OTFTs have been designed as gas sensor devices, displaying remarkable performance for the detection of important target analytes, such as ammonia, nitrogen dioxide, hydrogen sulfide and volatile organic compounds (VOCs). The present manuscript provides a comprehensive review on the working principle of OTFTs for gas sensing, with concise descriptions of devices’ architectures and parameter extraction based upon a constant charge carrier mobility model. Then, it moves on with methods of device fabrication and physicochemical descriptions of the main organic semiconductors recently applied to gas sensors (i.e., since 2015 but emphasizing even more recent results). Finally, it describes the achievements of OTFTs in the detection of important gas pollutants alongside an outlook toward the future of this exciting technology.
    Digitale ISSN: 1996-1944
    Thema: Maschinenbau
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
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